ASTM F1262M-2014 Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits &40 Metric&41 《数字集成电路的瞬时辐射固定阈试验的标准指南(米制)》.pdf
《ASTM F1262M-2014 Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits &40 Metric&41 《数字集成电路的瞬时辐射固定阈试验的标准指南(米制)》.pdf》由会员分享,可在线阅读,更多相关《ASTM F1262M-2014 Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits &40 Metric&41 《数字集成电路的瞬时辐射固定阈试验的标准指南(米制)》.pdf(7页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: F1262M 95 (Reapproved 2008)F1262M 14Standard Guide forTransient Radiation Upset Threshold Testing of DigitalIntegrated Circuits (Metric)1This standard is issued under the fixed designation F1262M; the number immediately following the designation indicates the year oforiginal adoption or
2、, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide is to assist experimenters in measuring the transient radiation upse
3、t threshold of silicon digital integrated circuitsexposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.(matl.)/s.1.1.1 DiscussionThis document is intended to be a guide to determine upset threshold, and is not intended to be a stand-alonedocument.1.2 This standard does not purport to a
4、ddress all of the safety concerns, if any, associated with its use. It is the responsibilityof the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatorylimitations prior to use.2. Referenced Documents2.1 ASTM Standards:2E666 Practice
5、 for Calculating Absorbed Dose From Gamma or X RadiationE668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose inRadiation-Hardness Testing of Electronic DevicesF867MF1893 Guide or Ionizing Radiation Effects (Total Dose) Testing for Measurement of I
6、onizing Dose-Rate Survivabilityand Burnout of Semiconductor Devices Metric (Withdrawn 1998)2.2 Military Standards: 3Method 1019 in MIL-STD-883. Steady-State Total Dose Irradiation ProcedureMethod 1021 in MIL-STD-883. Dose Rate Threshold for Upset of Digital Microcircuits.3. Terminology3.1 Definition
7、s:3.1.1 combinational logicA digital logic system with the property that its output state at a given time is solely determined bythe logic signals at its inputs at the same time (except for small time delays caused by the propagation delay of internal logicelements).3.1.1.1 DiscussionCombinational c
8、ircuits contain no internal storage elements. Hence, the output signals are not a function of any signals thatoccurred at past times. Examples of combinational circuits include gates, adders, multiplexers and decoders.3.1.2 complex circuit response mechanismslatchup conditionFor medium scale integra
9、tion (MSI) and higher devices it isuseful to define three different categories of devices in terms of their internal design and radiation response mechanisms.Apersistent anomalous high current state in which a parasitic region (for example, a four layer p-n-p-n or n-p-n-p path) is turnedon by transi
10、ent ionizing radiation.1 This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space RadiationEffects.Current edition approved June 15, 2008June 1, 2014. Published July 2008 July 2014. Originally approved in 1
11、995. Last previous edition approved in 20022008 asF1262M 95(2002).(2008). DOI: 10.1520/F1262M-95R08.10.1520/F1262M-14.2 For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at serviceastm.org. For Annual Book of ASTM Standardsvolume information, refer to
12、 the standards Document Summary page on the ASTM website.3 Available from Standardization Documents Order Desk, Bldg. 4, Section D, 700 Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indicat
13、ion of what changes have been made to the previous version. Becauseit may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current versionof the standard as published by ASTM is to be cons
14、idered the official document.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States13.1.3 over-stressed deviceAdevice that has conducted more than the manufacturers specified maximum current, or dissipatedmore than the manufacturers specifie
15、d maximum power.3.1.3.1 DiscussionIn this case the DUT is considered to be overstressed even if it still meets all of the manufacturers specifications. Because of theoverstress, the device should be evaluated before using it in any high reliability application.3.1.4 primary photocurrent (Ipp)a trans
16、ient current flowing from the DUT due to radiation exposure.3.1.4.1 DiscussionThe passage of radiation through the depletion region of a semiconductor device creates electron-hole pairs. These electron-holepairs are then subsequently swept out of the device via the built in potential. This results i
17、n a transient current flowing from theDUT due to radiation exposure.3.1.5 sequential logicA digital logic system with the property that its output state at a given time depends on the sequenceand time relationship of logic signals that were previously applied to its inputs.3.1.5.1 DiscussionExamples
18、 of sequential logic circuits include flip-flops, shift registers, counters, and arithmetic logic units.3.1.6 state vectorA state vector which completely specifies the logic condition of all elements within a logic circuit.3.1.6.1 DiscussionFor combinational circuits, the state vector includes the l
19、ogic signals that are applied to all inputs: for sequential circuits, the statevector must also include the sequence and time relationship of all input signals. In this guide the output states will also beconsidered part of the state vector definition. For example, an elementary 4-input NAND gate ha
20、s 16 possible state vectors, 15 ofwhich result in the same output condition (“1” state).A4-bit counter has 16 possible output conditions, but many more state vectorsbecause of its dependence on the dynamic relationship of various input signals.3.1.7 upset responseThe electrical response of a circuit
21、 when it is exposed to a pulse of transient ionizing radiation.3.1.7.1 DiscussionTwoThree types of upset response can occur:(1) transient output error, for which the instantaneous output voltage of an operating digital circuit is greater than apredetermined value (for a low output condition) or less
22、 than a predetermined value (for a high output condition), and the circuitspontaneously recovers to its pre-irradiation condition after the radiation pulse subsides. The predetermined values mentionedabove are agreed to by all parties participating in the test and should be included in the test plan
23、.(2) stored logic state error, for which there is a change in the state of one or more internal logic elements that does not recoverspontaneously after the radiation pulse. Because the radiation changes the state vector, the circuit spontaneously recovers to adifferent logic state. This does not imp
24、ly the change will always be immediately observable on a circuit output. However, thecircuit can be restored to its original state vector by re-initializing it afterwards.(3) functional interrupt error, a circuit wide state in which the circuit ceases functioning as intended. A soft reset may restor
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