1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationPiezoelectric and dielectric devices for frequency control and selection GlossaryPart 4-4: Materials Materials for surface acoustic wave (SAW) devicesDD IEC/TS 61994-4-4:2010Nati
2、onal forewordThis Draft for Development is the UK implementation of IEC/TS 61994-4-4:2010.The UK participation in its preparation was entrusted to Technical CommitteeEPL/49, Piezoelectric devices for frequency control and selection.A list of organizations represented on this committee can be obtaine
3、d onrequest to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2010ISBN 978 0 580 68580 4ICS 01.040.31; 31.140Compliance with a British Standard cannot confer immunity fromlegal obligations.T
4、his Draft for Development was published under the authority of theStandards Policy and Strategy Committee on 31 July 2010.Amendments issued since publicationAmd. No. Date Text affectedDRAFT FOR DEVELOPMENTDD IEC/TS 61994-4-4:2010IEC/TS 61994-4-4Edition 2.0 2010-06TECHNICAL SPECIFICATIONPiezoelectric
5、 and dielectric devices for frequency control and selection Glossary Part 4-4: Materials Materials for surface acoustic wave (SAW) devices INTERNATIONAL ELECTROTECHNICAL COMMISSION MICS 01.040.31; 31.140 PRICE CODEISBN 978-2-88912-022-2 Registered trademark of the International Electrotechnical Comm
6、ission DD IEC/TS 61994-4-4:2010 2 TS 61994-4-4 IEC:2010(E) INTERNATIONAL ELECTROTECHNICAL COMMISSION _ PIEZOELECTRIC AND DIELECTRIC DEVICES FOR FREQUENCY CONTROL AND SELECTION GLOSSARY Part 4-4: Materials Materials for surface acoustic wave (SAW) devices FOREWORD 1) The International Electrotechnica
7、l Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this en
8、d and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Comm
9、ittee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in ac
10、cordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all
11、interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held res
12、ponsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any diverge
13、nce between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC mar
14、ks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual expert
15、s and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Pub
16、lication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Pub
17、lication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. The main task of IEC technical committees is to prepare International Standards. In exceptional circumstances, a technical committee may propose the publication of a technic
18、al specification when the required support cannot be obtained for the publication of an International Standard, despite repeated efforts, or the subject is still under technical development or where, for any other reason, there is the future but no immediate possibility of an agreement on an Interna
19、tional Standard. Technical specifications are subject to review within three years of publication to decide whether they can be transformed into International Standards. IEC 61994-4-4, which is a technical specification, has been prepared by IEC technical committee 49: Piezoelectric and dielectric d
20、evices for frequency control and selection. DD IEC/TS 61994-4-4:2010TS 61994-4-4 IEC:2010(E) 3 This second edition of IEC 61994-4-4 cancels and replaces the first edition published in 2005. This edition constitutes a technical revision. The main changes with respect to the previous edition are liste
21、d below: Terms and definitions are rearranged in accordance with the order of the alphabet. ”reduced LN” is appended to terms and definitions. ”reduced LT” is appended to terms and definitions. reduction process is appended to terms and definitions. The text of this technical specification is based
22、on the following documents: Enquiry draft Report on voting 49/890/DTS 49/901/RVC Full information on the voting for the approval of this technical specification can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directi
23、ves, Part 2. A list of all parts of IEC 61994 series, published under the general title Piezoelectric and dielectric devices for frequency control and selection Glossary can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the s
24、tability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be be transformed into an International standard, reconfirmed, withdrawn, replaced by a revised edition, or amended. A bilingual version of th
25、is publication may be issued at a later date. DD IEC/TS 61994-4-4:2010 4 TS 61994-4-4 IEC:2010(E) PIEZOELECTRIC AND DIELECTRIC DEVICES FOR FREQUENCY CONTROL AND SELECTION GLOSSARY Part 4-4: Materials Materials for surface acoustic wave (SAW) devices 1 Scope This part of IEC 61994 specifies the terms
26、 and definitions for single crystal wafers applied for surface acoustic wave (SAW) devices representing the state of the art, which are intended for use in the standards and documents of IEC technical committee 49. 2 Normative references The following referenced documents are indispensable for the a
27、pplication of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. ISO 4287, Geometrical Product Specifications (GPS) Surface texture: Profile method Terms, definitions and surfa
28、ce texture parameters 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 acceptable quality level AQL AQL is the maximum percent defective (or the maximum number of defects per hundred units) that, for purposes of sampling inspections, can be co
29、nsidered satisfactory as a process average IEC 60410:1973, 4.2 3.2 as-grown synthetic quartz crystal single-crystal quartz grown hydrothermally. “As-grown” refers to the state of processing and indicates a state prior to mechanical fabrication IEC 61994-4-1:2007, 3.4 3.3 back surface roughness defin
30、itions of Raare given in ISO 4287 IEC 62276:2005, 3.8 3.4 bevel slope or rounding of the wafer perimeter. This is also referred to as “edge profile”. The process of creating a bevel is called “bevelling” or “edge rounding”. The profile and its tolerances should be specified by the supplier DD IEC/TS
31、 61994-4-4:2010TS 61994-4-4 IEC:2010(E) 5 IEC 62276:2005, 3.13 3.5 chip region where material has been removed from the surface or edge of the wafer. The size of chip can be expressed by its maximum radial depth and peripheral chord length IEC 62276:2005, 3.16.4 3.6 congruent composition chemical co
32、mposition of single crystal in thermodynamic equilibrium with molten solution of the same composition during the growth process IEC 62276:2005, 3.4.2 3.7 contamination the first is defined as area and the second as particulate. The first is caused by surface contaminants that cannot be removed by cl
33、eaning or are stained after cleaning. Those may be foreign matter on the surface of, for example a localized area that is smudged, stained, discoloured, mottled, etc., or large areas exhibiting a hazy or cloudy appearance resulting from a film of foreign materials IEC 62276:2005, 3.16.1 3.8 crack fr
34、acture that extends the surface and may or may not penetrate the entire thickness of the wafer IEC 62276:2005, 3.16.2 3.9 curie temperature Tcphase transition temperature between ferroelectric and paraelectric phases measured by differential thermal analysis (DTA) or dielectric measurement IEC 62276
35、:2005, 3.3.1 3.10 description of orientation and SAW propagation indicating the surface orientation and the SAW propagation direction, separated by the symbol “-“. Specification of a 0 orientation is normally omitted. Typical examples for these expressions are shown in Table 1 Table 1 Description of
36、 orientation Material LN LT Quartz crystal LBO LGS Expression 128 oY-X Y-Z 64 oY-X X-112oY 36oY-X ST-X 45oX-Z yxlt/48, 5 /26, 6 IEC 62276:2005, 3.10 DD IEC/TS 61994-4-4:2010 6 TS 61994-4-4 IEC:2010(E) 3.11 diameter of wafer diameter of circular portion of wafer excluding the OF and SF regions IEC 62
37、276:2005, 3.14 3.12 dimple smooth surface depression larger than 3 mm in diameter IEC 62276:2005, 3.16.5 3.13 fixed quality area FQA central area of a wafer surface, defined by a nominal edge exclusion, X, over which the specified values of a parameter apply IEC 62276:2005, 3.7.1 3.14 focal plane de
38、viation FPD measured relative to the three point reference plane as defined in 3.30b). The value indicates the maximum distance between a point on the wafer surface (within the FQA) and the focal plane. If that point is above the reference, the FPD is positive. If that point is below the reference p
39、lane, the FPD is negative IEC 62276:2005, 3.7.10 3.15 lattice constant length of one unit cell along major crystallographic axis measured by X-ray using the Bond method IEC 62276:2005, 3.4.1 3.16 lanthanum gallium silicate LGS single crystals described by the chemical formula to La3Ga5SiO14,grown by
40、 Czochralski (crystal pulling from melt) or other growing methods IEC 62276:2005, 3.1.5 3.17 lithium niobate LN single crystals approximately described by chemical formula LiNbO3, grown by Czochralski (crystal pulling from melt) or other growing methods IEC 62276:2005, 3.1.2 3.18 lithium tantalate L
41、T single crystals approximately described by chemical formula LiTaO3,grown by Czochralski (crystal pulling from melt) or other growing methods IEC 62276:2005, 3.1.3 DD IEC/TS 61994-4-4:2010TS 61994-4-4 IEC:2010(E) 7 3.19 lithium tetraborate LBO single crystals described by the chemical formula to Li
42、2B4O7, grown by Czochralski (crystal pulling from melt), vertical Bridgman, or other growing methods IEC 62276:2005, 3.1.4 3.20 local thickness variation LTV determined by a measurement of a matrix of sites with defined edge dimensions (e.g. 5 mm 5 mm). Measurement is performed on a clamped wafer wi
43、th the reference plane as defined in 3.30a). A site map example is shown in Figure 1. The value is always a positive number and is defined for each site as the difference between the highest and lowest points within each site, as shown in Figure 2. For a wafer to meet an LTV specification, all sites
44、 must have LTV values less than the specified value IEC 62276:2005, 3.7.8 1 n 2 3 IEC 1419/10 Figure 1 Example of site distribution for LTV measurement. All sites have their centres within the FQA LTV Site 1 Site n .Site 3 .Site 2 Back surface IEC 1420/10 Figure 2 LTV is a positive number and is mea
45、sured at each site 3.21 manufacturing lot manufacturing lot is established by agreement between customer and supplier IEC 62276:2005, 3.2 3.22 orange peel large featured, roughened surface visible to the unaided eye under diffuse illumination DD IEC/TS 61994-4-4:2010 8 TS 61994-4-4 IEC:2010(E) IEC 6
46、2276:2005, 3.16.7 3.23 orientation flat OF flat portion of wafer perimeter indicating the crystal orientation. Generally, the orientation flat corresponds to the SAW propagation direction. It is also referred to as the “primary flat” (see Figure 3) IEC 62276:2005, 3.5 3.24 percent local thickness va
47、riation PLTV percentage of sites that fall within the specified values for LTV. As with the LTV measurement, this is a clamped measurement IEC 62276:2005, 3.7.9 3.25 pit non-removable surface anomaly such as a hollow, typically resulting from a bulk defect or faulty manufacturing process IEC 62276:2
48、005, 3.16.6 3.26 polarization (or poling) process electrical process used to establish a single domain crystal IEC 62276:2005, 3.3.3 3.27 reduced LN LN treated with a reduction process, sometimes referred to as “black LN” IEC 62276:2005, 3.3.4.1 3.28 reduced LT LT treated with a reduction process, s
49、ometimes referred to as “black LT” IEC 62276:2005, 3.3.4.2 3.29 reduction process REDOX reaction to increase conductivity to reduce the harmful effects of pyroelectricity IEC 62276:2005, 3.3.4 3.30 reference plane depends on the flatness measurement and needs to be specified. It can be any of the following: a) for clamped measurements, the flat chuck surface that contacts the back surface of
