1、BSI Standards PublicationSemiconductor devicesPart 16-5: Microwave integrated circuits OscillatorsBS EN 60747-16-5:2013National forewordThis British Standard is the UK implementation of EN 60747-16-5:2013. It isidentical to IEC 60747-16-5:2013.The UK participation in its preparation was entrusted to
2、 TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards
3、 Institution 2013.Published by BSI Standards Limited 2013ISBN 978 0 580 62661 6ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 30 September 2013.Amend
4、ments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 60747-16-5:2013EUROPEAN STANDARD EN 60747-16-5 NORME EUROPENNE EUROPISCHE NORM September 2013 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches K
5、omitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-5:2013 E ICS 31.080.99 English version Semiconductor devices - Pa
6、rt 16-5: Microwave integrated circuits - Oscillators (IEC 60747-16-5:2013) Dispositifs semiconducteurs - Partie 16-5: Circuits intgrs hyperfrquences - Oscillateurs (CEI 60747-16-5:2013) Halbleiterbauelemente - Teil 16-5: Integrierte Mikrowellenschaltkreise - Oszillatoren (IEC 60747-16-5:2013) This E
7、uropean Standard was approved by CENELEC on 2013-07-24. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical refere
8、nces concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a
9、CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugo
10、slav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. BS EN 60747-16-5:2013EN 60747-16-5:2013 - 2
11、- Foreword The text of document 47E/452/FDIS, future edition 1 of IEC 60747-16-5, prepared by SC 47E, “Discrete semiconductor devices“, of IEC TC 47, “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-16-5:2013. The following dates are fixed: l
12、atest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2014-04-24 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2016-07-24 Attention is drawn to the possi
13、bility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 60747-16-5:2013 was approved by CENELEC as a European S
14、tandard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated: IEC 60679-1:2007 NOTE Harmonized as EN 60679-1:2007 (not modified). BS EN 60747-16-5:2013- 3 - EN 60747-16-5:2013 Annex ZA (normative) Normative references to i
15、nternational publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest editi
16、on of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60617 Data base Graphical symbols for diagrams - - IEC 60747-1 + c
17、orr. August + A1 2006 2008 2010 Semiconductor devices - Part 1: General - - IEC 60747-4 2007 Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors - - IEC 60747-16-3 + A1 2002 2009 Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters E
18、N 60747-16-3 + A1 2002 2009 IEC 61340-5-1 - Electrostatics - Part 5-1: Protection of electronic devices from electrostatic phenomena - General requirements EN 61340-5-1 - IEC/TR 61340-5-2 - Electrostatics - Part 5-2: Protection of electronic devices from electrostatic phenomena - User guide CLC/TR 6
19、1340-5-2 - BS EN 60747-16-5:2013 2 60747-16-5 IEC:2013 CONTENTS 1 Scope . 8 2 Normative references . 8 3 Terms and definitions . 8 4 Essential ratings and characteristics . 11 4.1 General requirements 11 4.1.1 Circuit identification and types . 11 4.1.2 General function description 11 4.1.3 Manufact
20、uring technology 11 4.1.4 Package identification 11 4.2 Application description 11 4.2.1 Conformance to system and/or interface information . 11 4.2.2 Overall block diagram 11 4.2.3 Reference data 11 4.2.4 Electrical compatibility . 12 4.2.5 Associated devices 12 4.3 Specification of the function 12
21、 4.3.1 Detailed block diagram Functional blocks . 12 4.3.2 Identification and function of terminals . 12 4.3.3 Function description 13 4.4 Limiting values (absolute maximum rating system) 13 4.4.1 Requirements 13 4.4.2 Electrical limiting values 14 4.4.3 Temperatures 14 4.5 Operating conditions (wit
22、hin the specified operating temperature range) . 15 4.6 Electrical characteristics 15 4.7 Mechanical and environmental ratings, characteristics and data 16 4.8 Additional information 16 5 Measuring methods 16 5.1 General . 16 5.1.1 General precautions 16 5.1.2 Characteristic impedance 17 5.1.3 Handl
23、ing precautions . 17 5.1.4 Types 17 5.2 Oscillation frequency (fosc) . 17 5.2.1 Purpose . 17 5.2.2 Circuit diagram 17 5.2.3 Principle of measurement 17 5.2.4 Circuit description and requirements 17 5.2.5 Precautions to be observed . 17 5.2.6 Measurement procedure 18 5.2.7 Specified conditions 18 5.3
24、 Output power (Po,osc) . 18 5.3.1 Purpose . 18 5.3.2 Circuit diagram 18 5.3.3 Principle of measurement 18 BS EN 60747-16-5:201360747-16-5 IEC:2013 3 5.3.4 Circuit description and requirements 18 5.3.5 Precautions to be observed . 18 5.3.6 Measurement procedure 18 5.3.7 Specified conditions 18 5.4 Ph
25、ase noise (L (f) 19 5.4.1 Purpose . 19 5.4.2 Measuring methods . 19 5.5 Tuning sensitivity (Sf,v) 24 5.5.1 Purpose . 24 5.5.2 Circuit diagram 24 5.5.3 Principle of measurement 24 5.5.4 Circuit description and requirements 24 5.5.5 Precautions to be observed . 24 5.5.6 Measurement procedure 24 5.5.7
26、Specified conditions 24 5.6 Frequency pushing (fosc,push) 24 5.6.1 Purpose . 24 5.6.2 Circuit diagram 25 5.6.3 Principle of measurement 25 5.6.4 Circuit description and requirements 25 5.6.5 Precautions to be observed . 25 5.6.6 Measurement procedure 25 5.6.7 Specified conditions 25 5.7 Frequency pu
27、lling (fosc,pull) 25 5.7.1 Purpose . 25 5.7.2 Circuit diagram 25 5.7.3 Principle of measurement 26 5.7.4 Circuit description and requirements 26 5.7.5 Precautions to be observed . 26 5.7.6 Measurement procedure 26 5.7.7 Specified conditions 27 5.8 n-th order harmonic distortion ratio (Pnth/P1) 27 5.
28、8.1 Purpose . 27 5.8.2 Circuit diagram 27 5.8.3 Principle of measurement 27 5.8.4 Circuit description and requirements 27 5.8.5 Measurement procedure 27 5.8.6 Specified conditions 27 5.9 Output power flatness (Po,osc) 28 5.9.1 Purpose . 28 5.9.2 Circuit diagram 28 5.9.3 Principle of measurement 28 5
29、.9.4 Circuit description and requirements 28 5.9.5 Precautions to be observed . 28 5.9.6 Measurement procedure 28 5.9.7 Specified conditions 28 5.10 Tuning linearity 28 5.10.1 Purpose . 28 5.10.2 Circuit diagram 28 BS EN 60747-16-5:2013 4 60747-16-5 IEC:2013 5.10.3 Principle of measurement 29 5.10.4
30、 Circuit description and requirements 29 5.10.5 Precautions to be observed . 29 5.10.6 Measurement procedure 29 5.10.7 Specified conditions 30 5.11 Frequency temperature coefficient (f,temp) . 30 5.11.1 Purpose . 30 5.11.2 Circuit diagram 30 5.11.3 Principle of measurement 30 5.11.4 Circuit descript
31、ion and requirements 31 5.11.5 Precautions to be observed . 31 5.11.6 Measurement procedure 31 5.11.7 Specified conditions 31 5.12 Output power temperature coefficient (P,temp) 31 5.12.1 Purpose . 31 5.12.2 Circuit diagram 31 5.12.3 Principle of measurement 31 5.12.4 Circuit description and requirem
32、ents 32 5.12.5 Precautions to be observed . 32 5.12.6 Measurement procedure 32 5.12.7 Specified conditions 32 5.13 Spurious distortion ratio (Ps/P1) 32 5.13.1 Purpose . 32 5.13.2 Circuit diagram 32 5.13.3 Principle of measurement 32 5.13.4 Circuit description and requirements 33 5.13.5 Measurement p
33、rocedure 33 5.13.6 Specified conditions 33 5.14 Modulation bandwidth (Bmod) 33 5.14.1 Purpose . 33 5.14.2 Circuit diagram 33 5.14.3 Principle of measurement 34 5.14.4 Circuit description and requirements 34 5.14.5 Precautions to be observed . 34 5.14.6 Measurement procedure 34 5.14.7 Specified condi
34、tions 35 5.15 Sensitivity flatness 35 5.15.1 Purpose . 35 5.15.2 Circuit diagram 35 5.15.3 Principle of measurement 35 5.15.4 Circuit description and requirements 36 5.15.5 Precautions to be observed . 36 5.15.6 Measurement procedure 36 5.15.7 Specified conditions 36 6 Verifying methods . 36 6.1 Loa
35、d mismatch tolerance (L) . 36 6.1.1 Purpose . 36 6.1.2 Verifying method 1 (spurious intensity) 36 BS EN 60747-16-5:201360747-16-5 IEC:2013 5 6.1.3 Verifying method 2 (no discontinuity of frequency tuning characteristics of VCO) 37 6.2 Load mismatch ruggedness (R) 38 6.2.1 Purpose . 38 6.2.2 Circuit
36、diagram 38 6.2.3 Circuit description and requirements 38 6.2.4 Precautions to be observed . 38 6.2.5 Test Procedure 38 6.2.6 Specified conditions 39 Bibliography 40 Figure 1 Circuit diagram for the measurement of the oscillation frequency fosc17 Figure 2 Circuit diagram for the measurement of the ph
37、ase noise L (f) (method 1) . 20 Figure 3 Circuit diagram for the measurement of the phase noise L (f) (method 2) . 21 Figure 4 Circuit diagram for the measurement of the phase noise L (f) (method 3) . 22 Figure 5 Circuit diagram for the measurement of the frequency pulling fosc,pull26 Figure 6 Tunin
38、g linearity 29 Figure 7 Circuit diagram for the measurement of the oscillation frequency temperature coefficient f,temp30 Figure 8 Circuit diagram for the measurement of the modulation bandwidth Bmod. 34 Figure 9 Sensitivity flatness . 36 Table 1 Comparison of phase noise measuring methods 19 BS EN
39、60747-16-5:2013 8 60747-16-5 IEC:2013 SEMICONDUCTOR DEVICES Part 16-5: Microwave integrated circuits Oscillators 1 Scope This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit oscillators. This standard is applic
40、able to the fixed and voltage-controlled semiconductor microwave oscillator devices, except the oscillator modules such as synthesizers which require external controllers. NOTE This document is not applicable to the quartz crystal controlled oscillators. They are specified by IEC 60679-1. 2 Normativ
41、e references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) app
42、lies. IEC 60617, Graphical symbols for diagrams (available from ) IEC 60747-1:2006, Semiconductor devices Part 1: General 1) Amendment 1:2010 IEC 60747-4:2007, Semiconductor devices Discrete devices Part 4: Microwave diodes and transistors IEC 60747-16-3:2002, Semiconductor devices Part 16-3: Microw
43、ave integrated circuits Frequency converters 2) Amendment 1:2009 IEC 61340-5-1, Electrostatics Part 5-1: Protection of electronic devices from electrostatic phenomena General requirements IEC/TR 61340-5-2, Electrostatics Part 5-2: Protection of electronic devices from electrostatic phenomena User gu
44、ide 3 Terms and definitions 3.1 oscillation frequency foscfrequency measured at the output port _ 1)A consolidated edition (2010) exists, including IEC 60747-1:2006 and its Amendment 1. 2)A consolidated edition (2010) exists, including IEC 60747-16-3:2002 and its Amendment 1. BS EN 60747-16-5:201360
45、747-16-5 IEC:2013 9 3.2 output power Po,oscpower measured at the output port 3.3 phase noise L (f) frequency-domain measure of the short-term frequency stability of an oscillator, normally expressed as the power spectral density of the phase fluctuations, S(f), where the phase fluctuation function i
46、s (t) = 2 Ft-2F0t Note 1 to entry: The spectral density of phase fluctuation can be directly related to the spectral density of frequency fluctuation by ( ) ( ) Hz/rad220fSfFfSy= where F is the oscillator frequency; F0is the average oscillator frequency; f is the Fourier frequency. Note 2 to entry:
47、L (f) is pronounced “script-ell of f“. SOURCE: IEC 60679-1:2007, 3.2.25, modified A symbol and two notes have been added. The explanation of the spectral density of phase fluctuation has been moved to a note 3.4 tuning sensitivity Sf,vratio of the change of oscillation frequency to the variation of
48、the control voltage 3.5 frequency pushing fosc,pushchange of the oscillation frequency with the variation of the bias voltage 3.6 frequency pulling fosc,pullchange of the oscillation frequency with all phase angles for constant load reflection coefficient 3.7 n-th order harmonic distortion ratio Pnt
49、h/P1ratio of the power of the n-th order harmonic component at the output port to the output power at the oscillation frequency 3.8 oscillation frequency range difference between the oscillation frequencies at the maximum control voltage and at the minimum control voltage BS EN 60747-16-5:2013 10 60747-16-5 IEC:2013 3.9 output power flatness Po,oscdifference between the maximum and the minimum output power within the control voltage range 3.10 t
