1、INTERNATIONALSTANDARDIEC60747-16-1First edition2001-11Semiconductor devices Part 16-1:Microwave integrated circuits AmplifiersDispositifs semiconducteurs Partie 16-1:Circuits intgrs hyperfrquences AmplificateursReference numberIEC 60747-16-1:2001(E)Copyright International Electrotechnical Commission
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9、TERNATIONALSTANDARDIEC60747-16-1First edition2001-11Semiconductor devices Part 16-1:Microwave integrated circuits AmplifiersDispositifs semiconducteurs Partie 16-1:Circuits intgrs hyperfrquences AmplificateursPRICE CODE IEC 2001 Copyright - all rights reservedNo part of this publication may be repro
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12、2 60747-16-1 IEC:2001(E)CONTENTSFOREWORD.41 Scope.52 Normative references .53 Terminology .54 Essential ratings and characteristics.74.1 General .74.2 Application related description.84.3 Specification of the function 94.4 Limiting values (absolute maximum rating system) 104.5 Operating conditions (
13、within the specified operating temperature range) .124.6 Electrical characteristics124.7 Mechanical and environmental ratings, characteristics and data144.8 Additional information145 Measuring methods 145.1 General .145.2 Linear (power) gain (Glin).155.3 Linear (power) gain flatness (Glin) .175.4 Po
14、wer gain (Gp).185.5 (Power) gain flatness (Gp) .185.6 (Maximum available) gain reduction (Gred) 195.7 Limiting output power (Po(ltg) 205.8 Output power (Po)215.9 Output power at 1 dB gain compression (Po(1dB) 225.10 Noise figure (F) .235.11 Intermodulation distortion (Pn/P1) (two-tone)255.12 Power a
15、t the intercept point (for intermodulation products) (Pn(IP) 275.13 Magnitude of the input reflection coefficient (input return loss) (s11) 285.14 Magnitude of the output reflection coefficient (output return loss) (s22) 295.15 Magnitude of the reverse transmission coefficient (isolation) (s12) .335
16、.16 Conversion coefficient of amplitude modulation to phase modulation (AM-PM) 345.17 Group delay time (td(grp).365.18 Power added efficiency .375.19 nth order harmonic distortion ratio (Pnth/P1) .395.20 Output noise power (PN).405.21 Spurious intensity under specified load VSWR (Psp/Po) .42Copyrigh
17、t International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-1 IEC:2001(E) 3 Figure 1 Circuit for the measurements of linear gain 15Figure 2 Basic circuit for the measurement of the noise f
18、igure .23Figure 3 Basic circuit for the measurements of two-tone intermodulation distortion 25Figure 4 Circuit for the measurements of magnitude of input/output reflectioncoefficient (input/output return loss)28Figure 5 Circuit for the measurement of output reflection coefficient 31Figure 6 Circuit
19、for the measurement of isolation .33Figure 7 Basic circuit for the measurement of (AM-PM)34Figure 8 Circuit for the measurement of the power added efficiency.37Figure 9 Circuit for the measurements of the nth order harmonic distortion ratio 39Figure 10 Circuit diagram for the measurement of the outp
20、ut noise power .41Figure 11 Circuit diagram for the measurement of the spurious intensity43Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 4 60747-16-1 IEC:2001(E)INTERNATIONAL
21、 ELECTROTECHNICAL COMMISSION_SEMICONDUCTOR DEVICES Part 16-1: Microwave integrated circuits AmplifiersFOREWORD1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprisingall national electrotechnical committees (IEC National Committees). The objec
22、t of the IEC is to promoteinternational co-operation on all questions concerning standardization in the electrical and electronic fields. Tothis end and in addition to other activities, the IEC publishes International Standards. Their preparation isentrusted to technical committees; any IEC National
23、 Committee interested in the subject dealt with mayparticipate in this preparatory work. International, governmental and non-governmental organizations liaisingwith the IEC also participate in this preparation. The IEC collaborates closely with the InternationalOrganization for Standardization (ISO)
24、 in accordance with conditions determined by agreement between thetwo organizations.2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, aninternational consensus of opinion on the relevant subjects since each technical committee has representationfro
25、m all interested National Committees.3) The documents produced have the form of recommendations for international use and are published in the formof standards, technical specifications, technical reports or guides and they are accepted by the NationalCommittees in that sense.4) In order to promote
26、international unification, IEC National Committees undertake to apply IEC InternationalStandards transparently to the maximum extent possible in their national and regional standards. Anydivergence between the IEC Standard and the corresponding national or regional standard shall be clearlyindicated
27、 in the latter.5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for anyequipment declared to be in conformity with one of its standards.6) Attention is drawn to the possibility that some of the elements of this International Standard may be the sub
28、jectof patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discretesemiconductor devices, of IEC technical committee 47: Semiconductor devices.The text of this standard is base
29、d on the following documents:FDIS Report on voting47E/200/FDIS 47E/204/RVDFull information on the voting for the approval of this standard can be found in the report onvoting indicated in the above table.This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.The committe
30、e has decided that the contents of this publication will remain unchangeduntil 2004. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended.A bilingual version of this standard may be issued at a later date.Copyright International Electrotechnical Com
31、mission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-1 IEC:2001(E) 5 SEMICONDUCTOR DEVICES Part 16-1: Microwave integrated circuits Amplifiers1 ScopeThis part of IEC 60747 provides the terminology, the essential ratin
32、gs and characteristics, aswell as the measuring methods for integrated circuit microwave power amplifiers.2 Normative referencesThe following normative documents contain provisions which, through reference in this text,constitute provisions of this part of IEC 60747. For dated references, subsequent
33、 amend-ments to, or revisions of, any of these publications do not apply. However, parties toagreements based on this part of IEC 60747 are encouraged to investigate the possibility ofapplying the most recent editions of the normative documents indicated below. For undatedreferences, the latest edit
34、ion of the normative document referred to applies. Members of IECand ISO maintain registers of currently valid International Standards.IEC 60617-12:1997, Graphical symbols for diagrams Part 12: Binary logic elementsIEC 60617-13:1993, Graphical symbols for diagrams Part 13: Analogue elementsIEC 60747
35、-1:1983, Semiconductor devices Discrete devices Part 1: GeneralIEC 60747-7:2000, Semiconductor devices Part 7: Bipolar transistorsIEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integratedcircuitsIEC 60748-3:1986, Semiconductor devices Integrated circuits Part 3: Analogue
36、 integratedcircuitsIEC 60748-4:1997, Semiconductor devices Integrated circuits Part 4: Interface integratedcircuits3 Terminology3.1linear (power) gain Glinpower gain in the linear region of the power transfer curve Po (dBm) = f(Pi)NOTE In this region, Po (dBm) = Pi (dBm).3.2linear (power) gain flatn
37、ess Glinpower gain flatness when the operating point lies in the linear region of the power transfercurve3.3power gain Gp, Gratio of the output power to the input powerNOTE Usually the power gain is expressed in decibels.Copyright International Electrotechnical Commission Provided by IHS under licen
38、se with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 6 60747-16-1 IEC:2001(E)3.4(power) gain flatness Gpdifference between the maximum and minimum power gain for a specified input power in aspecified frequency range3.5(maximum available) gain reduction Greddif
39、ference in decibels between the maximum and minimum power gains that can be providedby the gain control3.6 Output power limiting3.6.1output power limiting rangerange in which, for rising input power, the output power is limitingNOTE For specification purposes, the limits of this range are specified
40、by specified lower and upper limit valuesfor the input power.3.6.2limiting output power Po(ltg)output power in the range where it is limiting3.6.3limiting output power flatness Po(ltg)difference between the maximum and minimum output power in the output power limitingrange:Po(ltg)= Po(ltg,max) Po(lt
41、g,min)3.7intermodulation distortion Pn/Piratio ofthe output power of the nth order component tothe output power of the fundamental component,at a specified input power3.8power at the intercept point (for intermodulation products) Pn(IP)output power at intersection between the extrapolated output pow
42、ers of the fundamentalcomponent and the nth order intermodulation components, when the extrapolation is carriedout in a diagram showing the output power of the components (in decibels) as a function ofthe input power (in decibels)3.9magnitude of the input reflection coefficient (input return loss) s
43、11see 3.5.2.1 of IEC 60747-73.10magnitude of the output reflection coefficient (output return loss) s22see 3.5.2.2 of IEC 60747-73.11magnitude of the reverse transmission coefficient (isolation) s12see 3.5.2.4 of IEC 60747-7Copyright International Electrotechnical Commission Provided by IHS under li
44、cense with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-1 IEC:2001(E) 7 3.12conversion coefficient of amplitude modulation to phase modulation (AM-PM)quotient ofthe phase deviation of the output signal (in degrees) bythe change in input power (in decib
45、els) producing it3.13group delay time td(grp)ratio of the change, with angular frequency, of the phase shift through the amplifierNOTE Usually group delay time is very close in value to input-to-output delay time.3.14nth order harmonic distortion ratio Pnth/P1ratio of the power of the nth order harm
46、onic component measured at the output port of thedevice to the power of the fundamental frequency measured at the output port for a specifiedoutput power3.15output noise power PNmaximum noise power measured at the output port of the device within a specified bandwidthin a specified frequency range f
47、or a specified output power3.16spurious intensity under specified load VSWR Psp/Poratio of the maximum spurious power measured at the output port of the device to the powerof the fundamental frequency measured at the output port under specified load VSWR4 Essential ratings and characteristics4.1 Gen
48、eral4.1.1 Circuit identification and types4.1.1.1 Designation and typesThe indication of type (device name), the category of the circuit and the technology appliedshould be given.Microwave amplifiers are divided into four categories:Type A: Low-noise type.Type B: Auto-gain control type.Type C: Limiting type.Type D: Power type.4.1.1.2 General function descriptionA general description of the function performed by the integrated circuit microwave amplifiersand the features for the application should be made.Copyright International Electrotechnical Commis
