1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 15: Test method of bonding strength between PDMS and glassBS EN 62047-15:2015National forewordThis British Standard is the UK implementation of EN 62047-15:2015. It isidentical to IEC 62047-15:2015.The UK participatio
2、n in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its corre
3、ct application. The British Standards Institution 2015.Published by BSI Standards Limited 2015ISBN 978 0 580 70802 2ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy
4、 Committee on 31 July 2015.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-15:2015EUROPEAN STANDARDNORME EUROPENNEEUROPISCHE NORMEN 62047-15 July 2015 ICS 31.080.99 English Version Semiconductor devices - Micro-electromechanical devices - Part 15: Test met
5、hod of bonding strength between PDMS and glass (IEC 62047-15:2015) Dispositifs semiconducteurs - Dispositifsmicrolectromcaniques - Partie 15: Mthode dessai de la rsistance de collage entre PDMS et verre (IEC 62047-15:2015) Halbleiterbauelemente - Bauelemente derMikrosystemtechnik - Teil 15: Prfverfa
6、hren zurBondqualitt zwischen PDMS und Glas (IEC 62047-15:2015) This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standar
7、d without any alteration.Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in a
8、ny other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia
9、, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey
10、and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation ElectrotechniqueEuropisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2015 CENELEC All rights of exploitation in any form and by
11、any means reserved worldwide for CENELEC Members. Ref. No. EN 62047-15:2015 E EN 62047-15:2015 2 European foreword The text of document 47F/208/FDIS, future edition 1 of IEC 62047-15, prepared by SC 47F “Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CE
12、NELEC parallel vote and approved by CENELEC as EN 62047-15:2015. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2016-01-10 latest date by which the national standards co
13、nflicting with the document have to be withdrawn (dow) 2018-04-09 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice T
14、he text of the International Standard IEC 62047-15:2015 was approved by CENELEC as a European Standard without any modification. BS EN 62047-15:2015EN 62047-15:2015 3 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following
15、documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE 1 When an Intern
16、ational Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here: www.cenelec.eu. Publication Year Title EN/HD Year IEC 62047-9 - Semico
17、nductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS EN 62047-9 - BS EN 62047-15:2015 2 IEC 62047-15:2015 IEC 2015 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 Testing method 6 4.1 Visual test . 6 4.1
18、.1 General . 6 4.1.2 Equipment . 6 4.1.3 Procedure 6 4.1.4 Visual test results 6 4.2 Bonding strength test 6 4.2.1 General . 6 4.2.2 Sample preparation . 7 4.2.3 Procedure 7 4.2.4 Result of blister test . 8 4.3 Contact angle measurement . 8 4.3.1 General . 8 4.3.2 Equipment . 8 4.3.3 Procedure 8 4.3
19、.4 Result of test . 9 4.4 Hermeticity test . 9 4.4.1 General . 9 4.4.2 Equipment . 9 4.4.3 Procedure 10 4.4.4 Result of test . 10 Bibliography 11 Figure 1 Blister mask . 7 Figure 2 PDMS blister 8 Figure 3 Contact angle measurement of water drop on PDMS 9 Figure 4 Test set-up for hermeticity 10 Table
20、 1 Result of visual test . 6 BS EN 62047-15:2015IEC 62047-15:2015 IEC 2015 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 15: Test method of bonding strength between PDMS and glass FOREWORD 1) The International Electrotechnical Commission (IE
21、C) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in additio
22、n to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
23、 in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with co
24、nditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC N
25、ational Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the
26、 way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any
27、IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity
28、. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of
29、 its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any
30、other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be
31、the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-15 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard i
32、s based on the following documents: FDIS Report on voting 47F/208/FDIS 47F/213/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
33、BS EN 62047-15:2015 4 IEC 62047-15:2015 IEC 2015 A list of all parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchange
34、d until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this
35、publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. BS EN 62047-15:2015IEC 62047-15:2015 IEC 2015 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Par
36、t 15: Test method of bonding strength between PDMS and glass 1 Scope This part of IEC 62047 describes test method for bonding strength between poly dimethyl siloxane (PDMS) and glass. Silicone-based rubber, PDMS, is used for building of chip-based microfluidic devices fabricated using lithography an
37、d replica moulding processes. The problem of bonding strength is mainly for high pressure applications as in the case of certain peristaltic pump designs where an off chip compressed air supply is used to drive the fluids in micro channels created by a twin layer, one formed by bondage between glass
38、 with replica moulded PDMS and another between PDMS and PDMS. Also, in case of systems having pneumatic microvalves, a relatively high level of bonding particularly between two replica moulded layers of PDMS becomes quite necessary. Usually there is a leakage and debonding phenomena between interfac
39、e of bonded areas, which causes unstability and shortage of lifetime for MEMS devices. This standard specifies general procedures on bonding test of PDMS and glass chip. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispens
40、able for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-9, Semiconductor devices Micro-electromechanical devices Part 9: Wafer to wafer bonding strength measure
41、ment for MEMS 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 complete bonded area bonded wafer without void areas 3.2 hydrophilic physical property of a molecule that can bond with water (H2O) through hydrogen bonding Note 1 to entry: A defi
42、nition of the term “molecule“ can be found on this page: http:/en.wikipedia.org/wiki/Molecule. Note 2 to entry: A definition of “hydrogen bond“ can be found on this page: http:/en.wikipedia.org/wiki/Hydrogen_bonding. 3.3 hydrophobic property that tend to be non-polar molecules which form aggregates
43、of like molecules in water and analogous intramolecular interactions BS EN 62047-15:2015 6 IEC 62047-15:2015 IEC 2015 3.4 PDMS silicone-based rubber poly dimethyl siloxane having a chemical formula of (H3C)3SiOSi(CH3)2OnSi(CH3)34 Testing method 4.1 Visual test 4.1.1 General The visual test should be
44、 performed to confirm whether substantial other bonding tests are required. Visual test is a simple qualitative test method. Optical equipment shall be used to evaluate the bonding interface of glass to PDMS and PDMS to PDMS. 4.1.2 Equipment One or a few equipments of optical microscope, scanning ac
45、oustic microscope, scanning electron microscope (SEM), transmittion electron microscope (TEM) and infra-red (IR) or optical camera can be used. 4.1.3 Procedure The procedure is as follows: a) to observe bonding conditions using the optical microscope; b) to measure voids areas and bubbles using imag
46、es observed images by optical microscope and IR camera. 4.1.4 Visual test results The test results can be classified into three classes after observation based on the Key in Table 1 for each. Table 1 Result of visual test Type numbers or serial numbers of objective wafer Good Fair Poor 1 2 3 Key Goo
47、d complete bonded area larger than 95 % Fair complete bonded area larger than 75 % Poor complete bonded area larger than 50 % 4.2 Bonding strength test 4.2.1 General The bond strength is measured using the blister test wherein a blister of 3 mm diameter is made in PDMS using photolithography and rep
48、lica moulding techniques. General requirements are given in IEC 62047-9. BS EN 62047-15:2015IEC 62047-15:2015 IEC 2015 7 4.2.2 Sample preparation The masks for selective patterning are designed and printed by using a high-resolution printer (see Figure 1). Figure 1 Blister mask The fabrication of th
49、e blister is done in two layers. The negative photoresist is spun onto a cleaned glass wafer of 63,5 mm diameter. The typical thickness of the resist is about 200 m after spinning. The negative photoresist is next patterned using the mask as shown in Figure 1. This negative is used to cast the PDMS up to 2,5 mm thickness. After curing the PDMS cast, pieces of size 12,7 mm 12,7 mm are cut around the blister shapes. These are then bonded to pieces of plain
