1、BSI Standards PublicationBS ISO 22493:2014Microbeam analysis Scanning electron microscopy VocabularyBS ISO 22493:2014 BRITISH STANDARDNational forewordThis British Standard is the UK implementation of ISO 22493:2014. Itsupersedes BS ISO 22493:2008 which is withdrawn.The UK participation in its prepa
2、ration was entrusted to TechnicalCommittee CII/9, Microbeam analysis.A list of organizations represented on this committee can beobtained on request to its secretary.This publication does not purport to include all the necessaryprovisions of a contract. Users are responsible for its correctapplicati
3、on. The British Standards Institution 2014. Published by BSI StandardsLimited 2014ISBN 978 0 580 84447 8ICS 01.040.37; 01.040.71; 37.020; 71.040.50Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards P
4、olicy and Strategy Committee on 30 April 2014.Amendments issued since publicationDate Text affectedBS ISO 22493:2014 ISO 2014Microbeam analysis Scanning electron microscopy VocabularyAnalyse par microfaisceaux Microscopie lectronique balayage VocabulaireINTERNATIONAL STANDARDISO22493Second edition20
5、14-04-15Reference numberISO 22493:2014(E)BS ISO 22493:2014ISO 22493:2014(E)ii ISO 2014 All rights reservedCOPYRIGHT PROTECTED DOCUMENT ISO 2014All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized otherwise in any form or by any means, electronic
6、or mechanical, including photocopying, or posting on the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address below or ISOs member body in the country of the requester.ISO copyright officeCase postale 56 CH-1211 Geneva 20Tel. + 41 22 7
7、49 01 11Fax + 41 22 749 09 47E-mail copyrightiso.orgWeb www.iso.orgPublished in SwitzerlandBS ISO 22493:2014ISO 22493:2014(E) ISO 2014 All rights reserved iiiContents PageForeword ivIntroduction v1 Scope . 12 Abbreviated terms 13 Terms and definitions used in the physical basis of SEM . 14 Terms and
8、 definitions used in SEM instrumentation . 55 Terms and definitions used in SEM image formation and processing .126 Terms and definitions used in SEM image interpretation and analysis .167 Terms and definitions used in the measurement and calibration of SEM image magnification and resolution .18Bibl
9、iography .20BS ISO 22493:2014ISO 22493:2014(E)ForewordISO (the International Organization for Standardization) is a worldwide federation of national standards bodies (ISO member bodies). The work of preparing International Standards is normally carried out through ISO technical committees. Each memb
10、er body interested in a subject for which a technical committee has been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. ISO collaborates closely with the International Ele
11、ctrotechnical Commission (IEC) on all matters of electrotechnical standardization.The procedures used to develop this document and those intended for its further maintenance are described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the different types
12、of ISO documents should be noted. This document was drafted in accordance with the editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. ISO shall not be hel
13、d responsible for identifying any or all such patent rights. Details of any patent rights identified during the development of the document will be in the Introduction and/or on the ISO list of patent declarations received (see www.iso.org/patents).Any trade name used in this document is information
14、 given for the convenience of users and does not constitute an endorsement.For an explanation on the meaning of ISO specific terms and expressions related to conformity assessment, as well as information about ISOs adherence to the WTO principles in the Technical Barriers to Trade (TBT) see the foll
15、owing URL: Foreword - Supplementary informationThe committee responsible for this document is ISO/TC 202, Microbeam analysis, Subcommittee SC 1, Terminology.This second edition cancels and replaces the first edition (ISO 22493:2008), of which it constitutes a minor revision.iv ISO 2014 All rights re
16、servedBS ISO 22493:2014ISO 22493:2014(E)IntroductionThe scanning electron microscopy (SEM) technique is used to observe and characterize the surface morphology and structure of solid materials, such as metal alloys, ceramics, glasses, minerals, polymers, powders, etc., on a spatial scale of micromet
17、er down to nanometer laterally. In addition, three-dimensional structure can be generated by using a combination of focused ion beam and scanning-electron-based analysis techniques. The SEM technique is based on the physical mechanism of electron optics, electron scattering and secondary electron em
18、ission.As a major sub-field of microbeam analysis (MBA), the SEM technique is widely applied in diverse sectors (high-tech industries, basic industries, metallurgy and geology, biology and medicine, environmental protection, trade, etc.) and has a strong business base that needs standardization.Stan
19、dardizing the terminology of a technical field is one of the basic prerequisites for development of standards on other aspects of that field.This International Standard is relevant to the need for an SEM terminology that contains consistent definitions of terms as they are used in the practice of sc
20、anning electron microscopy by the international scientific and engineering communities that employ the technique. This International Standard is the second one developed in a package of standards on electron probe microanalysis (EPMA), scanning electron microscopy (SEM), analytical electron microsco
21、py (AEM), energy-dispersive X-ray spectroscopy (EDS), etc., developed or to be developed by Technical Committee ISO/TC 202, Microbeam analysis, Subcommittee SC 1, Terminology, to cover the complete field of MBA. ISO 2014 All rights reserved vBS ISO 22493:2014BS ISO 22493:2014Microbeam analysis Scann
22、ing electron microscopy Vocabulary1 ScopeThis International Standard defines terms used in the practice of scanning electron microscopy (SEM). It covers both general and specific concepts, classified according to their hierarchy in a systematic order, with those terms that have already been defined
23、in ISO 23833 also included, where appropriate.This International Standard is applicable to all standardization documents relevant to the practice of SEM. In addition, some clauses of this International Standard are applicable to documents relevant to related fields (e.g. EPMA, AEM, EDS) for the defi
24、nition of terms which are relevant to such fields.2 Abbreviated termsAEM analytical electron microscope/microscopyBSE (BE) backscattered electronCPSEM controlled pressure scanning electron microscope/microscopyCRT cathode ray tubeEBIC electron beam induced currentEBSD electron backscatter/backscatte
25、ring diffractionEDS energy-dispersive spectrometer/spectrometryEPMA electron probe microanalyser/analysisESEM environmental scanning electron microscope/microscopyFWHM full width at half maximumSE secondary electronSEM scanning electron microscope/microscopyVPSEM variable-pressure scanning electron
26、microscope/microscopy3 Terms and definitions used in the physical basis of SEM3.1electron opticsscience that deals with the passage of electrons through electrostatic and/or electromagnetic fields3.1.1electron sourcedevice that generates electrons necessary for forming an electron beam in the electr
27、on optical system3.1.1.1energy spreaddiversity of energy of electronsINTERNATIONAL STANDARD ISO 22493:2014(E) ISO 2014 All rights reserved 1BS ISO 22493:2014ISO 22493:2014(E)3.1.1.2effective source sizeeffective dimension of the electron source3.1.2electron emissionejection of electrons from the sur
28、face of a material under given excitation conditions3.1.2.1field emissionelectron emission caused by the strong electric field on and near the surface of a material3.1.2.1.1cold field emissionfield emission in which the emission process relies purely on the high-strength electrostatic field in a hig
29、h-vacuum environment with the cathode operating at ambient temperature3.1.2.1.2thermal field emissionSchottky emissionfield emission in which the emission process relies on both the elevated temperature of the cathode tip and an applied electric field of high voltage in a high-vacuum environment3.1.
30、2.2thermionic emissionelectron emission that relies on the use of high temperature to enable electrons in the cathode to overcome the work function energy barrier and escape into the vacuum3.1.3electron lensbasic component of an electron optical system, using an electrostatic and/or electromagnetic
31、field to change the trajectories of the electrons passing through it3.1.3.1electrostatic lenselectron lens employing an electrostatic field formed by a specific configuration of electrodes3.1.3.2electromagnetic lenselectron lens employing an electromagnetic field formed by a specific configuration o
32、f electromagnetic coil (or permanent magnet) and pole piece3.1.4focusingaiming the electrons onto a particular point using an electron lens3.1.5demagnificationnumerical value by which the diameter of the electron beam exiting a lens is reduced in comparison to the diameter of the electron beam enter
33、ing the lens3.2electron scatteringelectron deflection and/or its kinetic energy loss as a result of collision(s) with target atom(s) or electron(s)3.2.1elastic scatteringelectron scattering in which energy and momentum are conserved in the collision system2 ISO 2014 All rights reservedBS ISO 22493:2
34、014ISO 22493:2014(E)3.2.1.1backscatteringelectron scattering in which the incident electrons scatter backwards and out of the target after suffering deflections3.2.2inelastic scatteringelectron scattering in which energy and/or momentum are not conserved in the collision systemNote 1 to entry: For i
35、nelastic scattering, the electron trajectory is modified by a small angle, generally less than 0,01 rad.3.2.3scattering cross-sectionhypothetical area normal to the incident radiation that would geometrically intercept the total amount of radiation actually scattered by a scattering particleNote 1 t
36、o entry: Scattering cross-section is usually expressed only as area (m2).3.2.4mean free pathmean distance between electron scattering events in any material3.2.5Bethe rangeestimate of the total distance an electron can travel in any material (including vacuum and a target), obtained by integrating t
37、he Bethe stopping power equation over the energy range from the incident value to a low threshold value (e.g. 1 keV)Note 1 to entry: This assumes that the electron loses energy continuously in the material rather than as occurs in practice where energy is lost in discrete scattering events.3.3backsc
38、attered electronBSEelectron ejected from the entrance surface of the specimen by the backscattering processNote 1 to entry: By convention, an electron ejected with an energy greater than 50 eV may be considered as a backscattered electron.3.3.1backscattering coefficientBSE yieldratio of the total nu
39、mber of backscattered electrons to the total number of incident electrons3.3.2BSE angular distributiondistribution of backscattered electrons as a function of their emitting angle relative to the specimen surface normal3.3.3BSE atomic number dependencevariation of backscattering coefficient as a fun
40、ction of the atomic number of the specimen3.3.4BSE beam energy dependencevariation of backscattering coefficient with beam energy ISO 2014 All rights reserved 3BS ISO 22493:2014ISO 22493:2014(E)3.3.5BSE depth distributiondistribution describing the locations of the electrons at their maximum depth i
41、n the specimen before subsequently being backscattered from the specimen surface3.3.6BSE energy distributiondistribution of backscattered electrons as a function of their emitting energy3.3.7BSE escape depthmaximum depth in a specimen from which a backscattered electron may emerge3.3.8BSE lateral sp
42、atial distributiontwo-dimensional distribution of backscattered electrons escaping as a function of the distance from the beam impact point to the lateral position of escape3.4secondary electronelectron emitted from a specimen as a result of bombardment by the primary electronsNote 1 to entry: By co
43、nvention, an electron with energy less than 50 eV is considered as a secondary electron.3.4.1SE yieldsecondary electron coefficienttotal number of secondary electrons per incident electron3.4.2SE angular distributiondistribution of secondary electrons as a function of their emitting angle relative t
44、o the surface normal3.4.3SE energy distributiondistribution of secondary electrons as a function of their emitting energy3.4.4SE escape depthmaximum depth under a surface from which secondary electrons are emitted3.4.5SE tilt dependenceeffect on secondary electrons of the specimen tilt which accompa
45、nies a change in incident beam angle3.4.6SE1(SEI)secondary electrons that are generated by the incident beam electrons within the specimen3.4.7SE2(SEII)secondary electrons that are generated by the backscattered electrons within the specimen3.4.8SE3(SEIII)secondary electrons that are generated by th
46、e electrons backscattered from the specimen somewhere remotely beyond the point of incidence4 ISO 2014 All rights reservedBS ISO 22493:2014ISO 22493:2014(E)3.4.9SE4(SEIV)secondary electrons that are generated by the incident beam electrons within the electron optical column3.5electron penetrationphy
47、sical process of forwards travelling by an energetic incident beam electron before losing all its energy within the target (specimen)3.5.1electron rangemeasure of the straight-line penetration distance of electrons in a solid3.5.2interaction volumevolume below the incident electron beam impact area
48、at the specimen surface, within which the beam electrons travel and experience elastic and inelastic scattering3.5.3information volumevolume of the specimen from which the measured signal originates3.5.4penetration depthdepth to which an incident electron travels in a target3.5.5Monte Carlo simulati
49、oncalculation that simulates stochastic physical processes (here: the electron diffusion in the solid state) and thus can be used to model the electron probe - sample interaction and SEM image formation3.6electron channellingphysical process occurring in crystalline materials of greater electron penetration along directions of low atomic density3.7electron diffractionphysical process of particularly strong scattering of the incident electron beam at certain angles relative to the atomic planes in a crystal3.7.1electron backscattering diffra
