1、BRITISH STANDARD BSQC 790109:1992 Incorporating Amendment No.1 Specification for Harmonized system of quality assessment for electronic components Semiconductor devices Integratedcircuits Family specification HCMOS digital integrated circuits, series54/74HC,54/74HCT,54/74HCUBSQC790109:1992 BSI01-200
2、0 ISBN 0 580 34070 8 Amendments issued since publication Amd. No. Date of issue Comments 8377 September 1994 Indicated by a sideline in the marginBSQC790109:1992 BSI 01-2000 i Contents Page National foreword ii Introduction 1 1 Mechanical description 2 2 Short description 2 3 Categories of assessed
3、quality 2 4 Limiting values 3 5 Electrical characteristics 3 6 Marking 13 7 Ordering information 13 8 Test conditions and inspection requirements 14 9 Group D Qualification approval tests 17 10 Supplementary information 17 Table I Group A Lot by lot 14 Table II Group B Lot by lot 15 Table III Group
4、C Periodic tests 16BSQC790109:1992 ii BSI 01-2000 National foreword This British Standard has been prepared under the direction of the Electronic Component Standards Policy Committee, ECL/-. It is identical with IEC Publication748-2-2 QC790109 “Semiconductor devices. Integrated circuits. Part2: Digi
5、tal integrated circuits.Section2.Family specification for HCMOS digital integrated circuits, series54/74HC,54/74HCT,54/74HCU” as amended by Amendment No.1 published in June1994 published by the International Electrotechnical Commission IEC and is a harmonized specification within the IECQ system of
6、quality assessment for electronic components. This Family Specification is one of a series of blank detail specifications for semiconductor devices to be used with BS QC700000 “Generic specification for discrete devices and integrated circuits” and BS QC790100 “Sectional specification for semiconduc
7、tor integrated circuits excluding hybrid circuits”. Cross-references International Standard a Corresponding British Standard IEC68-2-17 BS2011: Environmental testing Part2.1Q:1981 TestQ. Sealing Identical IEC191-2 BS3934:1992 Mechanical standardization of semiconductor devices. Part2. Schedule of in
8、ternationaldrawings giving dimensions Identical IEC747-10 BS QC700000:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Generic specification for discrete devices and integrated circuits Identical IEC748-2 BS6493: Semiconductor devices Part2. Integrated c
9、ircuits Section2.2:1986 Recommendations for digital integrated circuits Identical IEC748-2-3 BS QC790130:1992 Harmonized system of quality assessment for semiconductor devices. Blank detail specification for HCMOS digital integrated circuits series54/74 HC,54/74HCT,54/74HCU Identical IEC748-11 BS QC
10、790100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for semiconductor integrated circuits excluding hybrid circuits Identical IEC749 BS6493:1991 Semiconductor devices.Part3:1985 Mechanical and climatic test methods Identical Q
11、C001002 BS QC001002:1991 Rules of Procedure of the IEC Quality Assessment System for Electronic Components IECQ Identical a Undated in the text.BSQC790109:1992 BSI 01-2000 iii A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are re
12、sponsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pagesi toiv, pages1to19 and a back cover. This standard has been updated (see copyrigh
13、t date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover.iv blankBSQC790109:1992 BSI 01-2000 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under th
14、e authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countrie
15、s without the need for further testing. This family specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC Publication: 747-10/QC700000, Semiconductor devices Part10: Generic specification for discrete devices and integrated
16、 circuits. 748-11/QC790100, Semiconductor devices Integrated circuits Part11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits. Required information Numbers shown in brackets on this and the following pages correspond to the following items of required informat
17、ion, which should be entered in the spaces provided. Identification of the detail specification Identification of the component 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and
18、 issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information, if required by the national system. 5 Main function and type number. 6 Information on typical construction (materials, the main technology) and th
19、e package. If the device has several kinds of derivative products, those differences shall be indicated, e.g.feature of characteristics in the comparison table. If the device is sensitive to electrostatic charges, a caution statement shall be added in the detail specification. 7 Outline drawing, ter
20、minal identification, marking and/or reference to the relevant document for outlines. 8 Category of assessed quality according to subclause2.6 of the generic specification. 9 Reference data. The clauses given in square brackets on the next pages of this standard, which form the front page of the det
21、ail specification, are intended for guidance to the specification writer and shall not be included in the detail specification. When confusion may arise as to whether a paragraph is only instruction to the writer or not, the paragraph shall be indicated between brackets.BSQC790109:1992 2 BSI 01-2000
22、 Name (address) of responsible NAI (andpossiblyof body from which specification is available). 1 Number of IECQ detail specification, plus issue number and/or date. QC790109-. 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional s
23、pecification: Publication748-11/QC790100 andnationalreferences if different. 3 National number of detail specification This box need not be used if National number repeats IECQ number. 4 FAMILY SPECIFICATION FOR HCMOS DIGITAL INTEGRATED CIRCUITS, SERIES54/74 HC,54/74 HCT,54/74 HCU Type number(s) of
24、the relevant device(s). Ordering information: seeclause7 of this standard. 5 1. Mechanical description Outline references: IEC191-2 . . . . . mandatory of if available and/or national if there is no IEC outline. Outline drawing may be transferred to or given with more details in clause10 of this sta
25、ndard. Terminal identification drawing showing pin assignments, including graphical symbols. Marking: letters and figures. The detail specification shall prescribe the information to be marked on the device, if any. Seesubclause 2.5 of generic specification and/or clause6 of this standard. 7 2. Shor
26、t description High-speed CMOS Series HC, HCT, HCU Semiconductor material: Si. Encapsulation: cavity or non-cavity. Technology: Complementary MOS. CAUTION: Electrostatic sensitive devices. 6 3. Categories of assessed quality from subclause 2.6 of the generic specification. 8 Reference data Seedetail
27、specification. 9 Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC790109:1992 BSI 01-2000 3 4 Limiting values (absolute maximum rating system) Limiting values are not for inspection purposes. These valu
28、es apply over the operating temperature range unless otherwise specified. The values given are valid unless otherwise specified in the detail specification. 5 Electrical characteristics (Seeclause8 of this standard for inspection requirements.) Recommended supply voltage range: These electrical char
29、acteristics apply over the operating temperature range, unless otherwise stated. All voltages are referenced to V SS . Subclause Limiting values Symbol Value Unit Min. Max. 4.1 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.10 Supply voltage Input voltage Continuous current (any input) Output voltage Continuous curr
30、ent (any output) Continuous output source or sink current per output pin Continuous I DDor ground pin current Operating temperature range 54/HC/HCT/HCU 74/HC/HCT/HCU Storage temperature V DD V I | I Ik | V o | I ok | | I ok | standard busdriver | I DD | standard ou | I SS | bus driver T amb T stg 0,
31、5 0,5 0,5 55 40 65 +7 V DD +0,5 20 V DD +0,5 20 25 35 50 70 +125 +85 +150 V V mA V mA mA mA mA mA C C C HC series: V DDmin =2V to V DDmax =6V. HCT series: V DDmin =4,5V to V DDmax =5,5V. HCU series: V DDmin =2V to V DDmax =6V.BSQC790109:1992 4 BSI 01-2000 For notes, seepage5. HC series Subclause Par
32、ameters Symbol T amb Unit Tested in subgroup V DD 54HC/74HC seenote1 74HC seenote2 54HC seenote3 V Min. Max. Min. Max. Min. Max. 5.1 Quiescent device current V I = ou V DD I O =O I DD A3/4 SSI FF MSI LSI seenote4 6 6 6 6 I DD 2 4 8 50 20 40 80 500 40 80 160 1000 4A 4A 4A 4A 5.2 High-level input volt
33、age 2 4,5 6 V IH 1,5 3,15 4,2 1,5 3,15 4,2 1,5 3,15 4,2 V V V A3/4 5.3 Low-level input voltage 2 4,5 6 V IL 0,3 0,9 1,2 0,3 0,9 1,2 0,3 0,9 1,2 V V V A3/4 5.4 5.4.1 High-level output voltage V I =V IHBor V ILA I O=204A 2 4,5 6 V OH 1,9 4,4 5,9 1,9 4,4 5,9 1,9 4,4 5,9 V V V A3/4 5.4.2 I O :4mA (stand
34、ardoutputs) I O :6mA (busdriveroutputs) 4,5 3,98 3,84 3,7 V I O =5,2mA (standard outputs) I O =7,8mA (busdriver outputs) 6 5,48 5,34 5,2 V 5.5 5.5.1 Low-level output voltage V I = V IHB or V ILA I O =+204A 2 4,5 6 V OL 0,1 0,1 0,1 0,1 0,1 0,1 0,1 0,1 0,1 V V V A3/4 5.5.2 I O =+4mA (standard outputs)
35、 I O =+6mA (bus driver outputs) 4,5 0,26 0,33 0,4 V I O =+5,2mA (standard outputs) I O =+7,8mA (bus driver outputs) 6 0,26 0,33 0,4 V BSQC790109:1992 BSI 01-2000 5 NOTE 125 C. NOTE 240 to+85 C. NOTE 355 to+125 C. NOTE 4The detail specification shall indicate whether the device is a SSI, FF, MSI or L
36、SI. NOTE 5V EE : Additional negative supply voltage for some analogue switches, to be specified in the detail specification. NOTE 6Unless otherwise specified in the detail specification. HC series Subclause Parameters Symbol T amb Unit Tested in subgroup V DD 54HC/74HC seenote1 74HC seenote2 54HC se
37、enote3 V Min. Max. Min. Max. Min. Max. 5.6 5.6.1 5.6.2 Off-state input leakage current V I = V DD V I = O Off-state output leakage current 6 I I I I 0,1 0,1 1 1 1 1 4A 4A A3/4 A3/4 A3/4 5.7 Analogue switch off-state current per channel V I = V IHB or V ILA |V S |=V DDor=V DD V EE seenote5 6 I S 0,1
38、1 1 4A A3/4 5.8 Three-state output off-state current V I = V IHBor V ILA V O = O or V DD 6 I OZA 0,5 5 10 4A A3/4 5.9 5.9.1 5.9.2 Capacitance Input capacitance Output capacitance seenote6 Three-state outputs 4,5 C IA C OZ 10 15 10 15 10 15 pF pF C12BSQC790109:1992 6 BSI 01-2000 For notes, seepage5.
39、HCT-series Subclause Parameters Symbol T amb Unit Tested in subgroup V DD 54HCT/74HCT seenote1 74HCT seenote2 54HCT seenote3 V Min. Max. Min. Max. Min. Max. 5.12 5.12.1 Quiescent supply voltage V I = O or V DD I O =O I DD A3/4 SSI FF MSI LSI seenote4 5,5 5,5 5,5 5,5 2 4 8 50 20 40 80 500 40 80 160 1
40、000 4A 4A 4A 4A 5.13 High-level input voltage 5,5 V IH 2 2 2 V A3/4 5.14 Low-level input voltage 4,5 V IL 0,8 0,8 0,8 V A3/4 5.15 5.15.1 High-level input voltage V I = V IHBor V ILA I O =204A 4,5 V OHB 4,4 4,4 4,4 V A3/4 5.15.2 I O =4mA (standard outputs) I O =6mA (busdriver outputs) 4,5 3,98 3,84 3
41、,7 V 5.16 5.16.1 Low-level input voltage V I = V IHBor V ILA I O =+204A 4,5 V OLA 0,1 0,1 0,1 V A3/4 5.16.2 I O =+4mA (standard outputs) I O =+6mA (bus driver outputs) 4,5 0,26 0,33 0,40 V 5.17 5.17.1 5.17.2 Off-state input leakage current V I = O or V DD V I = V IHB Off-state output leakage current
42、 5,5 5,5 I I 0,1 100 1 125 1 150 4A 4A A3/4 5.18 Analogue switch off-state current per channel V I = V IHBor V ILA V S = V DDor=V DD V EE seenote5 5,5 I S 0,1 1 1 4A A3/4 BSQC790109:1992 BSI 01-2000 7 For notes, seepage5. HCT-series Subclause Parameters Symbol T amb Unit Tested in subgroup V DD 54HC
43、T/74HCT seenote1 74HCT seenote2 54HCT seenote3 V Min. Max. Min. Max. Min. Max. 5.19 Three-state output off-state current V I = V IHBor V ILA V O = O or V DD 5,5 I OZA 0,5 5 10 4A A3/4 5.20 5.20.1 5.20.2 Capacitance Input capacitance Output capacitance seenote6 Three-state outputs 5 C I C OZ 10 10 10
44、 pF C12 HCU-series Subclause Parameters Symbol T amb Unit Tested in subgroup V DD 54HCU/74HCU seenote1 74HCU seenote2 54HCU seenote3 V Min. Max. Min. Max. Min. Max. 5.23 Quiescent supply current V I = O orV DD I O=O I DD A3/4 SSI FF MSI seenote4 6 6 6 2 4 8 20 40 80 40 80 160 4A 4A 4A 5.24 High-leve
45、l input voltage 2 4,5 6 V IHB 1,7 3,6 4,8 1,7 3,6 4,8 1,7 3,6 4,8 V A3/4 5.25 Low-level input voltage 2 4,5 6 V ILA 0,3 0,8 1,1 0,3 0,8 1,1 0,3 0,8 1,1 V A3/4 5.26 5.26.1 5.26.2 High-level output voltage V I = V IHBor V ILA I O =204A V I = O orV DD I O =4mA (standardoutputs) I O =5,2mA (busdriverout
46、puts) 2 4,5 6 4,5 6 V OHB 1,8 4 5,5 3,98 5,48 1,8 4 5,5 3,84 5,34 1,8 4 5,5 3,7 5,2 V V V V V A3/4 BSQC790109:1992 8 BSI 01-2000 For notes, seepage5. 5.32 Dynamic characteristics (Series HC, HCT, HCU) Pulse generator and driving circuit. 5.32.1 The following conditions shall be met: Output impedance
47、 of pulse generator:507 10%. Impedance of driving circuit cable from the generator, including the test equipment: 507 10%. Low-level input voltage:0V 0,1V. High-level input voltage: V DD 0,1V (Series HC, HCU);3V 0,1V (Series HCT). Rise transition time of the input signal: t r =6ns1ns (measured from1
48、0%or90% of the step amplitude). Fall transition time of the input signal: t f =6ns 1ns (measured from90% or10% of the step amplitude). Pulse width: t w =500ns (unless otherwise specified in the detail specification). Pulse repetition frequency:1MHz. 5.32.2 Output transition time (HC and HCT) Transit
49、ion times are tested in sub-group A5. For notes, seepage5. HCU-series Subclause Parameters Symbol T amb Unit Tested in subgroup V DD 54HCU/74HCU seenote1 74HCU seenote2 54HCU seenote3 V Min. Max. Min. Max. Min. Max. 5.27 5.27.1 5.27.2 Low-level output voltage V I = V IHBor V ILA I O =+204A V I = O orV DD I O =+4mA (s
