1、 REVISIONS LTR DESCRIPTION DATE APPROVED Devices on this drawing may be used as a substitute for MIL-S-19500/186 which has been inactivated for new design. Prepared in accordance with ASME-14.100 Selected item drawing REV REV STATUS OF PAGES PAGES 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY Roger Kissel DE
2、FENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsearch.aspOriginal date of drawing: CHECKED BY Jason Hochstetler 11 August 2008 APPROVED BY Thomas M. Hess TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, RF MIXER, TYPES 1N53B,1N53BR, 1N53BM, 1N53BMR SIZE A CODE IDENT
3、. NO. 037Z3 DWG NO. 08011 REV PAGE 1 OF 8 AMSC N/A 5961-E088 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 Scope. This drawing describes the requirements for silicon semiconductor diodes, types: 1N53B (forward polarity); 1N53BR (revers
4、e polarity); 1N53BM (matched forward pair); and 1N53BMR (matched forward and reverse), for use as a mixer (first detector) in a K-band receiver. This drawing supersedes MIL-S-19500/186. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as follows: 08011 - 1N53B X| | | | | | Drawing num
5、ber Device Matched pair (see 4.4.3 and 4.4.4) 1.2.1 Device types. The device type shall identify the polarity and voltage of the devices as follows: Device type Figure number08011-1N53B 1 08011-1N53BR 1 08011-1N53BM08011-1N53BMR 1 1.3 Ratings. LcNFoVSWR Type 1N53B 1/ Z(IF)ohms dB dB Ratio TOPand TST
6、GMinimum 500 Maximum 700 6.5 10 1.6 -65 to +150C 1/ Ratings for type 1N53B are applicable to all types having additional suffixes. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docum
7、ents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5
8、 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docume
9、nts are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/a
10、ssist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this d
11、ocument and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 R
12、EV PAGE 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3. REQUIREMENTS 3.1 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.1.1 Plating. Finish shall be .0001 in. (0.00
13、3 mm) gold plate over .0001 in. (0.003 mm) nickel flash, or solder over .0001 in. (0.003 mm) nickel flash. Tin content of components and solder shall not exceed 97 percent, by mass. Tin shall be alloyed with a minimum of 3 percent lead, by mass. 3.2 Abbreviations, symbols, and definitions. Abbreviat
14、ions, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: LC- Conversion loss. NFo - Overall noise figure. NRo - Output noise ratio. Z(IF) - Intermediate frequency (IF) impedance. 3.3 Marking. The marking shall be placed on each device in accordance with MIL-P
15、RF-19500. 3.3.1 Matched diodes. Diodes meeting the matching requirements shown in 1.2.1 of this drawing shall be marked in accordance with MIL-PRF-19500 and as specified herein (see 4.4.3 and 4.4.4). The “M“ suffix marking for matched diodes shall be omitted in the type designation on each device. D
16、iodes meeting the matching requirements of this drawing shall be packaged with a statement to that effect (see 4.4.3 and 4.4.4). 3.4 Burn-out by single pulse. At the end of all manufacturing processes, and prior to selecting samples for testing, all diodes shall be subjected to 100 percent burn-out
17、by single pulse test which shall be performed in accordance with method 4146 of MIL-STD-750 and E = 50 V dc, minimum. 3.5 Manufacturer eligibility. To be eligible to supply devices to this drawing, the manufacturer shall perform conformance testing in accordance with 4.3 herein. Devices specified he
18、rein shall meet traceability and lot formation requirements of MIL-PRF-19500, except as modified by the procuring activity. It is prohibited for a manufacturer not listed as an approved source to mark devices with this drawing number. 3.6 Certificate of compliance. A certificate of compliance shall
19、be required from manufacturers requesting to be an approved source of supply in 6.5. The certificate of compliance submitted to DSCC-VAC, prior to listing as a source of supply in 6.5, shall state that the manufacturers product meets the applicable requirements of MIL-PRF-19500 and the requirements
20、herein. 3.7 Certificate of conformance. A certificate of conformance shall be provided with each lot of devices delivered in accordance with this drawing. 3.8 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to
21、the maximum extent possible provided that the material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.9 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceabilit
22、y, or appearance. 4. VERIFICATION 4.1 Sampling and inspection. Unless otherwise specified, sampling and inspection shall be performed in accordance with MIL-PRF-19500, and as specified herein. 4.2 Test conditions. Unless otherwise specified herein, the test conditions, when applicable, shall be as f
23、ollows: a. f = 34,860 MHz 140 MHz. b. P = 1.0 mW 5 percent. c. RL= 100 1 . d. Zm= 500 10 , + jo . DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 REV PAGE 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4.3
24、Conformance inspection. Conformance inspection shall consist of the inspections and tests specified in 4.3.1 and 4.3.2 herein. 4.3.1 Group A inspection. Group A inspection shall consist of the inspections and tests specified in table I. 4.3.2 Group B inspection. Group B inspection shall consist of t
25、he inspections and tests specified in table II. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.4.1 Microwave parameters. The Lc, NFo, and NRo parameters may be determined by any suitable combination of measured parameters selected f
26、rom among the following: Lc, NFIF actual), NFo(actual), and NRo. A measurement of either Lcor NRo, but not both, is required. NFoshall be determined for an assumed or actual intermediate-frequency noise figure (NFIF) of 1.5 0.25 dB. 4.4.2 Output noise ratio NRo. The plunger in the noise measuring ap
27、paratus shall be set at a position which delivers the maximum power as evidenced by maximum diode current to an average diode, from a group of diodes, that meet initial conversion loss, IF impedance, and VSWR limits. 4.4.3 Matched pair, “M” suffix (forward polarity). The matched forward pair (M suff
28、ix) shall consist of two diodes, tested to requirements of table I, subgroup 3, herein, having the cathode connected to the center conductor. 4.4.4 Matched pair, “MR” suffix (forward and reverse polarity). The matched forward pair (MR suffix) shall consist of two diodes, tested to requirements of ta
29、ble I, subgroup 3, herein, one diode having the cathode connected to the center conductor (forward polarity) and the second diode having the anode connected to the center conductor (reverse polarity). DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 REV PAGE 4
30、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Voltage standing wave ratio 4136 SCL-567
31、9/1 2/ VSWR 1.6 Overall noise figure 4126 Test condition A; SCL-5679/1 2/ (see 4.4.1) NFo10 dB Subgroup 3 Conversion loss 4101 SCL-5679/1 2/ (see 4.4.1) LC6.5 dB IF impedance 4116 SCL-5679/1 2/ Z(IF)500 700 ohms Output noise ratio 4121 SCL-5679/1 2/ (see 4.4.1) NRo2.0 times Matched pair requirements
32、 (see 4.4.3 and 4.4.4) Conversion loss unbalance 4101 LC0.3 dB IFimpedance unbalance 4116 Z(IF)25 ohms 1/ For sampling plan, see MIL-PRF-19500. 2/ SCL-5679/1 - Crystal mixer SAGE 221 or equivalent. DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 REV PAGE 5 Pr
33、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE II. Group B inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Physical dimensions 2066 Dimensions A, C, E, and G (see figure 1); dimensions C and H (see f
34、igure 1, note 2) Subgroup 2 Thermal shock (temperature cycling) 1051 Test condition A; T(high)= +150C +5C, -0C; T(low)= -65C +0C, -5C Moisture resistance 1021 Omit initial conditioning End points: Overall noise figure 4126 Test condition A; ( see 4.4.2) NFo11.0 dB Subgroup 3 Burn-out by repetitive p
35、ulsing 4141 eo= 5 V, Rg= 50 ohms; 60,000 pulses minimum, tp= 1.0 s, PRF optional End points See table I, subgroup 2 Subgroup 4 Shock 2016 500 G; t 1 ms 5 blows in each orientation: X1, Y1, and Y2Vibration, variable frequency 2056 15 G; 50 to 2,000 Hz Constant acceleration 2006 10,000 G; X1, Y1, and
36、Y2 orientations End points See table I, subgroup 2 Subgroup 5 High temperature operation TA= 150C +5C, -0C Conversion loss 4101 See 4.4.1 LC8.5 dB Subgroup 6 High temperature life (nonoperating) 1031 TA= 150C +5C, -0C End points See table I, subgroup 2 DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT
37、 NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 REV PAGE 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Dimensions Inches Millimeters Ltr Min Max Min Max NOTE A .158 .162 4.01 4.11 4 B .123 .127 3.12 3.23 C .545 .555 13.84 14.10 D .281 7.14 4 E .044 .04
38、6 1.12 1.17 F .019 .021 0.48 0.53 G .099 2.51 H .010 .018 0.25 0.46 J .082 2.08 6 NOTES: 1. Finish: .0001 in. (.003 mm) gold plate or .0001 in. (.003 mm) silver plate. 2. Axis of center conductor shall not deviate from axis of outer conductor, referred to its outside diameter, more than .002 in. (0.
39、051 mm). 3. Standard units shall have the cathode connected to the center conductor. Reversed units shall have the anode connected to the center conductor. 4. Outside diameter, .215 in. (5.46 mm) to .220 in. (5.58 mm) applies for length of dimension D. 5. This edge to be sharp and free from burrs. 6
40、. Space for matching transformer when used. 7. Dimensions are in inches. Millimeters are given for general information only. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Semiconductor device, diode types 1N53B, 1N53BR, 1N53BM, and 1N53BMR. DEFENSE SUPPLY CENT
41、ER, COLUMBUS SIZE CODE IDENT NO. DWG NO. COLUMBUS, OHIO A 037Z3 08011 REV PAGE 7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
42、 order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging activities
43、within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (T
44、his section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. Devices conforming to this drawing are intended for use when performance specifications do not exist and qualified military devices that will perform the required functio
45、n are not available for OEM application. This drawing is intended to prevent the proliferation of unnecessary duplicate specifications, drawings, and catalog stock listings. 6.2 Acquisition requirements. The acquisition requirements should specify the following: a. Complete PIN (see 1.2). b. Require
46、ments for delivery of one copy of the conformance inspection data or certificate of compliance that parts have passed conformance inspection with each shipment of parts by the manufacturer. c. Requirements for packaging and packing. 6.3 Replaceability. Devices covered by this drawing shall replace t
47、he same generic device covered by a contractor-prepared specification or drawing. This drawing supersedes MIL-S-19500/186. 6.4 Comments. Comments on this drawing should be directed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990 or emailed to Semiconductord
48、scc.dla.mil . 6.5 Approved sources of supply. Approved sources of supply are listed herein. Additional sources will be added as they become available. The vendors listed herein have agreed with this drawing and have submitted a certificate of compliance (see 3.6 herein) to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990 or emailed to Semiconductordscc.dla.mil . DEFENSE SUPPLY CENTER, COLUMBUS SIZE CODE IDENT NO. DWG NO. REV PAGE 8 (1) Parts must be purchased to this DSCC PIN to assure that all performance r
