1、 REVISIONSLTR DESCRIPTION DATE APPROVEDPrepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 Original date of drawing YY-MM-DD CHECK
2、ED BY RAJESH PITHADIA TITLE MICROCIRCUIT, LINEAR, 1 A, HIGH OUTPUT CURRENT PULSE WIDTH MODULATION CONVERTER, MONOLITHIC SILICON 09-09-29 APPROVED BY CHARLES F. SAFFLE SIZE A CODE IDENT. NO. 16236 DWG NO. V62/09645 REV PAGE 1 OF 11 AMSC N/A 5962-V080-09 Provided by IHSNot for ResaleNo reproduction or
3、 networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a 1 A, high output current pulse width modulation converter microcircuit,
4、with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/09645
5、- 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 TPS5410-EP 1 A, high output current pulse width modulation converter 1.2.2 Case outline(s). The case outline(s) are as specified herein. Outl
6、ine letter Number of pins JEDEC PUB 95 Package style X 8 MS-012-AA Plastic surface mount1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacture: Finish designator Material A Hot solder dip B Tin-lead plateC Gold plateD PalladiumE Gol
7、d flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 3 1.3 Absolute maximum ratings. 1/ 2/ Input voltage range (VIN): VINpin -0
8、.3 V to 40 V 3/ BOOT pin . -0.3 V to 50 V PH pin (steady state) -0.6 V to 40 V 3/ ENA pin -0.3 V to 7 V VSENSE pin . -0.3 V to 3 V BOOT-PH pin . 10 V PH pin (transient 10 ns) -1.2 V Source current (IO) (PH pin) . Internally limited Leakage current (IILK) (PH pin) 10 A Operating virtual junction temp
9、erature range . -55C to +150C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. 4/ Input voltage range (VIN) . 5.5 V to 36 V Operating junction temperature range (TJ) -55C to +125C 1.5 Dissipation ratings table. 5/ 6/ Package Thermal impedance junction to ambient Case out
10、line X 7/ 75C/W 1/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not impl
11、ied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2/ All voltage values are with respect to network ground terminal. 3/ Approaching the absolute maximum rating for the VINpin may cause the voltage on the PH pin to exceed the absolute maximum ratin
12、g. 4/ Use of this product beyond the manufacturers design rules or stated parameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. 5/ Maximum power dissipation may be limited by overcurrent protection
13、. 6/ Power rating at a specific ambient temperature TAshould be determined with a junction temperature of 125C. This is the point where distortion starts to substantially increase. Thermal management of the final printed circuit board (PCB) should strive to keep the junction temperature at or below
14、125C for best performance and long term reliability. See thermal calculations in the application section of the manufacturers datasheet for more information. 7/ Test board conditions: 3 inch x 3 inch, two layers, thickness: 0.062 inch (1.57 mm). 2 ounce copper traces located on the top and bottom of
15、 the PCB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 4 2. APPLICABLE DOCUMENTS JEDEC PUB 95 Registered and Standard Outlines for Semiconductor
16、Devices (Applications for copies should be addressed to the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3
17、herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum a
18、nd recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline. The case out
19、line shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. 3.5.3 Block diagram. The block diagram shall be as shown in figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DE
20、FENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 5 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions VIN= 5.5 V to 36 V unless otherwise specifiedTemperature, TJDevice type Limits Unit Min Max Supply voltage (VINpin) section
21、 Quiescent current IQVSENSE = 2 V, not switching, PH pin open -55C to +125C 01 4.4 mA Shutdown, ENA = 0 V 50 A Undervoltage lockout (UVLO) section Start threshold voltage, UVLO VTH-55C to +125C 01 5.3 typical V Hysteresis voltage, UVLO VHYS-55C to +125C 01 330 typical mV Voltage reference section Vo
22、ltage reference accuracy VRA25C 01 1.202 1.239 V IO= 0 A - 1 A -55C to +125C 1.192 1.245 Oscillator section Internally set free running frequency fISFR+25C 01 400 600 kHz -55C to +125C 380 600 Minimum controllable on time tcmin-55C to +125C 01 210 ns Maximum duty cycle DCMAX-55C to +125C 01 87 % Ena
23、ble (ENA pin) section Start threshold voltage, ENA VSTART-55C to +125C 01 1.3 V Stop threshold voltage, ENA VSTOP-55C to +125C 01 0.5 V Hysteresis voltage, ENA VHYS-55C to +125C 01 450 typical mV Internal slow start time tISS(0 100%) -55C to +125C 01 5.35 10 ms See footnote at end of table. Provided
24、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 6 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions VIN= 5.5 V to 36 V un
25、less otherwise specifiedTemperature, TJDevice type Limits Unit Min Max Current limit section Current limit IL+25C 01 1.2 1.8 A -55C to +125C 0.45 4.6 Current limit hiccup time tCL-55C to +125C 01 13 22.5 ms Thermal shutdown section Thermal shutdown trip point TTSTP-55C to +125C 01 135 C Thermal shut
26、down hysteresis TTSH-55C to +125C 01 14 typical C Output MOSFET section High side power MOSFET switch rDS(on)VIN= 5.5 V -55C to +125C 01 150 typical m VIN= 10 V 36 V 110 typical 1/ Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over
27、 the specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters may not necessarily be tested. In the absence of specific parametric testing, product performance is assured by characterization and/or design. Provided by IHSNot for ResaleNo
28、 reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 7 Case X FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
29、DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 8 Case X continued. Symbol Dimensions Inches Millimeters Min Max Min Max A - 0.069 - 1.75 A1 0.004 0.010 0.10 0.25 b 0.012 0.020 0.31 0.51 c 0.005 0.010 0.13 0.25 D 0.189 0.197 4.80 5.00 E 0.150 0.1
30、57 3.80 4.00 E1 0.228 0.244 5.80 6.20 e 0.050 BSC 1.27 BSC L 0.016 0.050 0.40 1.27 n 8 8 NOTES: 1. Controlling dimensions are millimeter, inch dimensions are given for reference only. 2. For dimension c, body length does not include mold flash, protrusion, or gate burrs. Mold flash, protrusion, or g
31、ate burrs shall not exceed 0.006 inch (0.15 mm) per end. 3. For dimension E, body width does not include interlead flash. Interlead flash shall not exceed 0.017 inch (0.43 mm) per side. 4. Falls within reference to JEDEC MS-012-AA. FIGURE 1. Case outline continued. Provided by IHSNot for ResaleNo re
32、production or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 9 Device type 01 Case outline X Terminal number Terminal symbol Description 1 BOOT Boost capacitor for the high side field effect tran
33、sistor (FET) gate driver. Connect 0.01 F low equivalent series resistance (ESR) capacitor from BOOT pin to PH pin. 2 NC Not connected internally.3 NC Not connected internally. 4 VSENSE Feedback voltage for the regulator. Connect to output voltage divider. 5 ENA On/off control. Below 0.5 V, the devic
34、e stops switching. Float the pin to enable. 6 GND Ground. 7 VINInput supply voltage. Bypass VINpin to GND pin close to device package with a high quality low ESR ceramic capacitor. 8 PH Source of the high side power metal oxide semiconductor field effect transistor (MOSFET). Connected to external in
35、ductor and diode. FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 10 FIGURE 3. Block diagram. Provided by IHSNot for
36、 ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09645 REV PAGE 11 4. VERIFICATION 4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and t
37、est requirements as indicated in their internal documentation. Such procedures should include proper handling of electrostatic sensitive devices, classification, packaging, and labeling of moisture sensitive devices, as applicable. 5. PREPARATION FOR DELIVERY 5.1 Packaging. Preservation, packaging,
38、labeling, and marking shall be in accordance with the manufacturers standard commercial practices for electrostatic discharge sensitive devices. 6. NOTES 6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum. 6.2 Configuration control. The data contained
39、herein is based on the salient characteristics of the device manufacturers data book. The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided. 6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supp
40、ly herein is not to be construed as a guarantee of present or continued availability as a source of supply for the item. Vendor item drawing administrative control number 1/ 2/ Device manufacturer CAGE code Input voltage Output voltage Vendor part number V62/09645-01XE 01295 5.5 V to 36 V Adjustable
41、 to 1.22 V TPS5410MDREP 1/ The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation. 2/ For the most current package and ordering information, see the package option addendum at the end of the manufacturers data sheet , or use web
42、site . CAGE code Source of supply 01295 Texas Instruments, Inc. Semiconductor Group8505 Forest Lane P.O. Box 660199 Dallas, TX 75243 Point of contact: U.S. Highway 75 South P.O. Box 84, M/S 853 Sherman, TX 75090-9493 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
