1、 INCHPOUND MILSTD7505 3 January 2012 SUPERSEDING MILSTD750E (IN PART) 20 November 2006 (see 6.4) DEPARTMENT OF DEFENSE TEST METHOD STANDARD HIGH RELIABILITY SPACE APPLICATION TEST METHODS FOR SEMICONDUCTOR DEVICES PART 5: TEST METHODS 5000 THROUGH 5999 AMSC N/A FSC 5961 The documentation and process
2、 conversion measured necessary to comply with this revision shall be completed by 3 July 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Departme
3、nt of Defense. 2. This entire standard has been revised. This revision has resulted in many changes to the format, but the most significant one is the splitting the document into parts. See MILSTD750 for the change summary. 3. Comments, suggestions, or questions on this document should be addressed
4、to: Commander, Defense Logistics Agency, DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assis
5、t.daps.dla.mil. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 iii CONTENTS PARAGRAPH PAGE FOREWORDii 1. SCOPE . 1 1.1 Purpose . 1 1.2 Numbering system 1 1.2.1 Classification of tests . 1 1.2.2 Test method revisions . 1 1.3 Methods of ref
6、erence 1 2. APPLICABLE DOCUMENTS 2 2.1 General . 2 2.2 Government documents 2 2.2.1 Specifications, standards, and handbooks 2 2.3 Non-Government publications . 2 2.4 Order of precedence . 3 3. DEFINITIONS . 3 3.1 Abbreviations, symbols, and definitions 3 3.2 Acronyms used in this standard 3 4. GENE
7、RAL REQUIREMENTS . 4 4.1 General . 4 4.2 Test circuits . 4 4.3 Laboratory suitability . 4 5. DETAILED REQUIREMENTS . 4 6. NOTES . 4 6.1 Intended use . 4 6.2 International standardization agreement . 4 6.3 Subject term (key word) listing 4 6.4 Supersession data. 4 FIGURE TITLE 50021 Diagram of equipm
8、ent set-up for measuring relationship of metal-insulator-semiconductor structures 50022 Capacitancevoltage traces 50023 Mobile ion density versus voltage shift (VFB) TEST METHOD NO. TITLE 5001.2 Wafer lot acceptance testing 5002 Capacitance voltage measurements to determine oxide quality 5010.1 Clea
9、n room and workstation airborne particle classification and measurement Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 iv This page intentionally left blank. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic
10、ense from IHS-,-,-MILSTD7505 1 1. SCOPE 1.1 Purpose. Part 5 of this test method standard establishes uniform test methods for the basic high reliability space application testing of semiconductor devices to determine resistance to deleterious effects of natural elements and conditions surrounding mi
11、litary operations. For the purpose of this standard, the term “devices“ includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This part of a multipart test method standard is intended to apply only to semiconductor devices. 1.2 Numbering
12、system. The test methods are designated by numbers assigned in accordance with the following system: 1.2.1 Classification of tests. The high reliability space application test methods included in this part are numbered 5000 to 5999 inclusive. 1.2.2 Test method revisions. Revisions are numbered conse
13、cutively using a period to separate the test method number and the revision number. For example, 5001.2 designates the second revision of test method 5001. 1.3 Method of reference. When applicable, test methods contained herein shall be referenced in the individual specification or specification she
14、et by specifying the test method number of this test method standard, and the details required in the summary of the applicable method shall be listed. To avoid the necessity for changing documents that refer to the test methods of this standard, the revision number should not be used when referenci
15、ng test methods. (For example: Use 5001 versus 5001.2.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, 5, and the individual test
16、methods of this standard. This section does not include documents cited in other sections of this standard or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specifie
17、d requirements documents cited in sections 3, 4, 5 and the individual test methods of this standard, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the ex
18、tent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods For Semiconducto
19、r Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Non-Government publications. The following documents
20、form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASME INTERNATIONAL (ASME) ASME Y14.38 Abbreviations and Acronyms for Use on Drawings and Related Documents. (Copies of these documen
21、ts are available online at http:/www.asme.org or from ASME International, Three Park Avenue, New York, NY 100165990.) ASTM INTERNATIONAL (ASTM) ASTM F25 Standard Test Method for Sizing and Counting Airborne Particulate Contamination in Cleanrooms and Other Dust-Controlled Areas. ASTM F50 Standard Pr
22、actice for Continuous Sizing and Counting of Airborne Particles in Dust-Controlled Areas and Clean Rooms Using Instruments Capable of Detecting Single Sub-Micrometre and Larger Particles. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbo
23、r Drive, P.O. Box C700, West Conshohocken, PA 194282959.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 3 INTERNATIONAL ORGANIZATION FOR STANDARDIZATION (ISO) ISO 146441 Cleanrooms and Associated Controlled Environments Part 1: Classific
24、ation of Air Cleanliness. ISO 146442 Cleanrooms and Associated Controlled Environments Part 2: Specifications for Testing and Monitoring to Prove Continued Compliance with ISO 146441. (Copies of these documents are available online at http:/www.iso.ch or from the International Organization for Stand
25、ardization American National Standards Institute, 11 West 42ndStreet, 13thFloor, New York, NY 10036.) SAE INTERNATIONAL (SAE) SAE ARP743 Procedure for the Determination of Particulate Contamination of Air in Dust Controlled Spaces by the Manual Particle Count Method. (Copies of these documents are a
26、vailable from SAE International, 400 Commonwealth Drive, Warrendale, PA 150960001, Tel: 8776067323 (inside USA and Canada) or 7247764970 of these documents (outside USA), http:/www.sae.org.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between
27、 the text of this document and the references cited herein (except for related applicable specification sheet, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. DEFINITIONS 3.1 A
28、bbreviations, symbols, and definitions. For the purposes of this part of the test method standard, the acronyms, symbols, and definitions specified in MILPRF19500, ASME Y14.38, and herein shall apply. 3.2 Acronyms used in this standard. Acronyms used in this part of the test method standard are defi
29、ned as follows: a. Angstrom. is a unit of length equal to 1 x 10-10meters. b. C/V Capacitancevoltage. c. DVM Digital voltmeter. d. MOS Metal oxide semiconductor e. ns Nanosecond. f. pF Picofarad. g. P-N p-n junction h. ppmv Parts per million volume i. RF Radio frequency. j. RH Relative humidity. k.
30、VFB Forward bias voltrage. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 4 4. GENERAL REQUIREMENTS 4.1 General. Unless otherwise specified in the individual test method, the general requirements of MILSTD750 shall apply. 4.2 Test circuit
31、s. The test circuits shown in the test methods of this test method standard are given as examples which may be used for the measurements. They are not necessarily the only test circuits which can be used; however the manufacturer shall demonstrate to the Government that other test circuits which the
32、y may desire to use will give results within the desired accuracy of measurement. Circuits are shown for PNP transistors in one circuit configuration only. They may readily be adapted for NPN devices and for other circuit configurations. 4.3 Laboratory suitability. Prior to processing any semiconduc
33、tor devices intended for use in any military system or sub-system, the facility performing the test(s) shall be audited by the DLA Land and Maritime, Sourcing and Qualification Division and be granted written Laboratory Suitability status for each test method to be employed. Processing of any device
34、s by any facility without Laboratory Suitability status for the test methods used shall render the processed devices nonconforming. 5. DETAILED REQUIREMENTS This section is not applicable to this standard. 6. NOTES (This section contains information of a general or explanatory nature that may be hel
35、pful, but is not mandatory.) 6.1 Intended use. The intended use of this test method standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This test method standard has been prepared to
36、 provide uniform test methods, controls, and procedures for determining with predictability the suitability of such devices within military, aerospace and special application equipment. 6.2 International standardization agreement. Certain provisions of this test method standard are the subject of in
37、ternational standardization agreement. When amendment, revision, or cancellation of this test method standard is proposed which will affect or violate the international agreement concerned, the preparing activity will take appropriate reconciliation action through international standardization chann
38、els, including departmental standardization offices, if required. 6.3 Subject term (key word) listing. Airborne particle classification Capacitance voltage measurements High reliability tests Laboratory suitability 6.4 Supersession data. The main body and five parts (1 through 5) of this revision of
39、 MILSTD750 replace superseded MILSTD750E. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 METHOD 5001.2 1 of 1 METHOD 5001.2 WAFER LOT ACCEPTANCE TESTING The content of this test method has been transferred to MILPRF19500, appendix D. Prov
40、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 This page intentionally left blank. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7505 METHOD 5002 1 of 5 METHOD 5002 CAPACITANCE VOLTAGE
41、 MEASUREMENTS TO DETERMINE OXIDE QUALITY 1. Purpose. The purpose of this test method is to determine the quality of an oxide layer as indicated by capacitance-voltage (C/V) measurements of a metal-oxide semiconductor capacitor. The overall shape and position of the initial C/V curve can be interpret
42、ed in terms of the charge density, and to a certain extent charge type, at the oxide-semiconductor interface. By applying an appropriate bias while heating the sample to a moderate temperature (e.g., +200C), the mobile ion contamination level of the sample oxide may be determined. 2. Apparatus/mater
43、ials. Capacitance-voltage plotting system complete with heated/cooled stage and probe (Princeton Applied Research Model 410, MSI Electronics Model 868 or equivalent). A C/V plotter may be constructed from the following components (see figure 50021 for equipment setup). 2.1 Manual setup. a. L-C meter
44、 (Boonton 72B or equivalent). b. X-Y recorder (HP 7035B or equivalent). c. DC voltmeter (Systron Donner 7050 or equivalent). d. DC power supply, 0 to 100 volts. e. Heated/cooled stage (Thermochuck TP-36 or equivalent). f. Probe in micromanipulator. 2.2 Automatic C/V plotter. (CSM-16 or equivalent).
45、3. Suggested procedure. 3.1 Sample preparation. a. The sample is typically a silicon wafer on which has been grown the oxide to be measured, or wafers with known clean oxide which is exposed to a furnace at temperature to measure the furnace cleanliness. An array of metal dots on the surface of the
46、oxide provides the top electrodes of the metal-oxide semiconductor capacitors. The metal may either have been deposited through a shadow mask to form the dots, or it may have been deposited uniformly over the oxide surface and then etched into the dot pattern by photolithographic techniques. Cleanli
47、ness of the metal deposition is paramount. Contamination introduced during metal deposition is as catastrophic to the oxide quality as is contamination introduced during oxide growth. The metal shall have been annealed, except in cases where the method is being used to investigate the effectiveness
48、of annealing. NOTE: This method test also may be used to determine metal deposition system cleanliness when used with oxide samples known to be contamination free. b. The minimum dot size should be such that the capacitance of the MOS capacitor is greater than 20 pF. c. The oxide thickness is typically 1,100 . Reduced sensitivity results from oxide thickness greater than 2,000 . d. The backside of the sample shall have the oxide removed to ex
