1、 INCH-POUND MIL-M-38510/209G 13 September 2013 SUPERSEDING MIL-M-38510/209F 15 April 2013 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the
2、Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zap
3、ped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the re
4、quirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit Access time (ns) 01 2048 word / 4 bits per
5、word PROM with uncommitted collector 125 02, 08, 10 2048 word / 4 bits per word PROM with active pullup and a third high-impedance state output 125, 90, 55 03 1024 word / 8 bits per word PROM with uncommitted collector 90 04, 09 1024 word / 8 bits per word PROM with active pullup and a third high-im
6、pedance state output 90, 55 05 1024 word / 8 bits per word PROM with active pullup and a third high-impedance state output 90 06 1024 word / 8 bits per word PROM with uncommitted collector 90 NOTE: Device type 07 was deleted from this document under revision D. 1.2.2 Device class. The device class i
7、s the product assurance level as defined in MIL-PRF-38535. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memorydla.mil. Since contact info
8、rmation can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil AMSC N/A FSC 5962 Inactive for new design after 24 July 1995 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
9、-MIL-M-38510/209G 2 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack V GDIP1-T18 or CDIP2-T18 18 Dual-in-line X See fig
10、ure 1 18 Flat pack Y GDFP2-F18 18 Flat pack 1.3 Absolute maximum ratings. Supply voltage range -0.5 V to +7.0 V Input voltage range . -1.5 V at -10 mA to +5.5 V Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction to case (JC) : Cases
11、J, K, V, and Y . See MIL-STD-1835 1/ Case X 35C/W maximum 1/ Output voltage . -0.5 V to +VCCOutput sink current 100 mA Maximum power dissipation (PD) : Device types 01, 02, 08, and 10 950 mW 2/ Device types 03, 04, 05, 06, and 09 1.1 W 2/ Maximum junction temperature (TJ) +175C 1.4 Recommended opera
12、ting conditions. Supply voltage range +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH) . 2.0 V Maximum low-level input voltage (VIL) 0.8 V Normalized fanout (each output) : Device types 01, 02, 08, and 10 . 12 mA 3/ Device types 03, 04, 05, 06, and 09 . 8 mA 3/ Case oper
13、ating temperature range (TC) -55 C to +125 C _ 1/ Heat sinking is recommended to reduce the junction temperature. 2/ Must withstand the added PDdue to short circuit test (e.g. IOS). 3/ 16 mA for circuits B, D, and F devices. Provided by IHSNot for ResaleNo reproduction or networking permitted withou
14、t license from IHS-,-,-MIL-M-38510/209G 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional informat
15、ion or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 S
16、pecifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - In
17、tegrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outline (Copies of these documents are available online at http:/quicksearc
18、h.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except fo
19、r related specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be produ
20、cts that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified her
21、ein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
22、MIL-PRF-38535 and herein. 3.3.1 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3.2 Truth table. 3.3.2.1 Unprogrammed devices. The truth tables for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 3. When require
23、d in groups A, B, or C inspection (see 4.4), the devices shall be programmed by the manufacturer prior to test in a checkerboard pattern (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of b
24、its programmed. 3.3.2.2 Programmed devices. The truth table for programmed devices shall be as specified by the altered item drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 4 3.3.3 Functional block diagram. The functional bl
25、ock diagram shall be as specified on figure 4. 3.3.4 Case outlines. The case outlines shall be as specified in 1.2.3. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance
26、 characteristics are as specified in table I, and apply over the full recommended case operating temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table II, and where applicable, the altered item drawing. The el
27、ectrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. For programmed devices, the altered item drawing number shall be added to the marking by the programming activity. 3.8 Processing options. Since the PROM is an unprogrammed de
28、vice capable of being programmed by either the manufacturer or the user to result in a wide variety of PROM configurations, two processing options are provided for selection in the contract, using an altered item drawing. 3.8.1 Unprogrammed PROM delivered to the user. All testing shall be verified t
29、hrough group A testing as defined in 3.3.2.1, table II, and table III. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 3.8.2 Manufacturer-programmed PROM delivered to the user. All testing requirements and quality assurance provi
30、sions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 14 (see Appendix A, MIL-PRF-38535.) Provided by IHSNot fo
31、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C unless other wise specified Device type Limits Units Min Max High-level output voltage VOHVCC= 4.5 V, IOH = -2 mA,
32、VIL= 0.8 V, VIH= 2.0 V 02, 04, 05, 08, 09, 10 2.4 V Low-level output voltage 2/ VOLVCC= 4.5 V, IOL = 12 mA, VIL= 0.8 V, VIH= 2.0 V 01, 02, 08, 10 0.5 V VCC= 4.5 V, IOL = 8 mA 03, 04, 05, 06, 09 0.5 Input clamp voltage VICVCC = 4.5 V, IIN= -10 mA, TC = +25C All -1.5 V Maximum collector cut-off curren
33、t ICEXVCC = 5.5 V, VO = 5.2 V 01, 03, 06 100 A High impedance (off-state) output high current IOHZVCC = 5.5 V, VO = 5.2 V 02, 04, 05, 08, 09, 10 100 A High impedance (off-state) output low current IOLZVCC = 5.5 V, VO = 0.5 V 02, 04, 05, 08, 09, 10 -100 A High level input current IIH1VCC = 5.5 V, VIN
34、 = 5.5 V All 50 A IIH2VCC = 5.5 V, VIN = 4.5 V , special programming pin 03, 04, 06, 09 100 Low level input current IILVCC = 5.5 V, VIN = 0.5 V All -1.0 -250 A Short circuit output current IOSVCC = 5.5 V, VO= 0.0 V, 3/ VIH= 2.0 V, VIL= 0.8 V 02, 04, 05, 08, 09, 10 -15 -100 mA Supply current ICCVCC =
35、 5.5 V, VIN = 0 V, outputs = open 01, 02 170 mA 03, 04, 05, 06, 08, 09, 10 185 Propagation delay time, high to low level logic, address to output tPHL1 VCC= 4.5 V and 5.5 V, CL= 30 pF, see figure 6 08 90 ns 01, 02 125 03, 04, 05, 06 90 09, 10 55 See footnotes at end of table. Provided by IHSNot for
36、ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 6 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TC +125C unless other wise specified Device type Limits Units Min Max Propagation delay time, low to high level logi
37、c, address to output tPLH1VCC= 4.5 V and 5.5 V, CL= 30 pF, see figure 6 08 90 ns 01, 02 125 03, 04, 05, 06 90 09, 10 55 Propagation delay time, high to low level logic, enable to output tPHL2 VCC= 4.5 V and 5.5 V, CL= 30 pF, see figure 6 08 50 ns 01, 02 60 03, 04, 05, 06 50 09, 10 30 Propagation del
38、ay time, low to high level logic, enable to output tPLH2VCC= 4.5 V and 5.5 V, CL= 30 pF, see figure 6 08 50 ns 01, 02 60 03, 04, 05, 06 50 09, 10 30 1/ Complete terminal conditions shall be specified In table III. 2/ IOL= 16 mA for circuits B, D, and F devices. 3/ Not more than one output shall be g
39、rounded at one time. Output shall be at high logic level prior to test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 7 FIGURE 1. Case outline X. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
40、from IHS-,-,-MIL-M-38510/209G 8 Symbol Inches Millimeters Notes Min Max Min Max A .045 .085 1.14 2.16 b .015 .020 .38 .51 5 C .003 .006 .08 .15 5 D .340 .380 8.64 9.65 E .340 .380 8.64 9.65 E1.400 10.16 3 E2.260 .290 6.60 7.37 E3.025 .63 e .050 BSC 1.27 BSC 4, 6 K .008 .015 .20 .38 9 L .250 .330 6.3
41、5 8.38 Q .010 .040 .25 1.02 2 S1.005 .13 7, 8 S2.004 .10 10 30 90 30 90 NOTES: 1. Index area; a tab (dim K) may be used to identify pin one. This tab may be located on either side as shown. 2. Dimension Q shall be measured at the point of exit of the lead from the body. 3. This dimension allows for
42、off-center lid, meniscus and glass overrun. 4. The basic pin spacing is .050 (1.27 mm) between centerlines. Each pin centerline shall be located within .005 (0.13 mm) of its exact longitudinal position relative to pins relative to pins 1 and 18. 5. All leads increase limit by .003 (0.08 mm) measured
43、 at the center of the flat, when lead finish A is applied. 6. Sixteen spaces. 7. Applies to all four corners (leads number 2, 8, 11, and 17). 8. Dimension S1may be .000 (0.00 mm) if leads are brazed to the metallized ceramic body (see MIL-STD-1835). 9. Optional, see note 1. If a pin one identificati
44、on mark is used in addition to this tab, the minimum limit of dimension K does not apply. 10. Applies to leads number 1, 9, 10, and 18. FIGURE 1. Case outline X Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 9 Device type
45、s 01, 02, 08, and 10 03, 04, and 09 Case outlines V J and K Terminal number Terminal symbol 1 A6A72 A5A63 A4A54 A3A45 A0A36 A1A27 A2A18 A10A09 GND O110 CE1O211 O4O312 O3GND 13 O2O414 O1O515 A9O616 A8O717 A7O818 VCCCE419 - CE320 - CE221 - CE122 - A923 - A824 - VCCFIGURE 2. Terminal connections. Provi
46、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G 10 Device types 05 and 06 01, 02, and 08 02 and 10 Case outlines J and K X Y Terminal number Terminal symbol 1 A7A6A62 A6A5A53 A5A4A44 A4A3A35 A3A0A06 A2A1A17 A1A2A28 A0A10A109 O1GND GND 10
47、O2CE1CE111 O3O4O412 GND O3O313 O4O2O214 O5O1O115 O6A9A916 O7A8A817 O8A7A718 NC VCCVCC19 NC - - 20 CE - - 21 NC - - 22 A9- - 23 A8- - 24 VCC- - FIGURE 2. Terminal connections Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/209G
48、11 Device types 01, 02, 08, and 10 ( see notes 1, 2, and 3 ) Word Enable Address number CE1A10A9A8A7A6A5A4A3A2A1A0NA L X X X X X X X X X X X NA H X X X X X X X X X X X Word Data number O1O2O3O4NA See note 5 NA OC OC OC OC Device types 05 and 06 ( see notes 1, 2, and 3 ) Word Enable Address number CE1A9A8A7A6A5A4A3A2A1A0NA L X X X X X X X X X X NA H X X X X X X X X X X Word Data number O1O2O3O4O5O6O7O8NA See note 5 NA OC OC OC OC OC OC OC OC FIGURE 3. Tru
