1、MIL-PRF-19500/144P 19 October 2012 SUPERSEDING MIL-PRF-19500/144N w/AMENDMENT 2 1 October 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064, 1N4532, JAN, JANTX, JANTXV, JANHC, AND JA
2、NKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements
3、 for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figures 1 (axial), 2 (DO-213AA), 3 (UB), and 4 (JANHCA and JANKCA). 1.3 Maximum ratings. Unless otherwise specified TA = +25C. T
4、ype VBRVRWMIO(PCB)TA= 75C (1) (2) IFSM8.3ms TJpads for (UR) = .061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included,
5、 is measured at IO= 200 mA dc. (3) See figures 7, 8, and 9 for thermal impedance curves. (4) RJSPrefers to thermal resistance from junction to the solder pads of the UB package. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Ma
6、ritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . Device types 1N3064 and 1N4532 are inactive
7、 for new design (see 6.4). The documentation and process conversion measures necessary to comply with this document shall be completed by 19 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 2 * 1.4 Primary electrical c
8、haracteristics at TA= +25C, unless otherwise specified. Limits (1) VF1IF= 10 mA dc IR1VR= 50 V dc COVR= 0 f = 1 MHz trrIF= IR= 10 mA dc RL= 100 tfrVfr= 5.0 V(pk) IF= 100 mA dc Max 0.8 V dc 0.1 A dc 2 pF 4.0 ns 30 ns (1) Primary electrical characteristics for surface mount devices are equivalent to t
9、he corresponding non-surface mount devices unless otherwise specified. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recomm
10、ended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2
11、Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTM
12、ENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil or from
13、 the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document
14、takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 3 Types Symbol Dimensions Inches Millime
15、ters Min Max Min Max 1N4454-1 (DO-35) BD .056 .075 1.42 1.91 BL .140 .180 3.56 4.57 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 1N3064 (DO-7) BD .078 .107 1.98 2.72 BL .195 .300 4.96 7.62 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 1N4532 (DO-34) BD .050 .075 1.27 1.91 BL .080 .120 2.03
16、3.05 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Types 1N4454-1, 1N3064, 1N4532. FIGURE 1. Physical dimensions. Provided by IHS
17、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.70 ECT .016 .022 0.41 0.55 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimeters ar
18、e given for general information only. 3. Dimensions are pre-solder dip. 4. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for type 1N4454UR-
19、1 (DO-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 5 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .1
20、15 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Ceramic p
21、ackage only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions, surface mount (UB version). 1N4454UBCA 1N4454UBD 1N4454UB 1N4454UBCC UB 2 1 Provided b
22、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 6 Ltr Dimensions Inches Millimeters Min Max Min Max A .014 .018 .360 .460 B .005 .007 .120 .180 C .008 .012 0.20 0.30 NOTES: 1. Dimensions are in inches. Millimeters are given for general infor
23、mation only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al Back (cathode): Au Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thickness: .010 inches (0.25 mm) .002 inches (0.05 mm). * FIGURE
24、 4. Physical dimensions, JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qual
25、ification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions.
26、 Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJBBThermal resistance junction to burn-in board. SP Solder pad on UB devices. UB Hermetic unleaded 3 terminal leadless chip carrier (LCC) package type. UR Unleaded round package type designat
27、ion. VfrForward recovery voltage. Specified maximum forward voltage used to determine forward recovery time. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads), 2 (DO-213AA), 3 (UB), and 4. 3.4.1 Lead fini
28、sh. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded, double plug
29、 construction in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to achieve axial thermal compensatio
30、n. Dimensional tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessi
31、ve stresses due to the inherent CTE mismatch. The UB devices shall be eutectically mounted and wire bonded in a ceramic package. The UR version shall be structurally identical to the axial leaded versions except for end-cap lead attachment. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19
32、500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, and JANTXV may be abbreviated
33、 as J, JX, and JV, respectively. The part number may be reduced to J4454, JX4454, or JV4454. No color coding shall be permitted for part numbering. 3.5.1 UR devices. For UR version devices only, all marking, except polarity, may be omitted from the body, but shall be retained on the initial containe
34、r. Polarity marking of UR devices shall consist as a minimum, a band or three contrasting dots around the periphery of the cathode. 3.5.2 UB devices. UB devices do not require polarity marking. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
35、characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other d
36、efects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 8 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follow
37、s: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspec
38、tion shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the
39、tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified here
40、in. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screening (see table E-IV of MIL-PRF-19500) JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.3) 9 Not required 10 Method 1038 of MI
41、L-STD-750, condition A (2) 11 IR1and VF112 See 4.3.2 (3) (4) 13 Subgroup 2 of table I herein; IR1= 100 percent of initial value or 25 nA dc, whichever is greater; VF1= 25 mV dc. 14a (5) 14b Not applicable Required (1) Thermal impedance shall be performed any time after sealing provided temperature c
42、ycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Test within 24 hours after removal from test. (3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. (4) PDA 5 percent. (5) For clear glass diodes, the
43、hermetic seal (gross leak) test may be performed any time after temperature cycling, fine and gross leak required for UB package. * 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in
44、duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/144P 9 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2): Me
45、thod 1038 of MIL-STD-750, condition B. VR= rated VRWM; f = 50 - 60 Hz; IO(min)= IF= IO(PCB). TA= 75C maximum. The maximum current density of small die shall be submitted to the qualifying activity for approval. With approval of the qualifying activity and preparing activity, alternate burn-in criter
46、ia (hours, bias conditions, mounting conditions, etc.) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3
47、 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IHand IM. tMDshall be 70 s maximum, tHshall be 10 ms maximum. The thermal impedance limit s
48、hall comply with the thermal impedance graphs on figures 6, 7 and 8 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein. 4.3.4 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level requirements. Electrical testing shall be in accordance with table I, subgroup 2 herein. 4.4 Conform
