1、 MIL-PRF-19500/198E 25 March 2008 SUPERSEDING MIL-PRF-19500/198D 4 September 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS, TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A, JAN This specification is approved for use by all Departments and Agencies of the Department of Defense. T
2、he requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon thyristors. One level of product assurance is provided for each device type as specified in M
3、IL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (TO-5). 1.3 Maximum ratings. (1) IOTA= +100C if (surge) VGVCGIGiGOperating and storage temperature Operating altitude mA dc 220 a 15 V dc 5 mA dc 25 ma 250 C -65 to +150 mm Hg 15 VRM(2) VFBXM(2) Type V(pk) V(pk) 2N1870A 2N1871A 2N1872A 2N1874A 30
4、 60 100 200 30 60 100 200 (1) For additional information on ratings see figures 2 and 3. (2) Blocking voltage ratings apply with gate connected through a resistor, R2= 1 k or less, to cathode as shown on figure 4. INCH-POUND Inactive for new design after 4 September 2007. Comments, suggestions, or q
5、uestions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST O
6、nline database at http:/assist.daps.dla.mil . AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 2 1.4 Primary electrical characteristics. Limits Vfif= 2A IHVGTVAC= 5 V Re= 1 k IGTVAC= 5 V Re 1 k Min Max V 2.5 mA dc
7、0.3 5.0 V dc 0.4 0.8 A dc 200 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as ex
8、amples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specification
9、s, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-195
10、00 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Ord
11、er Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and
12、 regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufact
13、urer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 3 Dimensions Inches Millimeters Sy
14、mbol Min Max Min Max Note CD .305 .335 7.75 8.51 CH .200 .260 5.08 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP LD .016 .019 0.41 0.48 3, 7 * LL 1.500 1.750 38.1 44.45 3 LU .016 .019 0.41 0.48 7 L1.050 1.27 7 L2.250 6.35 7 P .100 2.54 6 Q .030 0.76 8, 10 TL .029 .045 0.74 1.14 11 TW .028 .034 0.71
15、 0.86 11 r .010 0.25 11, 12 45 TP 45 TP TO-5 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. All terminals are electrically insulated from the case. 4. Leads may be soldered to within .063 inch (1.60 mm) of base. Heat sinking not required if temperature-t
16、ime exposure is less than 230C for 10 seconds. 5. This device is for socketed single-sided circuit-board, wire-in, and similar applications. Where used in double sided or eyeletted circuit-board, or similar applications where solder bridging may occur, a dielectric washer or other standoff device ma
17、y be necessary. 6. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010 inch (0.25 mm). 7. The specified lead diameter applies in the zone between .050 (1.27 mm) and .250 inch (6.35 mm) from the base seat. Between .250 inch (6.35 mm)
18、 and 1.5 (38.1 mm) a maximum of .021 inch (0.533 mm) diameter is held. Outside of these zones the lead diameter is not controlled. 8. Body contour optional within zone defined by Q. 9. Lead 1 = cathode, lead 2 = gate, lead 3 = anode. 10. Details of outline in this zone are optional. 11. Tab is optio
19、nal. 12. Dimension r (radius) applies to both inside corners of tab. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions of semiconductor types 2N1870A, 2N1871A, 2N1872A and 2N1874A (TO-5). Provided by IHSNot for ResaleNo reproduction or netwo
20、rking permitted without license from IHS-,-,-MIL-PRF-19500/198E 4 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500, and as follows: IFBXDC forward blocking current with resistor R2across gate and cathode. IRBXDC r
21、everse blocking current with resistor R2across gate and cathode. iGPeak gate current. VAAAnode power supply voltage (dc). VCGReverse gate voltage. VFBXForward anode voltage. VGRated reverse gate voltage. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified i
22、n MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-
23、PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
24、 as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will af
25、fect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Conformance inspection (see 4.3). 4.2 Qualification inspection. Qualification inspection shal
26、l be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, table I
27、herein, and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIb (JAN) of MIL-PRF-19500 and 4.3
28、.2.1 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 5 4.3.2.1 Group B inspection, table VIb (JAN) of MIL-PRF-19500. Subgroup Method Cond
29、ition B3 1040 Operational life, see 4.6, test circuit on figure 6, TA= +100C. B6 1031 TA= +150C. 4.3.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (
30、end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Lead fatigue. C6 1031 TA= +150C. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measu
31、rement shall be as specified in section 4 of MIL-STD-750. 4.5 Holding current. The holding current is measured by decreasing the anode current to the point where the device under test switches from the on-state to the off-state. The gate current shall be -150 A and the anode supply voltage shall be
32、5 volts. The test circuit shown on figure 5, or its equivalent, may be used. Resistor R4is increased, thereby decreasing device anode current, until the device switches to the off-state. The current measured by M1immediately prior to switching is the holding current. Switch S1is used to trigger the
33、device to the on-state prior to making a holding current measurement. 4.6 Operational life test. The operational life test shall be performed in the test circuit shown on figure 6, or its equivalent. Transformer T1is adjusted such that the peak value of secondary voltage from T3equals the rated forw
34、ard blocking voltage of the device under test. Transformer T2is adjusted such that meter reads 220 mA average rectified current. Transformer T5is selected to provide a maximum secondary peak voltage of 5 volts as read on meter M3. The device under test shall be in an oven at an ambient temperature o
35、f +100 5C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 6 TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Forward b
36、locking current 4206 DC method, bias condition B; R2= 1,000 , .25 watt IFBX10 A dc 2N1870A VFBX= 30 2N1871A VFBX= 60 2N1872A VFBX= 100 2N1874A VFBX= 200 Reverse blocking current 4211 DC method, bias condition B; R2= 1,000 , .25 watt IRBX10 A dc 2N1870A VFBX= 30 2N1871A VFBX= 60 2N1872A VFBX= 100 2N1
37、874A VFBX= 200 Gate trigger current 4221 V2= VFBX= 5 V dc Re= 1,000 ; RL= 100 ; IGT200 A dc Gate trigger voltage 4221 V2= VFBX= 5 V dc Re= 1,000 RL= 100 ; VGT0.4 0.8 V dc Forward “on” voltage 4226 IFM= 2 a(pk) (pulse); pulse width = 8.5 ms; maximum; duty cycle = 2 percent maximum Vf2.5 V dc Exponent
38、ial rate of voltage rise 4231 Bias condition B; repetition rate = 60 pps; 50 RL 400 ; C = .001 F min; test duration = 15 sec; R3= 1,000 VFBX2N1870A dv/dt = 100 V/s; VAA= 30 V dc 25 2N1871A dv/dt = 60 V/s; VAA= 60 V dc 55 2N1872A dv/dt = 40 V/s; VAA= 100 V dc 95 2N1874A dv/dt = 30 V/s; VAA= 200 V dc
39、190 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 7 TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 2 - Continued Reverse gate
40、 current 4219 VCG= 5 V dc, anode open IKG10 A dc Holding current 4201 IG= -150 A dc, VAA= 5 V dc IH0.3 5 mA dc Subgroup 3 High temperature operation: 4206 TA= +125C Forward blocking current 4206 R2= 1,000 ohms IFBX100 A dc 2N1870A VFBX= 30 2N1871A VFBX= 60 2N1872A VFBX= 100 2N1874A VFBX= 200 Reverse
41、 blocking current 4211 R2= 1,000 ohms IRBX100 A dc 2N1870A VFBX= 30 2N1871A VFBX= 60 2N1872A VFBX= 100 2N1874A VFBX= 200 Gate trigger voltage 4221 V2= VFBX= 5 V, Re= 1,000 RL= 100 VGT0.2 V dc Holding current 4201 IG= -150 A dc, VAA= 5 V dc IH0.2 mA dc Low temperature operation: TA= -65C Gate trigger
42、 voltage 4221 V2= VFBX= 5 V Re= 1,000 RL= 100 VGT1.0 V dc Gate trigger current 4221 V2= VFBX= 5 V, Re= 1,000 RL= 100 IGT500 A dc Holding current 4201 IG= -150 A dc, VAA= 5 V dc IH15 mA dc See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen
43、se from IHS-,-,-MIL-PRF-19500/198E 8 TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroups 4 and 5 Not applicable Subgroup 6 Surge current 4066 IF= 15 A(pk) (.5 sine wave); Ten surges per minute; IO= 250 mA dc at rated VRRM; TC= +65
44、C; f = 60 Hz; surge duration = 7 ms, minimum. Electrical measurements See table I, group A, subgroup 2 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 9 NOTE: Ratings apply for 50 to 400 Hz
45、frequency. FIGURE 2. Anode current rating as a function of operating case temperature. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 10 FIGURE 3. Anode current rating as a function of operating ambient temperature. FIGURE 4. Cond
46、ition for blocking voltage rating. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 11 M1DC milliammeter R140 k, 1/4 watt S1Trigger on switch, momentary type, R24,700 , 1/4 watt normally open R3270 , 1/4 watt D11N457 diode R425 k po
47、tentiometer FIGURE 5. Test circuit for holding current. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/198E 12 T1 115 VAC adjustable transformer R2 20 , 20 watt T2 115 VAC adjustable transformer R3 1,000 , 1/4 watt T3 Step up transform
48、er 115 VAC to 140 VAC M1 Peak reading voltmeter or RMS equivalent (0 - 250 T4 Step down transformer 115 VAC to 12 VAC volts) T5 Step down transformer 115 VAC to 3.0 VAC M2 DC millimeter 0 - 300 mA D1, D2 1N540 M3 Peak reading voltmeter or RMS equivalent (0 - 10 R1 20 k, 1/2 watt volts) FIGURE 6. Operational life test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500
