1、 MIL-PRF-19500/246K 20 July 2012 SUPERSEDING MIL-PRF-19500/246J w/AMENDMENT 1 8 March 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N3289, 1N3291, 1N3293, 1N3294, 1N3295, AND R TYPES, JAN, JANTX, AND JANTXV This specification is approved for use b
2、y all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon power rectifiers. Three levels
3、of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Normal and reverse types (reverse types, suffix R). Reverse and normal types are identical except the normal types have the cathode connected to the stud and the reverse types have the anode connected to the st
4、ud. Designated values are applicable to both types. 1.3 Physical dimensions. See figure 1 (DO-205AA - formerly DO-8). 1.4 Ratings and characteristics. Type VRSMVRWMIO TC= 150C IOTC= 134C (1) IFSM1/120 s Barometric pressure (reduced) TJand TSTG1N3289, R 1N3291, R 1N3293, R 1N3294, R 1N3295, R V (pk)
5、240 480 720 960 1,200 V (pk) 200 400 600 800 1,000 A dc 75 75 75 75 75 A dc 100 100 100 100 100 A (pk) 1,600 1,600 1,600 1,600 1,600 mm Hg 8 16 30 54 C -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 (1) Derate linearly 1.5 A dc/C for TC 134C. 1.5 Thermal resistance characteristic: RJC=
6、0.4C/W, see figure 2. AMSC N/A FSC 5961 INCH POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify
7、the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted wi
8、thout license from IHS-,-,-MIL-PRF-19500/246K 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional in
9、formation or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2
10、.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFIC
11、ATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization D
12、ocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Noth
13、ing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specif
14、ication shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used
15、herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (DO-205AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, and as specified
16、herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.6 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end or the use of other
17、 techniques considered commercial practice. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .625 1.000 15.88 25.40 8 CD1.500 12.70 CH 1.750 44.45 CH11.140 28.96 c .050
18、 .120 1.27 3.05 FL .300 .450 7.62 11.43 6 FW .670 17.02 HF 1.031 1.063 26.19 27.00 HT .125 .500 3.18 12.70 5 OAL 4.300 5.065 109.22 128.65 SD 4 SL .605 .645 15.37 16.38 UD .343 .373 8.71 9.47 t .250 .310 6.35 7.87 4 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general
19、information only. 3. Complete threads to extend to within 2.5 threads of seating plane. 4. 375-24 UNF-2A. Maximum pitch diameter of plated threads shall be basic pitch diameter (.3479 inch (8.837 mm) reference. 5. A chamfer or undercut on one or both ends of hexagonal portions is optional. 6. Minimu
20、m flat. 7. For marking (see 3.5). 8. The body of the device, with the exception of the hexagon and flexible lead extensions, lies within cyclinder defined by CD1and CH, CD1not to exceed actual HF. 9. Terminal shape is optional. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbol
21、ogy. FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 4 * 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1
22、.4, 1.5, and table I. * 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceabili
23、ty, or appearance. 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection sha
24、ll be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II test
25、s, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-195
26、00, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screening (see appendix E, table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels 1 Method 2073 of MIL-STD-750
27、may be used in lieu of method 2074 for compression bonded devices only. 3c Thermal impedance (see 4.3.1) and figure 2. 4 5,000 G; performed prior to installation of external lead. 10 Not applicable. 11 IRM1and VFMof subgroup 2 of table I herein. 12 Method 1038, condition A; VRM= VRWMrated (see 1.4),
28、 TC= 150C; f = 60 Hz. 13 Subgroup 2 of table I herein: IRM1= 0.5 mA (pk) or 100 percent of initial value, whichever is greater. VFM= 0.1 V (pk). 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that m
29、ethod for determining IM, IH, tH, tSW, (and VH where appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 and figure 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 5 4.4 Conformance in
30、spection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500, table I herein, and as specified herein. Electrical measurements (end-points) and delta requirements
31、shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and table III herein. Electrical
32、measurements (end-points) and delta requirements shall be in accordance with applicable steps of table III herein. 4.4.2.1 Group B inspection, appendix E, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B2 1071 Gross leak. Test condition C, step 2 or test condition D
33、. B3 1048 Blocking life. TC= +150C, -10, +0; VRWM= VRM(see 1.4); t = 340 hours. B3 1037 See 4.5.1, T = 85C minimum; IO= 75 A, 5,000 cycles. (Separate samples may be used.) B5 3151 RJC= 0.4C/W. B6 1031 TC= +185C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the c
34、onditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta limits shall be in accordance with table III herein. 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1051 -55C to +1
35、75C, 25 cycles. C2 2036 Tension (lead): Test condition A; weight = 100 pounds; t = 15 +3 seconds. Torque (terminal): Test condition D1; 10 inch-pounds; t = 15 +3 seconds. Torque (stud): Test condition D2; 125 inch-pounds; t = 15 +3 seconds. C2 1071 Gross leak. Test condition C, step 2 or test condit
36、ion D. C5 1001 (For qualification only) (1N3291, 1N3293, 1N3294, 1N3295); t = 60 s, see 1.4 for test conditions. C6 1048 Blocking life. TC= +150C, -10, +0; VRWM= VRM(see 1.4), t = 1,000 hours 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified
37、for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH
38、S-,-,-MIL-PRF-19500/246K 6 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Power cycling. One complete test shall be as follows: First, heat the case to the maximum temperature specified by passing the specified amount of forward cur
39、rent through the diode under test. Then, remove the applied current and allow the case temperature to cool to the minimum case temperature specified. No time limit is applicable to any one cycle, but the cycling shall be continuous until the required number of cycles have been completed. Sample size
40、 = 12, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 7 * TABLE I. Group A inspection. 1/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Forw
41、ard voltage 4011 Pulse method: IFM= 310 A (pk); pulse width = 8.3 ms max; duty cycle = 2 percent max VFM11.55 V (pk) Reverse current 4016 AC method: IRM11N3289, R 1N3291, R 1N3293, R 1N3294, R 1N3295, R VRM= 200 V (pk) VRM= 400 V (pk) VRM= 600 V (pk) VRM= 800 V (pk) VRM= 1,000 V (pk) 10 10 10 10 10
42、mA (pk) mA (pk) mA (pk) mA (pk) mA (pk) Reverse current at peak reverse voltage 4016 AC method: IRM21N3289, R 1N3291, R 1N3293, R 1N3294, R 1N3295, R VRM= 240 V (pk) VRM= 480 V (pk) VRM= 720 V (pk) VRM= 960 V (pk) VRM= 1,200 V (pk) 40 40 40 40 40 mA (pk) mA (pk) mA (pk) mA (pk) mA (pk) Thermal imped
43、ance 3101 See 4.3.1 and figure 2 ZJXC/W Subgroup 3 High temperature operation: TC= +200C Reverse current 4016 AC method: IRM31N3289, R 1N3291, R 1N3293, R 1N3294, R 1N3295, R VRM= 200 V (pk) VRM= 400 V (pk) VRM= 600 V (pk) VRM= 800 V (pk) VRM= 1,000 V (pk) 30 30 30 30 30 mA (pk) mA (pk) mA (pk) mA (
44、pk) mA (pk) See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 8 * TABLE I. Group A inspection - Continued. 1/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 - Continued Lo
45、w temperature operation: TC= -65C Forward voltage 4011 Pulse method: IFM= 310 A (pk); pulse width = 8.3 ms max; duty cycle = 2 percent maximum VFM21.60 V (pk) Reverse current: 4016 AC method: IRM41N3289, R 1N3291, R 1N3293, R 1N3294, R 1N3295, R VRM= 200 V (pk) VRM= 400 V (pk) VRM= 600 V (pk) VRM= 8
46、00 V (pk) VRM= 1,000 V (pk) 40 40 40 40 40 mA (pk) mA (pk) mA (pk) mA (pk) mA (pk) Subgroups 4 and 5 Not applicable Subgroup 6 Surge current 4066 TC= +150C; IFSM= 1,600 A (pk) IO= 75 A dc; ten 1/120 s surges; 1 surge/minute VRM= VRWM (see 1.4) Electrical measurements See table III, steps 1 and 2 Sub
47、group 7 Not applicable 1/ For sample plan, see MIL-PRF-19500. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/246K 9 * TABLE II. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-75
48、0 Sampling Method Conditions plan Subgroup 1 Thermal shock 1056 100 cycles, 0C to 100C. 45 devices c = 0 Hermetic seal Electrical measurement 1071 See table I, group A, subgroup 2. Subgroup 2 Steady-state reverse bias 1038 Test condition A, 1,000 hours. 45 devices c = 0 Electrical measurement See ta
49、ble I, subgroup 2. Subgroup 4 Sample size = N/A Thermal impedance curves See MIL-PRF-19500. Subgroup 5 Barometric pressure 1001 VRWM= rated VRWM(see 1.4), pressure = rated pressure (see 1.4), t = 1 minute. 3 devices c = 0 * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-
