1、 MIL-PRF-19500/251R 12 May 2010 SUPERSEDING MIL-PRF-19500/251P 7 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, AND 2N2219AL, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, J
2、ANSG, and JANSH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance
3、requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requir
4、ements. 1.2 Physical dimensions. See figure 1 (similar to TO-39, TO-5). 1.3 Maximum ratings unless otherwise specified TA= +25C. Types PTTA= +25C (1) PTTC= +25C (1) VCBOVCEOVEBOICTSTGand TJRJCmax (2) RJAmax (2) 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL W 0.8 0.8 0.8 W 3.0 3.0 3.0 V dc 60 75
5、 75 V dc 30 50 50 V dc 5 6 6 mA dc 800 800 800 For all -65 to +200C C/W 50 50 50 C/W 195 195 195 (1) See derating curve, figures 2 and 3. (2) For thermal impedance curves, see figures 4 and 5. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to
6、Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The
7、 documentation and process conversion measures necessary to comply with this document shall be completed by 12 August 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 2 1.4 Primary electrical characteristics. Types hFEat VCE=
8、10 V dc hFE1IC= 100 A dc hFE2IC= 1.0 mA dc hFE3IC= 10 mA dc hFE4(1) IC= 150 mA dc hFE5(1) IC= 500 mA dc Min Max Min Max Min Max Min Max Min Max 2N2218 20 25 150 35 40 120 20 2N2219 35 50 325 75 100 300 30 2N2218A 30 35 150 40 40 120 20 2N2219A 50 75 325 100 100 300 30 2N2218AL 30 35 150 40 40 120 20
9、 2N2219AL 50 75 325 100 100 300 30 | hfe| CoboSwitching Types IC= 20 mA dc VCE= 20 V dc f = 100 MHz IE= 0, VCE= 10 V dc 100 kHz f 1 MHz ton toff pF ns ns Min Max Min Max Min Max Min Max 2N2218 2N2219 2.5 2.5 12.0 12.0 8 8 40 40 250 250 2N2218A 2N2219A 2.5 2.5 12.0 12.0 8 8 35 35 300 300 2N2218AL 2N2
10、219AL 2.5 2.5 12.0 12.0 8 8 35 35 300 300 Types VCE(sat)1(1) IC= 150 mA dc IB= 15 mA dc VCE(sat)2(1) IC= 500 mA dc IB= 50 mA dc VBE(sat)1(1) IC= 150 mA dc IB= 15 mA dc VBE(sat)2(1) IC= 500 mA dc IB= 50 mA dc V dc V dc V dc V dc min max min max min max min max 2N2218 2N2219 0.4 0.4 1.6 1.6 0.6 0.6 1.
11、3 1.3 2.6 2.6 2N2218A 2N2219A 0.3 0.3 1.0 1.0 0.6 0.6 1.2 1.2 2.0 2.0 2N2218AL 2N2219AL 0.3 0.3 1.0 1.0 0.6 0.6 1.2 1.2 2.0 2.0 (1) Pulsed (see 4.5.1). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 3 Dimensions Symbol Inches Mill
12、imeters Note Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48 8,9 LL See note 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.71 0.86 3
13、r .010 0.25 10 45 TP 45 TP 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD,
14、 CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condi
15、tion (MMC) relative to tab at MMC. 8. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both i
16、nside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For L suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For non-L suffix types (TO-39), dimen
17、sion LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-39, TO-5). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in
18、this section are specified in sections 3, 4, and 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document
19、 users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, and 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form
20、a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MI
21、L-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of
22、 precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exe
23、mption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying
24、activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB . Printed circuit board RJAThermal
25、resistance junction to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750,
26、and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 5 3.5 Radiation hardness assurance (RHA). Radiation hardness assuran
27、ce requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrica
28、l test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Wo
29、rkmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified a
30、s follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection
31、shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be perf
32、ormed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 6 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herei
33、n. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see
34、 4.3.2) 9 ICBO2, hFE4Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE4; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater. hFE4= 15 percent ICBO2, hFE412 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, wh
35、ichever is greater; hFE4= 15 percent Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-
36、in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. TA= 25C 10C. With approval of the qualifying activity and preparing activity, alternate burn-in criteria
37、 (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Use m
38、ethod 3100 of MIL-STD-750 to measure TJ. 4.3.2 Thermal impedance. The thermal impedance shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, (and VCwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III,
39、group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements
40、of table I, group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2 herein). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I he
41、rein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/251R 7 *4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.
42、4.2.1. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, sub
43、group 2 and 4.5.2 herein. 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, adjust device current, or power, to achieve a minimum TJof +100C. B5 1027 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs,
44、resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve a TJ= +225C minimum.
45、4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI, (conformance inspection), shall be analyzed to the extent pos
46、sible to identify root cause and corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has
47、 been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1
48、.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minim
49、um. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wa
