1、 MIL-PRF-19500/253L 7 April 2011 SUPERSEDING MIL-PRF-19500/253K 3 July 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JAN
2、HCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shal
3、l consist of this specification sheet and MIL-PRF-19500. 1 SCOPE * 1.1 Scope. This specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product
4、 assurance are provided for each unencapsulated device. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L” “R”, “F, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB,
5、 surface mount), and figures 3, 4, and 5 (die). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. VCBOVCEOVEBOICTJand TSTGV dc 60 V dc 45 V dc 6 mA dc 30 C -65 to +200 Types PT(1) TA= +25C PT(1) TC= +25C PT(1) TSP= +25C RJA(2) RJC(2) RJSP(IS)(2) 2N930 2N930UB mW 360 N/A mW 360 N/A mW N/A 36
6、0 C/W 485 325 (3) C/W 150 N/A C/W N/A 95 (1) For derating, see figures 6, 7, 8, and 9. (2) For thermal impedance curves see figures 10, 11, and 12. * (3) Mounted on FR-4 base material PCB (1 ounce copper) with contacts 20 mils larger than package pads. AMSC N/A FSC 5961 INCH-POUND * Comments, sugges
7、tions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online data
8、base at https:/assist.daps.dla.mil . MIL-PRF-19500/253 is inactive for new design after 3 June 2004. For new design use MIL-PRF-19500/376. The documentation and process conversion measures necessary to comply with this document shall be completed by 7 July 2011. Provided by IHSNot for ResaleNo repro
9、duction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 2 1.4 Primary electrical characteristics. Limits hFE1(1) hFE2(1) Cobo|hfe| VBE(SAT)(1) VCE(SAT)(1) VCE= 5 V dc IC= 10 A dc VCE= 5 V dc IC= 500 A dc VCB= 5 V dc IE= 0 100 kHz f 1 MHz VCE= 5 V dc IC= 500 A dc f = 30 MHz IC
10、= 10 mA dc IB= 0.5 mA dc IC= 10 mA dc IB= 0.5 mA dc Min Max 100 300 150 pF 8.0 1.5 6.0 V dc 0.6 1.0 V dc 1.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, and 5 of this specification. This section does not include do
11、cuments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, a
12、nd 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these do
13、cuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at htt
14、ps:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of
15、this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
16、 from IHS-,-,-MIL-PRF-19500/253L 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P
17、.100 2.54 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension
18、TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
19、MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) ap
20、plies to both inside corners of tab. 11. In accordance with AMSE Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without li
21、cense from IHS-,-,-MIL-PRF-19500/253L 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.9 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024
22、 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordan
23、ce with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N930UB). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 5 A- version NOTES: 1. Chip size .015 x .019 inch .001 inch. (
24、0.381 X 0.483 0.0254 mm) 2. Chip thickness .010 .0015 inch. (0.254 0.038 mm). 3. Top metal Aluminum 15,000 minimum, 18,000 nominal. 4. Back metal A. Gold 3,500 minimum, 5,000 nominal. 5. Backside Collector. 6. Bonding pad B = .003 inch (0.076 mm), E = .004 inch (0.101 mm) diameter. 7. Passivation Si
25、3N4(Silicon Nitride) 5,600 min, 8,000 nom. FIGURE 3. Physical dimensions, JANHCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 6 B-version Die size: .018 x .018 inch (0.4572 x 0.4572 mm). Die thickness: .008 .0016 inch (0.20
26、32 0.04064 mm). Base pad: .0025 inch (0.0635 mm) diameter. Emitter pad: .003 inch (0.0762 mm) diameter. Back metal: Gold, 6,500 1,950 . Top metal: Aluminum, 19,500 2,500 . Back side: Collector. Glassivation: SiO2, 7,500 1,500 . FIGURE 4. Physical dimensions, JANHCB and JANKCB die. Provided by IHSNot
27、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 7 C- version NOTES: 1. Chip size .015 x .019 inch .001 inch. (0.381 X 0.483 0.0254 mm) 2. Chip thickness .010 .0015 inch. (0.254 0.038 mm). 3. Top metal Aluminum 10,000 minimum, 12,000 nominal. 4. Back
28、 metal A. Gold 3,500 minimum, 5,000 nominal. 5. Backside Collector. 6. Bonding pad B = .003 inch (0.076 mm), E = .004 inch (0.101 mm) diameter. 7. Passivation SiO2(Silicon Oxide) 6,300 min, 9,000 nom. FIGURE 5. Physical dimensions, JANKCC die. Provided by IHSNot for ResaleNo reproduction or networki
29、ng permitted without license from IHS-,-,-MIL-PRF-19500/253L 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manuf
30、acturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: RJ
31、AThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSP(IS)Thermal resistance junction to solder pads (infinite sink mount to PCB). UB Surface mount case outlines (see figure 2). 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specif
32、ied in MIL-PRF-19500, and on figure 1 (TO-18), figure 2 (UB, surface mount), and figures 3, 4, and 5 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition
33、 document (see 6.2). * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics a
34、re as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. Electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in qu
35、ality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformanc
36、e inspection (see 4.4 and tables I, II, III, and IV). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. Pro
37、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 9 * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specificat
38、ion sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Scr
39、eening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement Measurement of MIL-PRF-195
40、00) JANS levels JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750, see 4.3.3. Thermal impedance, method 3131 of MIL-STD-750, see 4.3.3. 7 Optional. Optional. 9 ICBO2, hFE2.Not applicable. 10 48 hours minimum. 48 hours minimum. 11 ICBO2, hFE2ICBO2= 100 percent of initial value
41、or 5 nA dc, whichever is greater; hFE2 = 25 percent. ICBO2, hFE212 See 4.3.1. See 4.3.1. 13 Subgroups 2 and 3 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE2 = 25 percent. Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whic
42、hever is greater; hFE2 = 25 percent. 14 Required Required 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient rated as defined in 1.3. With approval of t
43、he qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for
44、 burn-in modification approval. This option is limited to plants who are at least transitional (QML) approved or have an approved technical review board (TRB). 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/C
45、hip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.3 Thermal impedance (measurements). The thermal impedance measurements shall beperformed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method fo
46、r determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit used in 4.3, screen 3c and the subgroup 2 of table I shall comply with the thermal impedance graph in figures 9, 10, and 11 (less than or equal to the curve value at the same tHtime) and shall be less than the proces
47、s determined statistical maximum limit as outlined in method 3131 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/253L 10 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and
48、as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspections only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests an
