1、MIL-PRF-19500/260L 26 January 2010 SUPERSEDING MIL-PRF-19500/260K 14 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, AND AR VERSIONS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, 1N1124A, 1N1126A, 1N1
2、128A, 1N3649, 1N3650, 1N1124RA, 1N1126RA, 1N1128RA, 1N3649R, AND 1N3650R, JAN ONLY The 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 and reverse versions have been moved from MIL-S-19500/104, which has been canceled, are now inactive for new design. This specification is approved for use by all Departme
3、nts and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four le
4、vels of product assurance are provided for each encapsulated 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. One level of product assurance is provided for each device type as specified in
5、 MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse (A, R, RA, and AR suffix) type devices see 3.4.1. 1.2 Physical dimensions. See figure 1 (DO-203AA, formerly DO4) and figure 2 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type V
6、RWMIOTC= 150C If(surge) TC= 150C T = 1/120 s Barometric pressure (reduced) TJand TSTG RJC1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 1N1124A (2) 1N1126A (2) 1N1128A (2) 1N3649 (2) 1N3650 (2) V dc 200 400 600 800 1000 200 400 600 800 1,000 A dc 12 (1) 12 (1) 12 (1) 12 (1) 12 (1) 3.3 (3) 3.3 (3) 3.3 (3) 3
7、.3 (3) 3.3 (3) A pk 240 240 240 240 240 25 25 25 25 25 mmHg N/A 8 16 30 54 8 8 16 30 54 C -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 C/W max 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 See notes on next page. AMSC N/A FSC 5961 INCH
8、-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this addre
9、ss information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-
10、,-,-MIL-PRF-19500/260L 2 1.3 Maximum ratings. Unless otherwise specified, TC= +25C - Continued. (1) Derate linearly 2 percent of IOper degrees Celcius for TC= 150C to TC= 200C. (2) The 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 and reverse versions have been moved from MIL-S-19500/104, which has been
11、 canceled, are now inactive for new design. (3) Derate linearly 33 mA dc/C for TC= 50C to TC= 150C. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of
12、 this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether
13、 or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the soli
14、citation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch
15、/ or https:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the reference
16、s cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modifie
17、d herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols
18、, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 (DO-203AA, formerly DO4) and figure 2 (JANHC and JANKC).
19、 3.4.1 Normal and reverse (A, R, RA, and AR suffix) types. Reverse and normal types are identical except: The normal types have the cathode connected to the stud and the reverse types have the anode connected to the stud. Provided by IHSNot for ResaleNo reproduction or networking permitted without l
20、icense from IHS-,-,-MIL-PRF-19500/260L 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Units must not be damaged by torque of 15 inch-pounds applied to 10-32NF-2B nut assembled on thread. 4. Diameter of unthreaded portion .189 inch (4.80 mm) max and .1
21、63 inch (4.14 mm) min. 5. Complete threads to extend to within 2.5 threads of seating plane. 6. Angular orientation of this terminal is undefined. 7. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.31 mm) reference FED-STD-H28 (Screw Thread Standards for Federal Servi
22、ces.) 8. The A.S.A. thread reference is 10-32UNF2A. 9. Terminal shape is unrestricted. 10. Reversed (anode to stud) units shall be marked with an R following the last digit in the type number 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (
23、DO-203AA, formerly DO-4), 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A and AR versions, and 1N1124A, 1N1126A, 1N1128A, and RA versions 1N3649, 1N3650, and R versions. Ltr Dimensions Notes Inches Millimeters Min Max Min Max CH .405 10.29 CD .424 10.77 HF .424 .437 10.77 11.10 HT .075 .175 1.90 4.44 OA
24、H .800 20.32 C .250 6.35 9 T .060 1.52 SL .422 .453 10.72 11.51 K 3,5,7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/260L 4 A Version Ltr Dimensions Inches Millimeters Min Max Min Max A .112 .118 2.85 2.99 B .147 .153 3.73 3.89 C .00
25、9 .012 0.229 0.305 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), consists of: Ti thickness = 1,200 minimum, Ni thickness = 2,000 minimum, Ag thickness = 4,000 minimum. Metallizat
26、ion back, (cathode) consists of: Ti thickness = 1,200 minimum, NI thickness = 2,000 minimum, Ag thickness = 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions JANHCA and JANKCA 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A. Provid
27、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/260L 5 3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the contrac
28、t or order (see 6.2). 3.4.3 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500 and herein. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the
29、 negative end for forward bias. The reversed units shall also be marked with an R, AR, or RA suffix in the part number. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Elec
30、trical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appeara
31、nce. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.1.1 Sampling and inspection. Sampling and inspection shall be in accor
32、dance with MIL-PRF-19500 and herein, except for accumulation period shall be 3 months in lieu of 6 weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Tests in either polarity shall be sufficient to obtain approval of both polarities. 4
33、.2.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification
34、 sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking pe
35、rmitted without license from IHS-,-,-MIL-PRF-19500/260L 6 4.3 Screening. Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herei
36、n shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 1a 1b Required Required Not required Required (JANTXV only) 2 Optional Not required 3a (1) 3b 3c Required Surge (see 4.3.1) Thermal impedance (see 4.3.2) Required Surge (see
37、 4.3.1) Thermal impedance (see 4.3.2) 4 Not applicable Not applicable 5 Applicable Not applicable 6 Not applicable Not applicable 7a 7b Optional Optional Optional Optional 8 Required Not required (2) 9 VF1and IR1Not applicable 10 Method 1038 of MIL-STD-750, test condition A, t = 96 hours Not applica
38、ble 11 VF1and IR1; subgroup 2 of table I herein, VF1= 0.1 V(pk) from initial value; IR1= 5 A dc or 100 percent from the initial value, whichever is greater. VF1and IR112 Burn-in, see 4.3.3 and 4.5.2. method 1038 of MIL-STD-750, test condition B. Method 1038 of MIL-STD-750 test condition A, t = 48 ho
39、urs 13 Subgroups 2 and 3 of table I herein; VF1= 0.1 V (PK); IR1= 5 A dc or 100 percent from the initial value, whichever is greater. Subgroup 2 of table I herein, VF1= 0.1 V(pk) from initial value; IR1= 5.0 A dc or 100 percent from the initial value, whichever is greater. 14a 14b Required Required
40、Required Required 15 Required Not required 16 Required Not required (1) Surge shall precede thermal impedance. These tests shall be performed anytime after screen 3a and before screen 9. (2) IR1measurement shall not be indicative of an open condition. 4.3.1 Surge current. Surge current, method 4066
41、of MIL-STD-750. IO= 0; VRM(W)= 0; IFSM= 275 A; six surges; TA= 25C; tp = 8.3 ms; one minute minimum time between surges. NOTE: A shorter time between surges will be allowed as long as it can be demonstrated that TJ 10C, as measured immediately prior to the first current pulse and immediately after t
42、he final current pulse. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/260L 7 4.3.2 Thermal impedance The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750. The thermal impedance conditions
43、 and maximum thermal impedance limit shall be derived by each vendor. The chosen thermal impedance measurement and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal impedance curve shall be plotted. The chosen thermal impedance values sh
44、all be considered final after the manufacturer has had the opportunity to test five consecutive lots. Heating current (IH) rated IO; tH= 150 to 400 ms; tMD= 50 to 300 s; 50 mA IM 250 mA. 4.3.3 Power burn-in. Power burn-in conditions are as follows: method 1038 of MIL-STD-750, test condition B. TC= 1
45、50C, f = 60 Hz, IO= 12 A dc (see 4.5.2); VR= rated VRWM (pk) (see 1.3). 4.3.4 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with IR1of table I, subgroup 2. 4.4 Conformance in
46、spection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance wit
47、h the conditions specified for subgroup testing in appendix E,table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accor
48、dance with table III herein. * 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 -55C to +175C, 100 cycles. B3 4066 Condition A, TC= 150C; VR= (rated VR) AC peak (see 1.3), IFSM(surge) = 240 A; IO= 12 A dc; six surges 1/120 s, tP= 8.3 mS,
49、one minute minimum time between surges. B4 1037 0.25 rated IO IOapplied rated IO(see 4.5.3) 2,000 cycles. B5 1027 IF= 4 A dc; VR= rated VR(see 1.3), TA= 125C; or adjusted as required to achieve TJ= 275C minimum (see 4.5.2), f = 60 Hz t = 1,000 hours. Option 1: TA= + 30C max. ; TJ= 225C minimum; t = 216 hours; n = 45 c =
