1、 MIL-PRF-19500/286K 24 May 2013 SUPERSEDING MIL-PRF-19500/286J 28 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N4245 THROUGH 1N4249, JAN, JANTX, JANTXV, AND JANHC This specification is approved for use by all Departments and Agencies of t
2、he Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product a
3、ssurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 and figure 2. 1.3 Maximum ratings. Type VRVRWMIO(1) TA= 55C (2) IFSMIO= 1.0 A dc tp= 8 ms 1N4245 1N4246 1N4247 1N4248 1N4249 V dc 200 400 600 800 1,000 V (pk) 200 400 600 800 1,000 A dc 1.
4、0 1.0 1.0 1.0 1.0 A (pk) 25 25 25 25 25 Types Barometric pressure (reduced) TSTGand TJ RJL at L = .375 inch (9.53 mm) ZJXtrr1N4245 1N4246 1N4247 1N4248 1N4249 mm Hg 8 8 8 33 33 C -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 C/W 42 42 42 42 42 C/W 4.5 4.5 4.5 4.5 4.5 s 5.0 5.0 5.0 5.0
5、5.0 See notes on next page. AMSC N/A FSC 5961 INCH-POUND These devices are inactive for new design, preferred devices are 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 of MIL-PRF-19500/427. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O.
6、Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comp
7、ly with this revision shall be completed by 24 August 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 2 1.3 Maximum ratings - Continued. (1) IOrating is independent of heat sinking, special mounting, or forced air across the
8、body or leads of the device. (2) Derate linearly at 8.33 mA/C between TA= +55C to +175C. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this speci
9、fication or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not the
10、y are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or
11、 contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla
12、.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of t
13、his document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification.
14、Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviati
15、ons, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max BD .065 .110 1.65 2.79 3 BL .125 .250 3.
16、18 6.35 4 LD .027 .032 0.69 0.81 LL .70 1.30 17.78 33.02 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. The BL dimension shall include the entire body including slugs and sections of the leads o
17、ver which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. The shape of the body, within the bounds of the dimensions is optional. 6. In accordance with ASME Y14.5M, diameters are equiv
18、alent to x symbology. * FIGURE 1. Physical dimensions. * * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 4 A - version Dimensions Ltr Inches Millimeters Min Max Min Max A .047 .053 1.19 1.35 B .007 .011 0.18 0.28 C .033 .037 0.
19、84 0.94 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: Top metal: Gold 10,000 minimum. Back metal: Gold 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to X symbology. FIGURE 2. JAN
20、HC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 5 3.4 Diode construction. Except for the JANHC devices, these devices shall be constructed utilizing metallurgically bonded, thermally matched, non-cavi
21、ty, double-plug construction. The metallurgical bond between the chip and the plug shall meet the category I requirement of MIL-PRF-19500, appendix A. 3.5 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 and figure 2. No lea
22、d (Pb) shall be used in the construction of the die bonds. 3.5.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.6 Electrical performance c
23、haracteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500.
24、At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability,
25、or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall b
26、e in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
27、 table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. * 4.2.2 JANHC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500. Provided by IHSNo
28、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 6 4.3 Screening (JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with
29、table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels (1) 3c See 4.3.2 7a 7b Not applicable Optional 9 Not applicable 10 Method 1038 of MIL-STD-750, condition A 11 IR1and VF11
30、2 See 4.3.1 (2) 13 Subgroup 2 of table I herein. VF1 +.1, -.2 V dc; IR1 100 percent of initial values or 100 nA dc, whichever is greater. Scope display evaluation (see 4.5.3) 14a (3) 14b Not applicable Required (1) Shall be performed anytime after temperature cycling, screen 3a, and does not need to
31、 be repeated in screening requirements. (2) Thermal impedance is not required in screen 13, if it has already previously performed. (3) For clear glass diodes, the hermetic seal (gross leak) may be performed at anytime after temperature cycling. 4.3.1 Power burn-in conditions. Power burn-in conditio
32、ns are as follows (see 4.5.2): IO(min)= Rated IO(see 1.3 herein). TA= 55C maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOor TAto achieve the required TJ. TJ= 135C minimum. With approval of the qualifying activity and preparing activity, alternate burn-i
33、n criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval.
34、 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where appropriate. Measurement delay time (tMD) = 70 s max. See table II, s
35、ubgroup 4 herein. Thermal impedance limit used by supplier shall not exceed the thermal impedance graph, see figure 3 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be co
36、nducted in accordance with MIL-PRF-19500 and table I. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shal
37、l be in accordance with table I, subgroup 2 herein. Subgroup Method Inspection B2 4066 IFSM= 25 A (pk), ten surges of 1/120 s each at 1 minute intervals, super-imposed on I0= 1.0 A dc, VR= rated VRWM(see 1.3). B3 1027 I0= 1.0 A dc minimum; TA= +55C (max.); TJ= +150C minimum; f = 50 - 60 Hz; VR= rate
38、d VRWM(see 1.3). Adjust IOto achieve a TJ= +150C minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 7 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup te
39、sting in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with of table I, subgroup 2 herein. * 4.4.3.1 Group C inspection, table E-VII, of MIL-PRF-19500. Subgroup Method Inspection C2 2036 Tension: Test condition A; weight = 10 pounds; t = 15
40、 seconds. Lead fatigue: Test condition E; weight 2 pounds. C5 4081 +25C TR35C , RJL 42C/W, L = .375 inch (9.525 mm) (see 1.3 and 4.3.2). C6 1026 I0= 1.0 A dc minimum; TA= +55C (max.); TJ= +150C minimum; f = 50 - 60 Hz; VR= rated VRWM(see 1.3). Adjust IOto achieve a TJ= +150C minimum. 4.4.4 Group E i
41、nspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.5 Methods
42、 of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. 4.5.2 Free air power bur
43、n-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each DUT still sees the full Pt(minimum) and that the minimum applied voltage, where applicable, is maintained through out the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ. 4.5.2.1 Mount
44、ing configurations. Any clips or heat sink mounting configurations may be utilized provided that IOis adjusted such that the junction temperature of each diode is maintained at TJ= +135C minimum for burn-in screening and TJ= +150C minimum for JAN, JANTX and JANTXV life testing. 4.5.3 Scope display e
45、valuation. Scope display evaluation shall be sharp and stable in accordance with method 4023 of MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only with the approval of the qualifying activity. Scope display in table I, group A, subgroup 4 shall be perfor
46、med on a scope. Reverse current over the knee shall be 500 A peak. 4.5.4 Peak reverse power test. This test shall be measured as on the figure 4 test circuit, or equivalent. A 20 microsecond half-sine waveform of current shall be used and peak reverse power shall be determined by the product of peak
47、 reverse voltage and peak reverse current. 4.5.5 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/286K 8 TABLE I. Group A inspection.
48、 Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 2/ Thermal impedance 3101 See 4.3.2 ZJX4.5 C/W Forward voltage Forward voltage 4011 4011 IF= 1 A dc (pulsed, see 4.5.5); duty cycle = 2 percent maximum IF= 3 A (pk), du
49、ty cycle 2 percent pulsed, tp 8.3 ms VF1 VF20.6 0.8 1.3 1.3 V (pk) V (pk) Reverse current leakage 4016 DC method; VR= rated (see 1.3) IR11.0 A dc Breakdown voltage 4021 IR= 100 A dc V(BR)1N4245 1N4246 1N4247 1N4248 1N4249 240 480 720 960 1,150 V V V V V Subgroup 3 High temperature operation: TA= +125C Reverse current leakage 4016 DC me
