1、 MIL-PRF-19500/358F 12 July 2013 SUPERSEDING MIL-PR-19500/358E 23 JULY 1999 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N3305B THROUGH 1N3350B AND RB, 1N4549B THROUGH 1N4554B AND RB, JAN, JANTX, JANTXV, AND JANS This specification is approved for
2、 use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for 50 watt, silicon, voltage regulat
3、or diodes: B type (standard polarity) and RB type (reverse polarity). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (DO-5). * 1.3 Maximum ratings. Unless otherwise specified TC= 25C. Maximum ratings are as show
4、n in maximum test ratings herein (see 3.8), and as follows: a. Derate PT= 50W at TC +75C at 0.5 W/C above TA +75C. * b. -65C TJ+175C; -65C TSTG +175C. * c. Thermal resistance (RJC) = 2.0C/W maximum. * 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in primary
5、test ratings herein (see 3.8). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want
6、to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 12 October 2013. Provided by IHSNot for ResaleNo reproduction or networking pe
7、rmitted without license from IHS-,-,-MIL-PRF-19500/358F 2 2. APPLICABLE DOCUMENTS. * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for
8、additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government
9、 documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF D
10、EFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardiz
11、ation Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precede
12、nce. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished unde
13、r this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and de
14、finitions used herein shall be as specified in MIL-PRF-19500 and as follows: IZMMaximum Zener current. IZSMMaximum Zener surge current. IZTZener test current. Z Impedance. ZKKnee impedance. VZTemperature coefficient. * 3.4 Interface and physical dimensions. The interface and physical dimensions shal
15、l be as specified in MIL-PRF-19500 and herein. Current density of internal conductors shall be as specified in MIL-PRF-l9500. * 3.4.1 Polarity. Standard polarity units (B suffix) shall have the anode connected to the case stud. Reverse polarity units (RB suffix) shall have the cathode connected to t
16、he case stud. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/358F 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max C .375 9.53 C1 .080 2.03 4 CD .667 16.94 CH .450 11.43 HF .667 .687 16.94 17.45 HT1.115 .200 2.92 5.08 HT2.060
17、1.52 OAH 1.000 25.4 SD .250-28 SL .422 .453 11.23 11.51 SU 3 UD .220 .249 5.59 6.32 T .140 .175 3.56 4.45 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Devices with “B“ suffix have the anode connected to the case and devices with “RB“ suffix (reverse pola
18、rity) have the anode connected to the terminal. 3. Complete threads to extend to within 2.5 threads of seating plane. 4. Angular orientation of this terminal is undefined. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions (DO-5). Provided by
19、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/358F 4 * 3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL- STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisiti
20、on document (see 6.2). * 3.4.3 RB types. Reverse (cathode to stud) units shall be marked with an R preceding the B in the type designation (RB suffix). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. * 3.6 Electrical performance characteristics. Unless otherwise specified herein, the
21、 electrical performance characteristics are as specified in 1.3, 1.4, and table I. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. * 3.8 Maximum and primary test ratings. Maximum and primary test ratings for voltage regulator diodes are specifie
22、d in table III herein. * 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements sp
23、ecified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Lot accu
24、mulation period shall be 6 months in lieu of 6 weeks. * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/358F 5 * 4
25、.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen
26、 (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3C Thermal impedance, see 4.3.2. Thermal impedance, see 4.3.2. 9 IR1and VZ (for devices with VZ(nom) 10 V dc; see column 1 of table III). Not applicable. 11 IR1and VZ; IR1= 100 percent of initial value or 2 A dc, w
27、hichever is greater; VZ = 1 percent of initial value (for devices with VZ(nom) 10 V dc; see column 2 of table III). IR1and VZ12 See 4.3.1. See 4.3.1. 13 Subgroup 2 (except forward voltage test) and subgroup 3 of table I herein; IR1= 100 percent of initial value or 2 A dc, whichever is greater, VZ= 1
28、 percent of initial value. Subgroup 2 (except forward voltage test) of table I herein; IR1= 100 percent of initial value or 2 A dc, whichever is greater, VZ= 1 percent of initial value. * (1) This test shall be performed anytime after screen 3. * 4.3.1 Power burn-in conditions. Power burn-in conditi
29、ons are as follows: IZ: Column 4 of table III at TJ= 150C minimum. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere
30、appropriate). Measurement delay time (tMD) = 70 s max. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accord
31、ance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) an
32、d table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. * Provided by IHSNot for ResaleNo reproduction or networking permitted with
33、out license from IHS-,-,-MIL-PRF-19500/358F 6 * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition * B4 1037 2,000 cycles. See 4.5.8. herein. B5 1027 IZ= column 4 of table III for 168 hours; TA= 125C or adjusted, as required, to give an average lot; TJ= +225C.
34、 B6 4081 RJC= 2.0C/W maximum. For purposes of this test “junction to case“ shall be used in lieu of “junction to lead“ and RJCshall be used in lieu of RJL. The case shall be the reference point for calculation of junction to case thermal resistance (RJC). The mounting arrangement shall be with heat
35、sink to case. * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 4066 IZSM= column 9 of table III. * B3 1027 IZT= column 4 of table III, adjust TA, mounting, or both to achieve TJ= 150C minimum. * B3 1037 2,000 cycles. See paragraph 4.5.8
36、. B5 4081 RJC= 2.0C/W maximum. For purposes of this test “junction to case“ shall be used in lieu of “junction to lead“ and RJCshall be used in lieu of RJL. The case shall be the reference point for calculation of junction to case thermal resistance (RJC). The mounting arrangement shall be with heat
37、 sink to case. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Del
38、ta measurements shall be in accordance with table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/358F 7 * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Tension: test condition A,
39、 20 pounds, t = 15 seconds; Torque (stud): Test condition D2, mounting = normal mounting means, 30 lb-in, t = 30 seconds; bending stress: Test condition; 3 pounds, 15 seconds. C5 Not required. * C6 1027 IZ= column 4 of table III, adjust TA, mounting, or both to achieve TJ= +150C minimum. * C6 1037 6
40、,000 cycles. See paragraph 4.5.8. C8 4071 IZT= column 4 of table III; T1= 30C 3C, T2= T1+100C each sublot; VZ= column 12 of table III, %/C; n = 22, c = 0; small lot = 12 devices, c = 0. * C9 Voltage regulation (see 4.5.2), each sublot, column 8 of table III. n = 22, c = 0 4.5 Methods of inspection.
41、Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Surge current IZSM. The currents specified in column 9 of table III shall be applied in the reverse direction and shall be superimposed on the current (IZ= column 4 of table III) a total of five surges at 1 m
42、inute intervals. Each individual surge shall be a one-half square wave pulse of 1/120 second duration or a one-half sine wave with the same effective (rms) current. * 4.5.2 Voltage regulation VZ(reg).A current at 10 percent of IZM(column 7 of table III herein) shall be maintained until thermal equil
43、ibrium is obtained and the VZshall be noted. The current shall then be increased to a level of 50 percent of IZMand maintained at this level until thermal equilibrium is obtained, at which time the voltage change shall not exceed column 8 (VZ(reg) of table III. During this test, the case temperature
44、 (TC) of the diode shall be equal to 30 3C. 4.5.3 Regulator voltage. The test current (IZTcolumn 4 of table III) shall be applied until thermal equilibrium is obtained. During this test, the case temperature (TC) of the diode shall be equal to 30 3C. 4.5.4 Temperature coefficient of regulator voltag
45、e (VZ). The device shall be temperature stabilized with current applied prior to reading regulator voltage at the specified case temperatures. 4.5.5 Inspection condition. Unless otherwise specified herein, all inspections shall be made at TCof 30 3C. 4.5.6 Test ratings. Test ratings shall be as show
46、n in table III. Type numbers with the suffix “RB“ shall have identical requirements as shown in table III for the corresponding B type except the polarity shall be as specified in 3.4.1 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-
47、19500/358F 8 4.5.7 Reverse current. The specified reverse voltage shall be applied to the terminals and the reverse current measured. * 4.5.8 DC intermittent operation life. A cycle shall consist of an “on“ period, when forward current is applied suddenly, not gradually, to the device for the time n
48、ecessary to achieve an increase (delta) case temperature of +85C +15C, -5C followed by an “off“ period, when the current is suddenly removed for cooling the case through a similar delta temperature. Auxiliary (forced) cooling is permitted during the “off“ period only. Forward current and “on“ time,
49、within specific limits, and “off“ time may be adjusted to achieve the delta case temperature. Heat sinks shall only be used, if and to the degree necessary, to maintain test samples within the desired delta temperature tolerance. The heating time shall be such that 30 s theating 180 s. The forward current may be stea
