1、 MIL-PRF-19500/368M 2 October 2013 SUPERSEDING MIL-PRF-19500/368L 20 November 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3440, 2N3440L, 2N3440UA, AND 2N3440U4, JAN, JANTX, JANTXV, JANS, JANHCB, JANKCB,
2、JANHCC, JANKCC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described
3、herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-P
4、RF-19500, and two levels of product assurance for each unencapsulated device type die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-5 an
5、d TO-39), figure 2 (JANHCB and JANKCB (B versions), figure 3 (2N3439UA and 2N3440UA surface mount versions), figure 4 (2N3439U4 and 2N3440U4 versions), and figure 5 (JANHCC and JANKCC (C versions). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TA= +25C PT(2) TC= +25C PT(2) T
6、SP= +25C RJA(3) RJC(3) RJSP(3) VCBOVEBOVCEOICTSTGand TJ2N3439 2N3439L 2N3439UA 2N3439U4 W 0.8 0.8 0.8 0.8 W 5.0 5.0 N/A 5 W N/A N/A 2.0 N/A C/W 175 175 175 175 C/W 30 30 N/A 8 C/W N/A N/A 70 N/A V dc 450 450 450 450 V dc 7 7 7 7 V dc 350 350 350 350 A dc 1.0 1.0 1.0 1.0 C -65 to +200 2N3440 2N3440L
7、2N3440UA 2N3440U4 0.8 0.8 0.8 0.8 5.0 5.0 N/A 5 N/A N/A 2.0 N/A 175 175 175 175 30 30 N/A 8 N/A N/A 70 N/A 300 300 300 300 7 7 7 7 250 250 250 250 1.0 1.0 1.0 1.0 (1) For derating, see figure 6. (2) For derating, see figures 7, 8, and 9. (3) For thermal impedance curves see figures 10, 11, 12, and 1
8、3. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of thi
9、s address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 2 January 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
10、HS-,-,-MIL-PRF-19500/368L 2 1.4 Primary electrical characteristics. Unless otherwise specified TA= +25C. hFE2(1) hFE1(1) |hfe| CoboVBE(sat)(1) VCE(sat)VCE= 10 V dc IC= 2 mA dc VCE= 10 V dc IC= 20 mA dc VCE= 10 V dc IC= 10 mA dc f = 5 MHz VCB= 10 V dc IE= 0 100 kHz f 1 MHz IC= 50 mA dc IB= 4 mA dc IC
11、= 50 mA dc IB= 4 mA dc pF V dc V dc Min 30 40 3 Max 160 15 10 1.3 0.5 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this
12、 specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or n
13、ot they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitat
14、ion or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assis
15、t.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text
16、of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/368M 3 Dimensions Symbol Inc
17、hes Millimeters Note Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48 8,9 LL See note 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.
18、71 0.86 3 r .010 0.25 10 45 TP 45 TP 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defi
19、ned by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum mate
20、rial condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall b
21、e internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For transistor types 2N3439L and 2N3440L (T0-5), dimension LL
22、= 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For transistor types 2N3439 and 2N3440 (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-5 and TO-39). Provided by IHSNot for ResaleNo reproduction or networking perm
23、itted without license from IHS-,-,-MIL-PRF-19500/368M 4 1. Chip size. .049 x .057 inch .002 inch (1.24 mm x 1.45 mm 0.05 mm). 2. Chip thickness .010 .0015 inch nominal (0.254 mm 0.038 mm). 3. Top metal Aluminum 15,000 minimum, 18,000 nominal 4. Back metal. A. Al/Ti/Ni/Ag 12k/3k/7k/7kminimum,15k/ 5k/
24、10k/10k nominal. B. Gold 3,500 minimum, 5,000 nominal. 5. Backside. Collector. 6. Bonding pad. B = .005 x .008 inch (0.127 mm x 0.203 mm). E = .010 x .007 inch (0.254 mm x 0.178 mm). NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME
25、 Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions JANHCB and JANKCB (die) B versions. E BProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/368M 5 Dimensions Note Symbol Inches Millimeters Min Max Min Max BL .
26、215 .225 5.46 5.71 BL2.225 5.71 BW .145 .155 3.68 3.93 BW2.155 3.93 CH .061 .075 1.55 1.90 3 L3.003 0.08 5 LH .029 .042 0.74 1.07 LL1.032 .048 0.81 1.22 LL2.072 .088 1.83 2.23 LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2.006 .022 0.15 0.56 5 Pin no. 1 2 3 4 Transistor Collector Emitter Base N/C
27、 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ controls the overall package thickness. When a window lid is used, dimension “CH“ must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shap
28、e (square, notch, radius, etc.) may vary at the manufacturers option, from that shown on the drawing. * 5. Dimensions “ LW2“ minimum and “L3“ minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation wa
29、s designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “ LW2“ maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The coplanarity deviation
30、 of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, surface mount (2N3439UA, 2N3440UA) versi
31、on. UA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/368M 6 Symbol Dimensions Inches Millimeters Min Max Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.91 LH .020 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1
32、.19 1.45 LL1 .085 .125 2.16 3.17 LL2 .045 .075 1.14 1.90 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.21 Q1 .030 .070 0.76 1.78 Q2 .020 .035 0.51 0.89 1 Collector 2 Base 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 is collector. 4
33、. Terminal 2 is base. 5. Terminal 3 is emitter. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions, surface mount (2N3439U4, 2N3440U4) version (U4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
34、,-MIL-PRF-19500/368M 7 Chip size . 0.045 x 0.045 inch 0.002 inch (1.143 x 1.143 mm 0.051mm) Chip thickness . 0.008 0.0005 inch (0.203 0.0127mm) Top metal Aluminum 17,500 minimum; 20,000 nominal Back metal Gold 5,000 minimum; 6,500 nominal Backside . Collector Bonding padsB= 0.008 x 0.005 inch (0.203
35、 x 0.127mm) E= 0.011 x 0.005 inch (0.279 x 0.127mm) NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions JANHCC and JANKCC (die) C versions. Provided by IHS
36、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/368M 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be
37、products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be a
38、s specified in MIL-PRF-19500. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSPThermal resistance junction to solder pads. UA Surface mount case outlines (see figure 3). TRB Technical review board. TSPTemperature of solder pads. 3.4 Interface and physical dimens
39、ions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCB and JANKCB (B versions), figure 3 (2N3439UA and 2N3440UA surface mount, figure 4 (2N3439U4 and 2N3440U4), and figure 5 (JANHCC and JANKCC (C versions). 3.
40、4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN de
41、signators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requireme
42、nts shall be the subgroups specified in table I herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. The radiation hardened designator M, D, P, L, R, F, G, or H
43、 shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or a
44、ppearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualificat
45、ion inspection shall be in accordance with MIL-PRF-19500 and table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/368M 9 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualificati
46、on only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to
47、maintain qualification. * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be accept
48、able. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) 9 ICBO1and hFE1Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO1; hFE1; ICB01 = 100 percent of initial value or 0.5 A dc, whichever is greater; hFE1= 15 percent of initial value. ICBO1and hFE112 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein; ICB01= 100 percent of initial value or 200 nA dc, whichever is greater; hFE1= 15 percent of initial value.
