1、 MIL-PRF-19500/369H 15 July 2010 SUPERSEDING MIL-PRF-19500/369G 10 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defens
2、e. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistor. Three levels of product assurance are provided for each device ty
3、pe as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PTRJARJCVCBOVCEOVEBOVCERIBICTSTGand TA= +25C (1) TC= +25C (1) (2) TJW 3.0 W 25 C/W 58.5 C/W 3 V dc 160 V dc 140 V dc 7.0 V dc 150 A dc 2.0 A dc 3.0 C
4、 -65 to +200 (1) For derating see figures 2 and 3. (2) For thermal impedance see figure 4. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
5、 Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be complet
6、ed by 15 October 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE2VCE= 4 V dc IC= 0.5 A dc |hfe| VCE= 4 V dc IC= 0.5 A dc hfeVCE= 4 V dc IC= 0
7、.5 A dc VCE(sat)IC= 0.5 A dc IB= 50 mA dc Pulse response f = 100 kHz tontoffMin Max 25 100 4 40 15 100 V dc 1 s 8 s 15 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited i
8、n other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this spe
9、cification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are thos
10、e cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dap
11、s.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document
12、and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-195
13、00 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviatio
14、ns, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 3 FIGURE 1. Physical dimensions (similar to TO-66). TO-66 Pro
15、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 4 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .470 .500 11.94 12.70 CH .250 .340 6.35 8.64 HR .350 8.89 HR1.115 .145 2.92 3.68 HT .050 .075 1.27 1.91 LD .028 .034 0.71 0.8
16、6 4, 6 LL .360 .500 9.14 12.70 L1.050 1.27 6 MHD .142 .152 3.61 3.86 4 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 3 PS1.093 .107 2.36 2.72 3 S .570 .590 14.48 14.99 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured
17、 at points .050 inch (1.27 mm) +.005 inch (0.13 mm) - 0 inch below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch
18、 (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. Pin 1 is the emitter and pin
19、 2 is the base. The collector shall be electrically connected to the case. FIGURE 1. Physical dimensions - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 5 3.4 Interface and physical dimensions. Interface and physical d
20、imensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical perfo
21、rmance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-P
22、RF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein
23、are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E in
24、spection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall
25、be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 6 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV o
26、f MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance, see 4.
27、3.2. 9 Not applicable. 11 ICEX1and hFE3. 12 Burn-in (see 4.3.1). 13 ICEX1= 100 percent of initial value or 2 A whichever is greater. hFE3= 25 percent Subgroup 2 table I herein. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirem
28、ents. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: a. TA= +30C 5C. b. VCB 100 V dc. c. TJ= +187.5C 12.5C. NOTE: No heatsink or forced air-cooling on the devices shall be permitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordanc
29、e with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-
30、19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networkin
31、g permitted without license from IHS-,-,-MIL-PRF-19500/369H 7 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points)
32、 shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Subgroup Method Conditions B3 1027 TJ= +187.5C 12.5C, TA= +25C 5C; VCB 24 V dc. B6 1032 TSTG= +200C B7 3053 Load condition C; (unclamped inductive load), (see safe operating area figure herein) TC= +25C, duty cycl
33、e 10 percent, R1= 0.1 , tr= tf 500 ns. Test 1. tp = 10 ms, (vary to obtain IG), VBB2= 1.5 V dc, RBB1= 5 , L = 5 mH (two Super Electric Corporation type S16884 in parallel or equivalent, dc resistance 0.1 ), VBB1= 10 V, RBB2= 100 , VCC= 10 V dc, IC= 3 A dc. Test 2. tp = 10 ms, (vary to obtain IC), VB
34、B2= 1.5 V dc, RBB1= 50 , L = 100 mH ( two Traid C48U in series: 80 mH winding and 20 mH winding or equivalent, dc resistance 0.1 ), VBB1= 10 V, RBB2= 100 , VCC= 10 V dc, IC= 0.5 A dc. B7 3053 Load condition B (see safe operating figure herein), TA= +25C, L = 20 mH (Traid C48U or equivalent, dc resis
35、tance 0.1 ), VCC= 50 V dc, IC= 3 A dc, RBB1= 5 , VBB1= 10 V dc, clamped voltage = 140 V dc, RBB2= 100 , VBB2= 1.5 V dc. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as fo
36、llows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Subgroup Method Conditions C2 1056 Test condition B. C2 2036 Test condition A, weight - 3 pounds, 15 seconds. C5 3131 Thermal resistance, see 4.3.2, RJC= 3C/W. C6 1026 TJ
37、= +187.5C 12.5C, TA= +25C 5C, VCB 24 V dc. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance
38、with table I, subgroup 2. 4.5 Methods of inspection. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or netwo
39、rking permitted without license from IHS-,-,-MIL-PRF-19500/369H 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2. ZJXC/W Breakdown voltage, collecto
40、r to base 3011 Bias condition D, pulsed (see 4.5.1), IC= 100 mA dc V(BR)CEO140 V dc Breakdown voltage, collector to emitter 3011 Bias condition B, IC= 100 mA dc, RBE= 100, pulsed (see 4.5.1) V(BR)CER150 V dc Breakdown voltage, collector to emitter 3011 Bias condition A, IC= 100 mA dc, VBE= -1.5 V dc
41、, pulsed (see 4.5.1) V(BR)CEX160 V dc Emitter to base current 3061 Bias condition D, VEB= 7.0 V dc IEBO1 mA dc Collector - emitter cutoff current 3041 Bias condition A, VBE= -1.5 V dc, VCE= 140 V dc ICEX120 A dc Base emitter voltage (nonsaturated) 3066 Test condition B; pulsed (see 4.5.1), IC= 0.5 A
42、 dc, VCE= 4.0 V dc VBE1.7 V dc Collector to emitter voltage (saturated) 3071 Pulsed (see 4.5.1), IC= 0.5 A dc, IB= 50 mA dc VCE(sat) 1 V dc Forward current transfer ratio 3076 VCE= 4 V dc, IC= 50 mA dc, pulsed (see 4.5.1) hFE150 Forward current transfer ratio 3076 VCE= 4 V dc, IC= 0.5 A dc, pulsed (
43、see 4.5.1) hFE225 100 Forward current transfer ratio 3076 VCE= 4 V dc, IC= 1 A dc, pulsed (see 4.5.1) hFE310 See footnote at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 9 * TABLE I. Group A inspection - Continue
44、d. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias condition A, VBE= -1.5 V dc, VCE= 140 V dc ICEX5 mA dc Low temperature operation TA= -65C Forward current transfer ratio 3076 VCE=
45、4 V dc, IC= 0.5 A dc, pulsed (see 4.5.1) hFE415 Subgroup 4 Pulse response transfer ratio 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 5 herein. Turn-on time VCC= 30 V dc, (see figure 5); IC= 0.5 A dc, IB= 50 mA dc ton8 s Turn-off time VCC= 30 V dc, (see
46、 figure 5); IC= 0.5 A dc, IB1= -IB2= 50 mA dc toff15 s Magnitude of common emitter small-signal short-circuit forward current transfer ratio 3306 VCE= 4 V dc, IC= 0.5 A dc, f = 100 kHz |hfe| 4 40 Open circuit (output capacitance) 3236 VCB= 10 V dc, IE= 0, 100 kHz f 1 MHz Cobo300 pF Small-signal shor
47、t- circuit forward- current transfer ratio 3206 VCE= 4 V dc, IC= 0.5 A dc, f = 1.0 kHz. hfe15 100 See footnote at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 10 * TABLE I. Group A inspection - Continued. Inspect
48、ion 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Safe operating area (dc operation) 3051 TC= +25C, t = 1 s, 1 cycle, see figure 6 and 7. Test 1 IC= 3 A dc, VCE= 8.33 V dc Test 2 IC= 833 mA dc, VCE= 30 V dc Test 3 IC= 178.5 mA dc, VCE= 140 V dc Electrical measurements See table I, subgroup 2 herein. Subgroups 6 and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 2 and 3 (JAN, JANTX and JANTXV). Group C, subgroup 2 and 6. Group E, su
