1、 MIL-PRF-19500/374E 30 April 2009 SUPERSEDING MIL-PRF-19500/374D 29 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and A
2、gencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors for use in high-speed power s
3、witching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated die. * 1.2 Physical dimensions. See figure 1 (types 2N3996 and 2N3997, 4 lead stud package), figure 2 (types 2N
4、3998 and 2N3999, 3 lead stud package), figure 3, figure 4 (JANHC and JANKC, B-version), and figure 5 (JANHC and JANKC, C-version). * 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PT(1) PT(2) VEBOVCBOVCEOIBICIC(3) TSTGand TJRJCTA= +25C TC= +100C W W V dc V dc V dc A dc A dc A dc C C/W 2
5、30 8 100 80 0.5 5.0 10 -65 to +200 3.33 (1) Derate linearly, 11.4 mW/C for TA +25C. (2) Derate linearly, 300 mW/C for TC +100C. (3) This value applies for tp 1 ms, duty cycle 50percent. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense
6、 Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documen
7、tation and process conversion measures necessary to comply with this revision shall be completed by 30 July 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 2 1.4 Primary electrical characteristics at TC= +25C. hFE2 (1) |hfe|
8、VBE (sat) 2 (1) VCE (sat) 2 (1) CoboLimit VCE= 2 V dc; VCE= 5 V dc; IC= 5 A dc; IC= 5 A dc; VCB= 10 V dc IC= 1 A dc IC= 1 A dc; IB= 500 mA dc IB= 500 mA dc IE= 0 f = 10 MHz 100 kHz f 1 MHz 2N3996 2N3997 2N3998 2N3999 V dc V dc pF Minimum 40 80 3 Maximum 120 240 12 1.6 2.0 150 (1) Pulsed (see 4.5.1).
9、 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort
10、has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handboo
11、ks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devi
12、ces, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbi
13、ns Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howev
14、er, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 3 FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997. Provided by IHSNo
15、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 4 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CH .345 .400 8.76 10.16 A1.250 6.35 3 CD.370 .437 9.40 11.10 3 CD1.318 .380 8.08 9.65 HF .424 .437 10.77 11.10 PS .180 .215 4.57 5.46 5 PS1
16、.080 .110 2.03 2.79 5 HT .090 .140 2.29 3.56 2,6 OAH .575 .675 14.61 17.15 1 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU .078 1.98 7 T .040 .065 1.02 1.65 T1.040 .065 1.02 1.65 4 SD .190-32 UNF-2A 8 Z .002 0.05 Z1.006 0.15 NOTES: 1. Terminal 1, emitter; terminal 2, base; terminal 3, collector
17、; terminal 4, case. 2. Chamfer or undercut on one or both ends of hexagonal portion is optional. 3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1and A1. 4. Terminal r can be flattened and pierced or hook type. A visual index is required when the fla
18、ttened and pierced tab terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected to the case. The other three terminals shall be electrically isolated from the case. 5. Angular orientation of terminals with respect to hexagon is optiona
19、l. 6. HT dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I. 9. Dimensions are in inches. * 10. Millimeters are giving for genera
20、l information only. * 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E
21、5 FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 6 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CH .345 .400 8.76 10.16 A1.250 6.35 CD1.318 .380 8
22、.08 9.65 CD .370 .437 9.40 11.10 HF .424 .437 10.77 11.10 PS .125 .165 3.18 4.19 4,7,8 PS1.110 .145 2.79 3.68 4,7 PS2.090 .140 2.29 3.56 4,7,8 PS3.185 .215 4.70 5.46 4,7,8 HT .090 .140 2.29 3.56 OAH .575 .675 14.61 17.15 5 UD .155 .189 3.94 4.80 SL .400 .455 10.16 11.56 SU .078 1.98 9 T .040 .065 1.
23、02 1.65 T1.040 .065 1.02 1.65 SD .190-32 UNF-2A 3 NOTES: * 1. Dimensions are in inches. Millimeters are given for general information only. 2. Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90 degree option is used. 3. SD is the pitch
24、diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 (3.18
25、mm) of the stud. 7. Terminal spacing measured at the base seat only. 8. Dimensions PS, PS1, PS2, and PS3are measured from the centerline of terminals. 9. Maximum unthreaded dimension. 10. This dimension applies to the location of the center line of the terminals. 11. A 90 degree angle lead orientati
26、on as shown may be used at the option of the manufacturer. All dimensions of the basic outline except PS, PS1, and the 120lead angle apply to this option. 12. Terminal 1, emitter; terminal 2, base; terminal 3, collector. 13. A slight chamfer or undercut on one or both ends of the hexagonal is option
27、al. * 14. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 7 NOTES: 1. Chip
28、 size 82 X 82 mils 2. Chip thickness . 6 to 12 mils 3. Top metal Aluminum 25,000 minimum, 30,000 nominal 4. Back metal. Gold 2,500 minimum, 3,000 nominal 5. Backside Collector 6. Bonding pad B = 8 x 60 mils, E = 8 x 50 mils FIGURE 3. JANHC and JANKC (A-versions) die dimensions. Provided by IHSNot fo
29、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 8 NOTES: 1. Chip size 100 X 100 mils 2. Chip thickness . 6 to 12 mils 3. Top metal Aluminum 25,000 minimum, 33,000 nominal 4. Back metal. Gold 1,500 minimum, 2,500 nominal 5. Backside Collector 6. Bonding
30、 pad 12 x 30 mils FIGURE 4. JANHC and JANKC (B-versions) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 9 NOTES: 1. Die size .120 inch (3.05 mm) x .120 inch (3.05 mm) .002 inch (0.05 mm). 2. Die thickness .014 inch
31、 (0.35 mm) .0015 inch nominal (0.04 mm). 3. Top metal Aluminum, 54,000 minimum, 60,000 nominal. 4. Back metal Gold 6,000 minimum, 8,000 nominal. 5. Backside Collector 6. Bonding pad B = .060 x .012 inch (1.5 mm x 0.30 mm). E = .050 x .012 inch (1.27 mm x 0.30 mm). * FIGURE 5. JANHC and JANKC (C-vers
32、ions) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 10 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices fu
33、rnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbo
34、ls, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1, 2, 3, 4, and 5 herein. * 3.4.1 Lead finish. Lead finish shall be solderable in ac
35、cordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein
36、, the electrical performance characteristics are as specified in paragraph 1.3, 1.4 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Electrostatic discharge protection. The devices covered by this specification require electrostati
37、c discharge protection. 3.8.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended. a. Devices should be handled on benches with conductive handling devices. b. Ground test e
38、quipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and tro
39、ubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from
40、other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 11 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified a
41、s follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspec
42、tion shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be
43、 performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with appendix G of MIL-PRF-19500. This testing may be performed utilizing a TO-5 package in lieu of the TO-59 or the TO-1
44、11. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/374E 12 * 4.3 Screening (JANS, JANTXV, JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall
45、be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 ICES1and hFE2ICES111 ICES1
46、and hFE2; ICES1= 100 ICES1and hFE2; I CES1= 100 percent of initial value or 100 nA dc, whichever is greater; percent of initial value or 100 nA dc; whichever is greater. hFE2= +15 percent, -10 percent 12 See 4.3.1 See 4.3.1 13a Subgroups 2 and 3 of table I herein; ICES1= 100 percent of initial value
47、 or 100 nA dc, whichever is greater; hFE2= +15 percent, -10 percent Subgroup 2 of table I herein, ICES1= 100 percent of initial value or 200 nA dc, whichever is greater; hFE2= +20 percent, -10 percent 13b Insulation resistance Insulation resistance (terminal to (terminal to case) method 1016 case) m
48、ethod 1016 of MIL-STD-750 of MIL-STD-750 (types 2N3996 (types 2N3996 and 2N3997 only); and 2N3997 only); test test condition B (short collector, condition B (short collector, emitter, and base terminals emitter, and base terminals together); Riso= 109 minimum. together); Riso= 109 minimum (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions for all leve
