1、 MIL-PRF-19500/376K 30 March 2013 SUPERSEDING MIL-PRF-19500/376J 11 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N2484, 2N2484UA, 2N2484UB, 2N2484UBC, 2N2484UBN, 2N2484UBCN JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANS
2、R, JANSF, JANSG, JANSH JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of
3、this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provid
4、ed for die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (similar to TO-18), figure 2, (surface mount case outlines UA), figure 3, (surface mount case
5、outlines UB, UBC, UBN, and UBCN), and figures 4 and 5 (die). * 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Types PT(1) VCBOVEBOVCEOICTJand TSTGRJA(2) RJSP(2) TA= +25C mW V dc V dc V dc mA dc C C/W C/W 2N2484 360 60 6 60 50 -65 to +200 325 N/A 2N2484UA 360 60 6 60 50 -65 to +200 275 110
6、 2N2484UB, UBN 360 60 6 60 50 -65 to +200 350 100 2N2484UBC, UBCN 360 60 6 60 50 -65 to +200 350 100 (1) For derating see figures 6, 7, and 8. (2) For thermal impedance see figures 9, 10, 11, 12, and 13. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addr
7、essed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation an
8、d process conversion measures necessary to comply with this document shall be completed by 30 June 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 21.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C.
9、 Limits hfeCobo|hfe|2 VCE(sat)(1) VCE= 5 V dc IC= 1 mA dc f = 1 kHz IE= 0 VCB= 5 V dc 100 kHz f 1 MHz IC= 500 A dc VCE= 5 V dc f = 30 MHz IC= 1.0 mA dc IB= 0.1 mA dc Min Max 250 900 pF 5.0 2.0 7.0 V dc 0.3 Limits NF IC= 10 A dc, VCE= 5 V dc Rg= 10 k hFE2hFE5f = 100 Hz f = 1000 Hz f = 10 kHz VCE= 5 V
10、 dc IC= 10 A dc VCE= 5 V dc IC= 1 mA dc Min Max dB 7.5 dB 3 dB 2 200 500 250 800 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sectio
11、ns of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, wh
12、ether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
13、 solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch
14、 or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited h
15、erein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 3Dimens
16、ions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 Q .040 1.02 5 TL .028 .048 0.71
17、 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body cont
18、our optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1an
19、d L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are
20、equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 4Dimensions Note Symbol Inches Millimeters Min Ma
21、x Min Max BL .215 .225 5.46 5.71 BL2.225 5.71 BW .145 .155 3.68 3.94 BW2.155 3.94 CH .061 .075 1.55 1.91 3 L3.003 0.08 5 LH .029 .042 0.74 1.07 LL1.032 .048 0.81 1.22 LL2.072 .088 1.83 2.24 LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2.006 .022 0.15 0.56 5 Pin no. 1 2 3 4 Transistor Collector Em
22、itter Base N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The c
23、orner shape (square, notch, radius) may vary at the manufacturers option, from that shown on the drawing. 5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was d
24、esigned. (Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2 maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The co-planarity deviat
25、ion of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (2N2484UA). UA * Provi
26、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 5* FIGURE 3. Physical dimensions, surface mount (2N2484UB, UBC, UBN, and UBCN) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195
27、00/376K 6Dimensions Symbol Inches Millimeters NoteMin Max Min Max BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB only, 4 BH .046 .056 1.17 1.42 UBN only, 5 BH .055 .069 1.40 1.75 UBC only, 6 BH .055 .069 1.40 1.75 UBCN only, 7 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.9
28、7 3 PLS LL2 .014 0.356 3 PLS LS1.035 .039 0.89 0.99 LS2.071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r2 .022 0.56 UB hFE4; ICBO2= 100 percent of initial value or 2 nA dc, whichever is greater. hFE4= 15 percent ICBO2,hFE412 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I
29、 herein; ICBO2= 100 percent of initial value or 2 nA dc, whichever is greater; hFE4= 15 percent Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 2 nA dc, whichever is greater; hFE4= 25 percent * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV
30、 levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 114.3.1 Screening (JANHC and JANKC). Screening for JANHC and JANKC die shall be in accordance with MIL-PRF-19500 “Discret
31、e Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 to 30 V dc, power shall be applied to achieve TJ= +135C minimum using a min
32、imum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is re
33、quired. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3 Thermal response. For very small junction devices such as this, the term thermal response shall be used in lieu of thermal impedance although measurem
34、ents shall be performed the same way as thermal impedance in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). Measurement delay time (tMD) = 70 s max. See group E, subgroup 4 herein. 4.4 Conformance inspection. C
35、onformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only
36、(table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection s
37、hall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table IV herein
38、. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be after each step and shall be in
39、 accordance with table IV herein. 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum TJof +100C. B5 1027 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE:
40、 If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve
41、 a TJ= +225C minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/376K 124.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements
42、of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from the
43、 wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power
44、shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual tim
45、e of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspecti
46、on shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen f
47、rom an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be
48、 pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for grou
49、p C testing. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table IV herein. * 4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500. Subgroup Method Condition * C2 2036 Test condition E; (not applicable for UA, UB, UBC, UBN, and UBCN devices)
