1、 MIL-PRF-19500/392J 26 August 2011 SUPERSEDING MIL-PRF-19500/392H 31 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3485A AND 2N3486A, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the De
2、partment of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Three levels of product assurance are provid
3、ed for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-46). 1.3 Maximum ratings, unless otherwise specified, TC=+ 25C. PTPTRJCRJAVCBOVCEOVEBOICTJand TSTGTA=+25C (1) (2) TC= +25C (1) (2) W 0.5 W 2.0 C/W 80 C/W 325 V dc 60 V dc 60 V dc 5 mA dc 600 C -65 TO +20
4、0 (1) For derate see figures 2 and 3. (2) For thermal impedance see figures 4 and 5. AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since con
5、tact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be completed by 26 November 2011. INCH-POUND Pro
6、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 2 1.4 Primary electrical characteristics. hFE2VCE= 10 V dc IC= 1.0 mA dc hFE4VCE= 10 V dc IC= 150 mA dc |hfe| VCE= 20 V dc IC= 50 mA dc Cobo100 kHz f 1 Mhz Switching (1) f = 100 MHz VCB=
7、 10 V dc IE= 0 tontoffton+ toff(nonsat-urated) Min Max 2N3485A 40 2N3486A 100 2N3485A 40 120 2N3486A 100 300 2.0 10 pF 8 ns 45 2N3485A 175 2N3486A 200 ns 18 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this
8、specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requ
9、irements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unle
10、ss otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copie
11、s of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contrac
12、t, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo re
13、production or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 LL .500 1.750 12.70 44.45 6 LU .016 .019 0.4
14、1 0.48 6 L1.050 1.27 6 L2.250 6.35 6 Q .040 1.02 3 TL .028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 4 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Millimeters are given for general information only. 3. Symbol TL is meas
15、ured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6.
16、Symbol LU applies between L1and L2. Dimension LD applies between L2and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ANSI
17、 Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions - TO-46. TO-46 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in
18、 MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3
19、). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-46) herein. 3.4.1 Lead fin
20、ish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical perform
21、ance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitte
22、d from the body, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of ins
23、pections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and table II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19
24、500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in
25、table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 5 4.3 Screening (JANTX and JANT
26、XV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of Measurements MIL-
27、PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750. See 4.3.2. 7 Optional 9 Not applicable. 10 24 hours minimum. 11 ICBO2, hFE412 See 4.3.1. 13 Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc whichever is greater. hFE4= 15 percent. 14
28、 Required (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum P
29、D= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required
30、. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method f
31、or determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 6 4.4 Conformance inspection. Conformance inspecti
32、on shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions
33、specified for subgroup testing in table E-VIc of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in accordance with table I, subgroup 2 and 4.5.2 herein. 4.4.2.1 Group B inspection, (JA
34、N, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenev
35、er a failure is identified as wafer lot and /or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failure mode has been implemented and the devices from the wafer lot a
36、re screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be incr
37、eased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature lif
38、e (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements. a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in
39、the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B
40、 for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified in table E-VII of MIL-PRF-19500 and 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Ele
41、ctrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.2 herein. 4.4.3.1 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RJAand RJConly, as applicable (see
42、 1.3) and in accordance with thermal impedance curves. C6 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/392J 7 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspe
43、ction lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with th
44、e requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) and delta measurements shall be
45、in accordance with the applicable steps of 4.5.2 and table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-75
46、0. 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Symbol Limit Method Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB= 50 V dc ICB02(1) 100 percent of initial value or 5 nA dc, whichever is greater. 2 Forward current transf
47、er ratio 3076 VCE= 10 V dc; IC= 150 mA dc; pulsed see 4.5.1 hFE4(1) 25 percent change from initial reading. (1) Devices which exceed the table I limits for this test shall not be accepted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500
48、/392J 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 Solderability 3/ 2026 n = 15 leads, c = 0. Resistance to solvents 3/ 4/ 1022 n = 15 devices, c = 0. Temp cycling 3/ 1051 Test condition
49、C, 25 cycles. n = 22 devices, c = 0. Heremetic seal Fine leak Gross leak 1071 n = 22 devices, c = 0. Electrical measurements Table I, subgroup 2. Bond strength 3/ 2037 Precondition TA= +250C at t = 24 hours or TA= +300C at t = 2 hours n = 11 wires, c = 0. Decap internal visual (design verification) 2075 n = 4, c = 0. Subgroup 2 Thermal impedance 3
