1、 MIL-PRF-19500/396L 18 July 2013 SUPERSEDING MIL-PRF-19500/396K 14 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3762, 2N3762L, 2N3762U4, 2N3762UA, 2N3763, 2N3763L, 2N3763U4, 2N3763UA, 2N3764, AND 2N3765, JAN, JANTX, JANTXV, JANS, JANS
2、M, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the perform
3、ance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“, “L”, “R”,
4、“F, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1, (2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), figure 2 2N3764 and 2N3765 (TO-46), figure 3 (U4), figure 4 (UA), and figure 5 (die) herein. 1.3
5、Maximum ratings. Unless otherwise specified, TA= +25C. Types PTTA= +25C (1) PTTC= +25C (1) PTTSP(AM)= +25C (1) PTTSP(IS)= +25C (1) RJASteel (2) RJAKovar (2) RJCSteel (2) RJCKovar RJSP(AM) (2) RJSP(IS) (2) TJand TSTGW W W W C/W C/W C/W C/W C/W C/W C 2N3762, L 1.0 2 175 175 30 50 2N3762U4 10 15 2N3762
6、UA 5 1.94 35 90 -65 2N3763, L 1.0 2 175 175 30 50 to 2N3763U4 10 15 +200 2N3763UA 5 1.94 35 90 2N3764 0.5 2 325 350 70 60 2N3765 0.5 2 325 350 70 60 Types VCBOVCEOVEBOICV dc V dc V dc A dc 2N3762, L, 2N3762U4, 2N3762UA, 2N3764 40 40 5 1.5 2N3763, L, 2N3763U4, 2N3763UA, 2N3765 60 60 5 1.5 (1) For der
7、ating, see figures 6, 7, 8, 9, 10, 11, and 12. (2) For thermal curves, see figures 13, 14, 15, 16, 17, 18, and 19. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or e
8、mailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be complete
9、d by 18 October 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/396L 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Limits hFE1 VCE= 1.0 V dc; IC= 10 mA dc hFE3 VCE= 1.0 V dc; IC= 500 mA dc hFE5(1)
10、 VCE= 5.0 V dc; IC= 1.5 A dc 2N3762 2N3762L 2N3764 2N3763 2N3763L 2N3765 Min Max 35 40 140 30 20 Limits |hFE| f = 100 MHz VCE= 10 V dc IC= 50 mA dc VCE(SAT)3 IC= 500 mA dc IB= 50 mA dc (1) Cobo VCE= 10 V dc IE= 0 100 kHz f 1 MHz Pulse response See figure 20 See figure 21 2N3762 2N3764 2N3763 2N3765
11、tdtrtstfV dc pF ns ns ns ns Min 1.8 1.5 Max 6.0 6.0 0.5 25 8 35 80 35 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this
12、specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this specification, whether or not t
13、hey are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation
14、or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dl
15、a.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of
16、 this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/396L 3 Dimensions Symbol Inche
17、s Millimeters Note Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48 8,9 LL See note 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.71
18、 0.86 3 r .010 0.25 10 45 TP 45 TP 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone define
19、d by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum materi
20、al condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be
21、internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For L-suffix or non-S-suffix devices (T0-5), dimension LL = 1.5
22、inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39). TO-5, 39 Provided by IHSNot for ResaleNo reproduction or networ
23、king permitted without license from IHS-,-,-MIL-PRF-19500/396L 4 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 LL .500 .750 12.70 19.05 6 LU .016 .019 0.41 0.48 6 L1.050 1.27 6
24、 L2.250 6.35 6 Q .040 1.02 3 TL .028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 4 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at
25、 gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6. Symbol LU applies between L1and L2. Dimension LD applies between L2and LL minimum.
26、 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1 is emitter, lead 2 is
27、 base, and lead 3 is collector. FIGURE 2. Physical dimensions - 2N3764 and 2N3765 (TO-46). TO-46 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/396L 5 Symbol Dimensions Inches Millimeters Min Max Min Max BL 0.215 0.225 5.46 5.72 BW 0.1
28、45 0.155 3.68 3.94 CH 0.049 0.075 1.24 1.91 LH - 0.020 - 0.508 LL1 0.085 0.125 2.16 3.17 LL2 0.045 0.075 1.14 1.90 LS1 0.070 0.095 1.48 2.41 LS2 0.035 0.048 0.889 1.21 LW1 0.135 0.145 3.43 3.68 LW2 0.047 0.057 1.19 1.45 Q1 0.030 0.070 0.762 1.78 Q2 0.020 0.035 0.508 0.88 Terminal BIPOLAR 1 Collector
29、 2 Base 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions and configuration (U4). Provided by IHSNot for ResaleNo reproduction or networking pe
30、rmitted without license from IHS-,-,-MIL-PRF-19500/396L 6 Dimensions Symbol Inches Millimeters Note Min Max Min Max A .061 .075 1.55 1.90 3 A1 .029 .041 0.74 1.04 B1 .022 .028 0.56 0.71 B2 .075 REF 1.91 REF B3 .006 .022 0.15 0.56 5 D .145 .155 3.68 3.93 D1 .045 .055 1.14 1.39 D2 .0375 BSC .952 BSC D
31、3 .155 3.93 E .215 .225 5.46 5.71 E3 .225 5.71 L1 .032 .048 0.81 1.22 L2 .072 .088 1.83 2.23 L3 .003 0.08 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “A“ controls the overall package thickness. When a window lid is used, dimension “A“ mus
32、t increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius) may vary at the manufacturers option, from that shown on the drawing. 5. Dimensions “B3“ minimum and “L3“ minimum and the appropriately castellation length define an uno
33、bstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “B3“ maximum define the maximum width and depth of the castellation at any point on its surface. Me
34、asurement of these dimensions may be made prior to solder dipping. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical dimensions, surface mount (UA version). * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH
35、S-,-,-MIL-PRF-19500/396L 7 NOTES: 1. Chip size . .040 inch (1.02 mm) x .040 inch (1.02 mm) .001 inch (0.03 mm). 2. Chip thickness .010 .0015 inch. 3. Top metal Aluminum 15,000 minimum, 18,000 nominal. 4. Back metal Gold 3,500 minimum, 5,000 nominal. 5. Backside . Collector. 6. Bonding pad B = .006 i
36、nch (0.15 mm) x .008 inch (0.2 mm), E = .006 inch (0.15 mm) x .004 inch (0.1 mm). FIGURE 5. JANHCA and JANKCA die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/396L 8 3. REQUIREMENTS 3.1 General. The individual item requir
37、ements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contra
38、ct award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2
39、, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance r
40、equirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical te
41、st requirements shall be the subgroups specified in table I. 3.8 Marking. Devices shall be marked in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation req
42、uired). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are cl
43、assified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and 6.3 herein. 4.2.1 JANHC and JANKC qualification. JANHC a
44、nd JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the perfor
45、mance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
46、-MIL-PRF-19500/396L 9 * 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall n
47、ot be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV level 3a 3b (1) 3c Required Not applicable Required method 3131 of MIL-STD-750. See 4.3.3. Required Not applicable Required method 3131 of MIL-STD-750. See 4.3.3. 4 9 ICBO2, hFE3read and record Not app
48、licable 10 24 hours minimum 24 hours minimum 11 ICBO2; hFE3; ICBO2= 100 percent of initial value or 10 nA dc, whichever is greater. hFE3= 15 percent ICBO2; hFE312 See 4.3.1 240 hours minimum See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICBO2 = 100 percent of initial value or 10 nA dc, whichever is greater; hFE3= 15 percent (2) Subgroup 2 of table I herein; ICBO2 = 100 percent of initial value or 10 nA dc, whichever is greater; hFE3= 15 percent * (1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repe
