1、 MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, J
2、ANKCD, AND JANKCE This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performanc
3、e requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds (category 1) between both sides of the silicon die and terminal pins. Four levels of product assurance are provided for each encapsulated dev
4、ice type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (axial lead) for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 M
5、aximum ratings. Unless otherwise specified, TA= +25C and ratings apply to all case outlines. 1.3.1 Ratings applicable to all types. TSTG= TJ= -65C to +175C. * 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Col. 8 Col. 9 Type (1) VRWMIO(L)TL = +30C; L =
6、 .375 inch (1) TEC =130C IO2 TA= 55C max (2) (3) IO3 TA= 100C (3) (4) IFSMIO= 2 A dc tp= 8.3 ms VRWM = Rated TA= 55C RJL at L = .375 inch (9.52 mm) (5) RJEC at L = 0 inch (0 mm) (6) RJX (3) 1N5550, US 1N5551, US 1N5552, US 1N5553, US 1N5554, US V dc 200 400 600 800 1,000 A 5 5 5 5 5 A 3.0 3.0 3.0 3.
7、0 3.0 A dc 2.0 2.0 2.0 2.0 2.0 A(pk) 100 100 100 100 100 C /W 22 22 22 22 22 C /W 6.5 6.5 6.5 6.5 6.5 C /W 47 47 47 47 47 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990
8、, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with
9、this revision shall be completed by 6 December 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 2 1.3.2 Maximum ratings. Continued. (1) Barometric pressure reduced: 1N5550, 1N5551, 1N5552: 8 mm Hg (100,000 feet); 1N5553, 1N555
10、4: 33 mm Hg (70,000 feet). (2) Derate linearly at 22.2 m/A /C from +55C +100C (3) For the 3A rating at 55C ambient and the 2A rating at 100C ambient, these IOratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained as shown in col.
11、 3 and where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX) in 1.3.1 is not exceeded. This equates to RJX 47C/W in col. 9. Also see application notes in 6.5.1. (4) Derate linearly at 26.7mA/C above TL= +100C to +175C ambient. * (5) See figure 8. * (6
12、) See figure 9. 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Type VF1at IF= 9.0 A(pk) 1 percent duty cycle, 8.3 ms max pulse width IR1, pulsed VR 20 ms IR2at TA= +125C, pulsed VR 20 ms 1N5550, US 1N5551, US 1N5552, US 1N5553, US 1N5554, US Min V(pk) 0.6 0.6 0.6 0.6 0
13、.6 Max V(pk) 1.2 1.2 1.2 1.3 1.3 A dc (max) at VR(V dc) 1.0 200 1.0 400 1.0 600 1.0 800 1.0 1,000 A dc (max) at VR(V dc) 60 200 60 400 60 600 60 800 60 1,000 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 3 Ltr Dimensions Notes In
14、ches Millimeters Min Max Min Max BD .115 .180 2.92 4.57 3, 4 BL .130 .300 3.30 7.62 4 LD .036 .042 0.92 1.07 LL .900 1.300 22.86 33.02 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The BL dimension shall include the entire body including slu
15、gs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diamet
16、ers are equivalent to x symbology. FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554, Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 4 Ltr Dimensions Inches Millimeters Min Max Min Max BL .200 .275 5.08 6.99 BD .137 .18
17、6 3.48 4.72 ECT .019 .034 0.48 0.86 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are eq
18、uivalent to x symbology. FIGURE 2. Physical dimensions of 1N5550US through 1N5554US. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 5 Ltr Dimensions Inches Millimeters Min Max Min Max A .085 .091 2.16 2.31 B .072 .078 1.83 1.98 C
19、.008 .014 0.20 0.36 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are: Top (cathode) Au Thickness = 10,000 minimum, Back (anode) Au Thickness = 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x
20、 symbology. FIGURE 3. JANHCA and JANKCA (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 6 Ltr Dimensions Inches Millimeters Min Max Min Max A .088 .092 2.24 2.34 B .070 .077 1.78 1.96 C .007 .035 0.18 0.
21、89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (cathode) Au Thickness = 10,000 minimum, Back (anode) Au Thickness = 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE
22、 4. JANHCB (B-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 7 Ltr Dimensions Inches Millimeters Min Max Min Max A .060 .065 1.52 1.65 B .052 .058 1.32 1.47 C .008 .014 0.20 0.36 NOTES: 1. Dimensions are i
23、n inches. 2. Millimeters are given for general information only. 3. The physical characteristics are Top (cathode) Au Thickness = 10,000 minimum, Back (anode) Au Thickness = 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. JANHCC (C-version) die di
24、mensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 8 Ltr Inches Millimeters Min Max Min Max A .081 .087 2.05 2.20 B .055 .061 1.40 1.55 C .007 .012 0.18 0.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for g
25、eneral information only. 3. The physical characteristics are Top (anode) Al Thickness = 60,000 minimum. Back (cathode) Au Thickness = 2,500 minimum, 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 6. JANHCD and JANKCD (D-version) die dimensions. Provided by IHSNot
26、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 9 Ltr Inches Millimeters Min Max Min Max A .081 .087 2.05 2.20 B .055 .061 1.40 1.55 C .007 .012 0.18 0.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. T
27、he physical characteristics are Top (anode) Al Thickness = 60,000 minimum. Back (cathode) Al/Ti/Ni/Ag Thickness = 2,500 minimum, 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 7. JANHCE and JANKCE (E-version) die dimensions. Provided by IHSNot for ResaleNo reprodu
28、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 10 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification
29、 or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are li
30、sted. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contrac
31、t. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or
32、 from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this docu
33、ment takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
34、furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, sym
35、bols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. EC End-cap. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US,
36、and figures 3, 4, 5, 6, and 7 (JANHC and JANKC). 3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is limited to 175C maximum. Where a
37、choice of finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 11 3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double p
38、lug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with the requirements of category I appendix A, MIL-PRF-19500. No point contacts. Silver button dumet design is prohibited. US version devic
39、es shall be structurally identical to the non-surface mount devices except for lead terminations. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the cathode marking. All marking w
40、hich is omitted from the body of the device shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots
41、 around the periphery of the cathode end may be used. No color coding will be permitted. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The e
42、lectrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classi
43、fication of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
44、 specified herein. 4.2.1 Group E inspection. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herei
45、n that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reprodu
46、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/420M 12 * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordanc
47、e with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see Appendix E, table E-IV of MIL-PRF-19500) JANS level JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.1 and 4.4.1) Thermal impedance (see 4.3.1 and 4.4.1) 9 VF1and IR1Not applicable 10
48、 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A (2) 11 VF1and IR1; VF1 0.1 V dc IR1250 nA dc or 100 percent of initial value whichever is greater. VF1and IR112 Required, see 4.3.2 Required, see 4.3.2 (2) (3) 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial reading or 250 nA dc, whichever is greater. VF1 .1 V dc change from initial value. Scope display evaluation (see 4.5.3)
