1、 MIL-PRF-19500/448F 12 September 2013 SUPERSEDING MIL-PRF-19500/448E 18 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N4405, 2N4405UA, and 2N4405UB, JAN AND JANTX This specification is approved for use by all Departments and Agencies of
2、 the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors. Two levels of product assurance are
3、 provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-39), figure 2 (UA), and figure 3 (UB). 1.3 Maximum ratings TA= +25C unless otherwise stated. Types PT(1) TC= +25C PT(1) TA= +25C PT(1) TSP(IS)= +25C PT(1) TSP(AM)= +25C RJC(2) RJA(2) RJ
4、SP(IS)(2) RJSP(AM)(2) 2N4405 2N4405UA 2N4405UB W 5.0 N/A N/A W 1.0 N/A N/A W N/A 1.0 1.0 W N/A 4 N/A C/W 35 N/A N/A C/W 175 N/A N/A C/W N/A 110 90 C/W N/A 40 N/A Types VCBOVCEOVEBOICTSTGand TJ2N4405 2N4405UA 2N4405UB V dc 80 80 80 V dc 80 80 80 V dc 5 5 5 A dc 0.5 0.5 0.5 C -65 to +200 -65 to +200 -
5、65 to +200 (1) See figures 4, 5, 6, 7, and 8. (2) For thermal impedance, see figures 9, 10, 11, 12, and 13. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed
6、to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 12
7、 December 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 2 1.4 Primary electrical characteristics TA= +25C unless otherwise stated. Limit hFE1(1) hFE3(1) VBE(SAT)2(1) VCE(SAT)3(1) Cobo|hfe| VCE= 5 V dc IC= 100 A dc VCE= 5 V
8、dc IC= 150 mA dc IC= 500 mA dc IB= 50 mA dc IC= 500 mA dc IB= 50 mA dc VCB= 10 V dc IE= 0 mA dc 100 kHz f 1 MHz VCE= 20 V dc IC= 50 mA dc f = 100 MHz Min Max 75 100 300 V dc 0.85 1.20 V dc 0.5 pF 20 2.0 6.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this sec
9、tion are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users ar
10、e cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of
11、this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750
12、- Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise
13、noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Prov
14、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 3 Dimensions Symbol Inches Millimeters Notes Min. Max. Min. Max. CD .305 .335 7.75 8.51 CH .24 .26 6.1 6.6 HD .335 .37 8.51 9.4 LC .200 TP 5.08 TP 4 LD .016 .021 .41 .53 2, 5 LL .500 .750
15、 12.70 19.05 5 LU .016 .019 .41 .48 3, 5 L1 .050 1.27 L2 .250 6.35 P .100 2.54 Q .040 1.02 r .007 .18 TL .029 .045 .74 1.14 TW .028 .034 .71 .86 45 TP 45 TP NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Measured in the zone beyond .250 (6.35) from the
16、seating plane. 4. Measured in the zone .050 (1.27 mm) and .250 (6.35) from the seating plane. 5. Measured from the maximum diameter of the actual case. 6. All three leads. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. Lead 1 is the emitter, lead 2 is the base, and le
17、ad 3 is the collector, which is electrically connected to the case. FIGURE 1. Physical dimensions for 2N4405 (similar to TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 4 Dimensions Note Symbol Inches Millimeters Min Max Mi
18、n Max BL .215 .225 5.46 5.71 BL2.225 5.71 BW .145 .155 3.68 3.93 BW2.155 3.93 CH .061 .075 1.55 1.90 3 L3.003 0.08 5 LH .029 .042 0.74 1.07 LL1.032 .048 0.81 1.22 LL2.072 .088 1.83 2.23 LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2.006 .022 0.15 0.56 5 Pin no. 1 2 3 4 Transistor Collector Emitte
19、r Base N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ controls the overall package thickness. When a window lid is used, dimension “CH“ must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The c
20、orner shape (square, notch, radius, etc.) may vary at the manufacturers option, from that shown on the drawing. * 5. Dimensions “LW2“ minimum and “L3“ minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castel
21、lation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “LW2“ maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The coplanarity d
22、eviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (UA version). Prov
23、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 5 Ltr. Dimensions Note Ltr. Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2
24、 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on pac
25、kage denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions, surface mount (UB version). UB Provided by IHS
26、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be
27、products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as spec
28、ified in MIL-PRF-19500. PCB Printed circuit board RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSP(AM)Thermal resistance junction to solder pads (adhesive mount to PCB). RJSP(IS)Thermal resistance junction to solder pads (infinite sink mount to PCB). 3.4 Interf
29、ace and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-39), figure 2 (UA), and figure 3 (UB). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of
30、 lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical
31、test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in su
32、ch a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Scre
33、ening (see 4.3). c. Conformance inspection (see 4.4, and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualificatio
34、n only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to mai
35、ntain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/448F 7 4.3 Screening JANTX level. Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in
36、accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX level only (1) 3c Method 3131of MIL-STD-750, thermal impedance. See 4.3.2. 9 Not applicable 11 hFE2and ICBO212 See 4.3.1 13 Subgroup 2
37、of table I herein, ICBO2= 100 percent of initial value or 10 nA dc, whichever is greater; hFE2= 20 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in
38、conditions are as follows: VCB= 10 - 30 Vdc. Power shall be applied to achieve TJ=+135C minimum and a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. 4.3.2 Thermal impedance (ZJXmeasurements). The ZJXmeasurements shall be performed in accordance with method 3131 of MIL-STD-750 using the
39、 guidelines in that method for determining IM, IH, tH, tMD, (and VCwhere appropriate). The ZJXlimit used in screen 3c of 4.3 and subgroup 2 of table I shall comply with the thermal impedance graph in figures 9, 10, 11, 12, and 13 (less than or equal to the curve value at the same tHtime) and shall b
40、e less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A insp
41、ection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified in 4.4.2.1 for JAN and JANTX group B testing. Electrical measurements (end-points) and delta requiremen
42、ts for JAN and JANTX shall be after each step in 4.4.2.1 and shall be in accordance with table I, group A, subgroup 2. Delta measurements shall be in accordance with table III herein as specified in the notes for table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without
43、 license from IHS-,-,-MIL-PRF-19500/448F 8 4.4.2.1 Group B inspection, (JAN and JANTX). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same
44、wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined
45、in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life: TA= 150C, VCB= 80 percent rated voltage, 48 hours minim
46、um. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN and JANTX, samples shall be selected randomly from a minimum o
47、f three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperatu
48、re, the samples for life test (group B for JAN and JANTX) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurem
49、ents (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. Subgroup Method Condition * C2 2036 Test condition E, not applicable for UA and UB devices. C5 3131 RJAonly. C6 Not applicable. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified
