1、 MIL-PRF-19500/478K 12 December 2012 SUPERSEDING MIL-PRF-19500/478J 27 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS This specification is app
2、roved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery p
3、ower rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die. 1.2 Physical dimensions. See figure 1 (DO-4) and figures 2, 3, 4, and 5 (unencapsulated die). 1.3 Maximum ratings. Types (1) VRV
4、RWMIO(1) TC = +100C IFSMtp= 8.3 ms TC= +100C trrRJCTJand TSTG1N5812, R 1N5814, R 1N5816, R V dc 50 100 150 V (pk) 50 100 150 A dc 20 20 20 A(pk) 400 400 400 ns 35 35 35 C/W 1.5 C -65C to +175C (1) Derate linearly, 250 mA/C from +100C to +150C and 300 mA/C above +150C. AMSC N/A FSC 5961 INCH-POUND *
5、Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the AS
6、SIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 2 Dimensions N
7、otes Inches Millimeters Min Max Min Max A1.250 6.35 b .250 6.35 3 C .018 .065 0.46 1.65 CD .265 .424 6.74 10.77 CD1.265 .437 6.74 11.10 CH .300 .405 7.62 10.28 HF .424 .437 10.77 11.10 HT .075 .175 1.91 4.44 OAH .600 .800 15.24 20.32 SD 4, 6 SL .422 .453 10.72 11.50 SU .078 1.98 5 T .066 .103 1.68 2
8、.62 UD .163 .189 4.14 4.80 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. Angular orientation and contour of this terminal is undefined. 4. Pitch diameter .190-32 UNF-2A (coated) - .1697 (4.310 mm). 5. Length of incomplete or undercut threads
9、 of UD. 6. Anode for R suffix devices. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (DO-4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 3 Dimensions Symbol Inches Millimet
10、ers Min Max Min Max A .130 .133 3.30 3.37 B .114 .117 2.89 2.97 C .009 .010 0.228 0.254 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), back (cathode) consists of: Ag th
11、ickness = 3,000 minimum, NI thickness = 1,500 minimum, Cr thickness = 800 minimum. 4. Requirements in accordance with MIL-PRF-19500 (appendix E) are performed in a DO-4 package (see 6.5). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions JANC d
12、ie dimensions (A-version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 4 Dimensions Symbol Inches Millimeters Min Max Min Max A .130 .143 3.30 3.63 B .114 .133 2.89 3.37 C .009 .010 0.228 0.254 NOTES: 1. Dimensions are in inches. 2.
13、 Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), back (cathode) consists of: Ag thickness = 3,000 minimum, NI thickness = 1,500 minimum, Cr thickness = 800 minimum, optionally Ti thickness = 300 minimum. 4. R
14、equirements in accordance with MIL-PRF-19500 (appendix H) are performed in a DO-4 package (see 6.5). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions JANC die dimensions (B-version). Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 5 Dimen
15、sions Symbol Inches Millimeters Min Max Min Max A .152 .156 3.86 3.96 B .126 .130 3.20 3.30 C .008 .012 0.203 0.31 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The physical characteristics of the die are: Metallization (front (anode), consi
16、sts of: AL thickness = 60,000 minimum, (back, (cathode) consists of: AU thickness = 2,500 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions JANC (JANHC and JANKC) die dimensions (C-version). Provided by IHSNot for Resale-,-,-MIL-PRF-19
17、500/478K 6 Dimensions Symbol Inches Millimeters Min Max Min Max A .136 .142 3.45 3.61 B .117 .123 2.97 3.12 C .007 .013 0.18 0.33 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The metallization consists of: D version: front (anode) - aluminu
18、m; back (cathode) - gold. E version: front (anode) - aluminum; back (cathode) - silver. F version: front (anode) - silver; back (cathode) - silver. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions JANC (JANHC and JANKC) die dimensions (D, E, a
19、nd F - versions). Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 7 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or reco
20、mmended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.
21、2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPAR
22、TMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil.or
23、from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this doc
24、ument takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
25、 furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, sy
26、mbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 for DO-4 and figure 2, 3, 4, and 5 (JANHC and JANKC). 3.4.1 Lead finish. Lead finish shall be
27、 solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. Polarity shall be in accordance with MIL-PRF-1
28、9500. The reversed units shall also be marked with an R following the last digit in the type number. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSMIL-PRF-19500/478K 8 3.6 Electrical performance characteristics. Unless otherwise specified herein, the el
29、ectrical performance characteristics are as specified in 1.3 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quali
30、ty and shall be free from other defects that will affect life, serviceability, or appearance. 4. QUALITY ASSURANCE PROVISIONS 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. C
31、onformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded
32、to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification 4.2.2 Screening JANHC
33、and JANKC. Screening shall be in accordance with appendix G of MIL-PRF-19500. As a minimum, die shall be 100 percent probed in accordance with table I, subgroup 2 herein for IR1and V(BR)1only. VF1and VF2shall be performed on a sample of ten pieces mounted on a DO-4 (or equivalent) package. Provided
34、by IHSNot for Resale-,-,-MIL-PRF-19500/478K 9 * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that
35、 exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTXV and JANTX level (1) 3b Surge, see 4.3.1. Surge, see 4.3.1. (2) 3c Thermal impedance (see 4.3.2 and 4.4.1). Thermal impedance (see 4.3.2 and 4.4.1). 4 Not applicable. N
36、ot applicable. 9 Not applicable. Not applicable. 10 Not applicable. Not applicable. (3) 11 VF2and IR1. VF2and IR1.12 Burn-in, see 4.3.3, method 1038 of MIL-STD-750, test condition A. t = 240 hours. Burn-in, see 4.3.3, method 1038 of MIL-STD-750, test condition A. (3) 13 Subgroups 2 and 3 of table I
37、herein; IR1 2.5 A dc or 100 percent of initial value, whichever is greater. VF2 +0.05 V dc (pk) change from initial value. Subgroup 2 of table I herein; IR1 2.5 A dc or 100 percent of initial value, whichever is greater. VF2 +0.05 V dc (pk) change from initial value. (1) Surge shall precede thermal
38、response. These tests shall be performed anytime after screen 3 and before screen 10. * (2) Thermal impedance need not be repeated for JANTX and JANTXV levels. (3) IR1measurement shall not be indicative of an open condition. * 4.3.1 Surge current. Surge current, see method 4066 of MIL-STD-750. * a.
39、IFSM= 400 A, six surges, tp= 8.3 ms or rectangular pulse of equivalent Irms. b. IO= 0 A, VRMS= 0 V, duty factor 1 percent minimum TA= +25C. Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 10 * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with meth
40、od 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, subgroup 4 herein. 4.3.3 Burn-in. Burn-in conditions for all quality levels are as follows: method 1038 of MIL-STD-750
41、, test condition A, TC= +125C; VR= 80 to 85 percent of rated VRdc (see 1.3). 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500 and tab
42、le I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with
43、table I, subgroup 2 and the applicable step and footnotes of table III herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 4066 TC= +100C; tp0.25 IO(see 4.5.2) 2,000 cycles. Provided by IHSNot for Resale-,-,-MIL-PRF-19500/478K 11 * 4.4.3 Group C insp
44、ection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I subgroup 2 and the applicable step of table III herein. Subgroup Me
45、thod Condition C2 2036 Terminal strength: Test condition A; weight = 10 pounds; t = 15 s. Bending stress: Test condition F, method B; weight = 3 pounds; t = 15 s. Lead torque: Test condition D1; torque = 10 ounce-inches; t = 15 s. Stud torque: Test condition D2; torque = 10 pound-inches; t = 15 s. *
46、 C5 4081 or RJC= 1.5C/W; tH 20 seconds; heating current (IH) rated IO; 3101 tMD 250 s; measurement current 10 mA IM 100 mA. C6 1036 IF 0.25 IO(see 4.5.2); 6,000 cycles, JANS only. C6 1038 Condition A, t = 1000 hours, TJ= +175C, VR= 80 percent of VRWM(pk) (see 1.3), JAN, JANTX and JANTXV only. * 4.4.
47、4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 and the applicable ste
48、p of table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 DC intermittent operation life. A cycle shall co
49、nsist of an “on“ period, when forward current is applied suddenly, not gradually, to the device for the time necessary to achieve an increase (delta) case temperature of +85C +15C, -5C followed by an “off“ period, when the current is suddenly removed for cooling, the case through a similar delta temperature. Auxiliary (forced) cooling is per
