1、 MIL-PRF-19500/505E 22 July 2009 SUPERSEDING MIL-PRF-19500/505D 10 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER, TYPES 2N6286 AND 2N6287, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of
2、the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are
3、 provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). 1.3 Maximum ratings at TC= +25C unless otherwise specified. Type PTRJCVCBOVCEOVEBOICIBTJand TSTGTC= +25C (1) TC= +100C W W C/W V dc V dc V dc A dc A dc C 2N6286 175 87.
4、5 0.855 -80 -80 -7 -20 -0.5 -65 to +175 2N6287 175 87.5 0.855 -100 -100 -7 -20 -0.5 -65 to +175 (1) Derate linearly at 1.16 W/C above TC +25C. AMSC N/A FSC 5961 INCH POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O
5、. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necess
6、ary to comply with this document shall be completed by 22 September 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 2 1.4 Primary electrical characteristics. Limit hFE2(1) VCE= -3 V dc IC= -10 A dc hFE3(1) VCE= -3 V dc IC= -2
7、0 A dc VCE(sat)1IC= -20 A dc IB= -200 mA dc VCE(sat)2IC= -10 A dc IB= -40 mA dc VBE(sat)IC= -20 A dc IB= -200 mA dc Switching tontoffMin Max 1,250 18,000 300 V dc -3.0 V dc -2.0 V dc -4.0 s 2 s 10 Limit CoboVCB= -10 V dc IE= 0 100 kHz f 1 MHz hfeVCE= -3 V dc IC= -10 A dc f = 1 kHz hfe VCE= -3 V dc I
8、C= -10 A dc f = 1 MHz Min Max pF 400 300 8 80 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recomme
9、nded for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 G
10、overnment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME
11、NT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/
12、 or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this
13、 document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 3 NOTES: 1. Dimensions are in
14、inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD 4. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the
15、emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1and LL. Diameter is uncontrolled in L1. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-3). Provided by IHSNot for
16、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 4 Dimensions Symbol Inches Millimeters Notes Min Max CD .875 22.23 3 CH .250 .360 6.35 9.14 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 5, 9 LL .312 .500 7
17、.92 12.7 5 L1.050 1.27 5, 9 MHD .151 .165 3.84 4.19 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1.205 .225 5.21 5.72 S1.655 .675 16.64 17.15 FIGURE 1. Physical dimensions (similar to TO-3) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens
18、e from IHS-,-,-MIL-PRF-19500/505E 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the q
19、ualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Inter
20、face and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-3) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisit
21、ion document (see 6.2). 3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The el
22、ectrical test requirements shall be the subgroups specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification
23、 of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-
24、19500 and herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II
25、herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 6 * 4.3 Screening. Screening shall be i
26、n accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurements JANTX and JANTXV levels
27、(1) 3c Thermal impedance method 3131 of MIL-STD-750 (see 4.3.2) 7 Optional 11 ICEX1and hFE112 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1 = 100 percent of initial value or 2 A dc, whichever is greater; hFE1= 40 percent of initial value 14 Required (1) Shall be performed anytime after temperatur
28、e cycling, screen 3a of 4.3 herein; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +162.5C 12.5C, VCE -10 V dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedanc
29、e. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. 4.4 Conformance inspection. Conformance inspection shall be
30、in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be
31、 conducted in accordance with the conditions specified for subgroup testing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition B3 1037 For solder die attach: VCB -10 V dc; TA
32、 +35C, 2,000 cycles. B3 1027 For eutectic die attach: TA +35C adjust PTto achieve TJ= +150C minimum, VCB -10 V dc. B5 3131 RJC= 0.855C/W (maximum). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 7 * 4.4.3 Group C inspection. Group
33、 C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Tension: Test condition A; weight = 10 lbs
34、; time = 15 s. C6 1037 For solder die attach: VCB -10 V dc; TA 35C, 6,000 cycles. C6 1026 For eutectic die attach: TA +35C adjust PTto achieve TJ= +150C minimum, VCB -10 V dc. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup t
35、esting in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements.
36、Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min
37、 Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector - emitter 2N6286 2N6287 3011 Bias condition D; IC= -100 mA dc; pulsed (see 4.5.1) V(BR)CEO-80 -100 V dc V dc Collector - emitter cutoff current 2N6286 2N6287 3041 Bi
38、as condition A; VBE= +1.5 V dc VCE= -80 V dc VCE= -100 V dc ICEX110 A Collector - emitter cutoff current 2N6286 2N6287 3041 Bias condition D VCE= -40 V dc VCE= -50 V dc ICEO-1.0 mA dc Emitter - base cutoff current 3061 Bias condition D; VEB= -7 V dc IEBO-2.5 mA dc Base emitter (nonsaturated) 3066 Te
39、st condition B; VCE= -3 V dc; IC= -10 A dc VBE-2.8 V dc Base - emitter voltage (saturated) 3066 Test condition A; IC= -20 A dc; IB= -200 mA dc; pulsed (see 4.5.1) VBE(sat)-4.0 V dc Collector - emitter saturated voltage 3071 IC= -20 A dc; IB= -200 mA dc; pulsed (see 4.5.1) VCE(sat)1-3.0 V dc Collecto
40、r - emitter saturated voltage 3071 IC= -10 A dc; IB= -40 mA dc; pulsed (see 4.5.1) VCE(sat)2-2.0 V dc Forward-current transfer ratio 3076 VCE= -3 V dc; IC= -1 A dc; pulsed (see 4.5.1) hFE11,500 Forward-current transfer ratio 3076 VCE= -3 V dc; IC= -10 A dc; pulsed (see 4.5.1) hFE21,250 18,000 Forwar
41、d-current transfer ratio 3076 VCE= -3 V dc; IC= -20 A dc; pulsed (see 4.5.1) hFE3300 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/505E 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-7
42、50 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High-temperature operation: TA= +150C Collector - emitter cutoff current 3041 Bias condition A; VBE= +1.5 V dc; ICEX2-5.0 mA dc 2N6286 VCE= -80 V dc 2N6287 VCE= -100 V dc Collector - emitter saturated voltage 3071 IC= -10 A dc; IB= -40 mA dc
43、; pulsed (see 4.5.1) VCE(sat)3-2.0 V dc Low-temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= -3 V dc; IC= -10 A dc; pulsed (see 4.5.1) hFE4150 Subgroup 4 Pulse response: Turn-on time 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2
44、. VCC= -30 V dc; IC= -10 A dc; IB= -40 mA dc ton2.0 s Turn-off time VCC= -30 V dc; IC= -10 A dc; IB1= IB2= -40 mA dc toff10 s Magnitude of common- emitter small-signal short-circuit forward- current transfer ratio 3306 VCE= -3 V dc; IC= -10 A dc; f = 1.0 MHz hfe 8 80 Small-signal short-circuit forwa
45、rd-current transfer ratio 3206 VCE= -3 V dc; IC= -10 A dc f = 1.0 kHz hfe300 Open circuit output capacitance 3236 VCB= -10 V dc; IE= 0; 100 kHz f 1 MHz Cobo400 pF See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1
46、9500/505E 10 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Safe operating area (continuous dc) 3051 TC= +25C; t = 1 s; 1 cycle; (see figure 3) Test 1 Test 2 VCE= -8.75 V dc; IC= -20 A dc VCE= -30 V dc; IC= -5.8 A dc Test
47、3 2N6286 VCE= -80 V dc; IC= -100 mA dc 2N6287 VCE= -100 V dc; IC= -100 mA dc Electrical measurements See table I, subgroup 2 Safe operating area (switching) 3053 Load condition C; (unclamped inductive load); (see figure 4) TA= +25C; Rs 0.1 ; tr+ tf 15 ns; duty cycle 2 percent Test 1 tp= 80 s; (vary
48、to obtain IC); RBB1 50 ; VBB1 -10 V dc; RBB2= ; VBB2= 0; IC= -20 A dc; VCC -50 V dc; The coil used shall provide a minimum inductance of 1 mH at 20 A. (For reference only; two coils in parallel (Super Electric Corporation type S16884 or equivalent).) Test 2 tp= 1 ms; (vary to obtain IC); RBB1 50 ; VBB1 -10 V dc; RBB2= ; VBB2= 0; IC= -500 mA dc; VCC -50 V dc; The coil used shall provide a minimum inductance of 100 mH at 500 mA. (For reference only; two coils in series, 80 mH and 20 mH windings (Triad C-48u or equivalent).) Electrical measurements See
