1、 MIL-PRF-19500/511J 12 August 2013 SUPERSEDING MIL-PRF-19500/511H 20 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N4261, 2N4261UB, 2N4261UBC, 2N4261UBN, and 2N4261UBCN JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC, JANTXVM, JANTXVD,
2、JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments a
3、nd Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product
4、 assurance are provided for each encapsulated device type. Two levels for unencapsulated die as specified in MIL-PRF-19500. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements. * 1.2 Physical dimens
5、ions. See figure 1 (TO-72), figure 2 (UB, UBC, UBN, and UBCN), and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. PTTA= +25C (1) RJA VCBOVCEOVEBOICTJTJand TSTGmW 200 C/mW 0.860 V dc 15 V dc 15 V dc 4.5 mA dc 30 C 200 C -65 to +200 * (1) Derate linearly 1.16 mW/C
6、above TA= +25C. AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the curre
7、ncy of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 12 November 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without li
8、cense from IHS-,-,-MIL-PRF-19500/511J 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE1(1) hFE2(1) hFE3(1) |hfe2| rb Cc Switching VCE= 1.0 V dc IC= 1 mA dc VCE= 1.0 V dc IC= 10 mA dc VCE= 1.0 V dc IC= 30 mA dc VCE= 10 V dc IC= 10 mA dc f = 100 MHz VCE= 4.0 V dc IC=
9、 5 mA dc f = 31.8 MHz tontoffMin Max 25 30 150 20 20 ps 60 ns 2.5 ns 3.5 VCE(sat)1IC= 1 mA dc IB= 0.1 mA dc VCE(sat)2IC= 10 mA dc IB= 1.0 mA dc VBE1IC= 1 mA dc VCE= 1 V dc VBE2IC= 10 mA dc VCE= 1 V dc CoboVCB= 4 V dc IE= 0 100 kHz f 1 MHz Min Max V dc 0.15 V dc 0.35 V dc 0.8 V dc 1.0 PF 2.5 (1) Puls
10、ed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While
11、every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards,
12、and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semicondu
13、ctor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue,
14、Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersede
15、s applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/511J 3 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500
16、 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbre
17、viations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500 and as follows: gsNoise source conductance. PoOscillator, power output. RBE. External resistance, base to emitter. UB and UBC . Surface mount case outlines (see figure 2). * UBN a
18、nd UBCN Surface mount case outlines (see figures 2). * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-72), figure 2 (UB, UBN, UBC, and UBCN), and figure 3 (JANHC and JANKC) herein. 3.4.1 Lead finish. Lead finish sh
19、all be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characte
20、ristics are as specified in 1.3, 1.4, and table I herein. 3.5.1 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical test requirements. The electrical test requirements shall be as specifi
21、ed in table I. * 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body of the UB, UBC, UBN, and UBCN package, but shall be retained on the initial container. The radiation hardened designator M, D, P, L, R, F, G, or H
22、shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or ap
23、pearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/511J 4 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28
24、 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) r
25、elative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are e
26、quivalent to x symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N4261 (TO-72). Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 5 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.
27、84 5 LC .100 TP 2.54 TP 7, 8 LD .016 .021 .406 .533 7, 8 LL .500 .750 12.70 19.05 7, 8 LU .016 .019 .41 .48 L1.050 1.27 L2.250 6.35 P .100 2.54 Q .040 1.02 5 TL .028 .048 .71 1.22 TW .036 .046 .91 1.17 R .007 .18 45 TP TO-72 Provided by IHSNot for ResaleNo reproduction or networking permitted withou
28、t license from IHS-,-,-MIL-PRF-19500/511J 5 * FIGURE 2. Physical dimensions, surface mount (UB, UBN, UBC and UBCN versions). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/511J 6 Dimensions Symbol Inches Millimeters Note Min Max Min Ma
29、x BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB only, 4 BH .046 .056 1.17 1.42 UBN only, 5 BH .055 .069 1.40 1.75 UBC only, 6 BH .055 .069 1.40 1.75 UBCN only, 7 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 3 PLS LL2 .014 0.356 3 PLS LS1.035 .039 0.89 0.99 LS2.071 .079
30、 1.80 2.01 LW .016 .024 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r2 .022 0.56 UB ICEX2= 100 percent of initial value or 1 nA dc, whichever is greater. hFE2= 15 percent of initial value. ICEX2and hFE2. 12 See 4.3.3. See 4.3.3, 80 hours min. 13 Subgroup 2 and 3 of table I herein; ICEX2= 100 percent of i
31、nitial value or 1 nA dc, whichever is greater. hFE2= 25 percent of initial value. Subgroup 2 of table I herein; ICEX2= 100 percent of initial value or 2 nA dc, whichever is greater. hFE2= 25 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do
32、not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX
33、requirements. 4.3.2 Thermal impedance (VBE measurements). The VBEmeasurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The VBElimit used in screen 3c and table I, subgroup 2 shall be set statist
34、ically by the supplier over several die lots and submitted to the qualifying activity for approval. 4.3.3 Power burn-in conditions. Power burn-in conditions are as follows: TA= room ambient in accordance with the general requirements of MIL-STD-750 (see 4.5). VCB= 10 V dc, PT= 200 mW. 4.4 Conformanc
35、e inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I here
36、in. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. See 4.4.2.2 for JAN
37、, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P
38、RF-19500/511J 10 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, 2,000 cycles, tON= tOFF= 3 minutes, PD(ON)= PDmax rated in accordance with 1.3; PD(OFF)= 0. B5 1027 VCB= 10 V dc, t = 1,000 hours minimum. PD= maximum rated PT(see 1.3),
39、TJ= +150C minimum, in addition, adjust TAto achieve TJ. n = 45, c = 0. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures d
40、uring CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc; power shall be applied and TAadjusted to achieve TJ= +150C minimum, using a minimum of PD= 75 percent of maximum rated PT
41、as defined in 1.3. n = 45 devices, c = 0. 2 1048 Blocking life: TA= +150C, VCB= 80 percent rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B in
42、spection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chos
43、en from an inspection lot that has been submitted to and passed table I, subgroup 2 conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may
44、 be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordan
45、ce with table I, subgroup 2 herein. Subgroup Method Condition * C2 2036 Test condition E; (not applicable for UB, UBC, UBN, and UBCN devices). C5 3131 See 1.3 RJA. C6 1026 VCB= 10 V dc; PT= 200 mW, time = 1,000 hrs, adjust TAto achieve TJ= +150C minimum. Not applicable to JAN, JANTX, and JANTXV leve
46、ls. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/511J 11 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procur
47、ed to the same specification which is submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing
48、 of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include the group D tests specified in table I
49、I herein. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose, or method 1017 of MIL-STD-750 for neutron fluence, as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other subgroups. Alternate package options may also be substituted fo
