1、 MIL-PRF-19500/512K 27 August 2013 SUPERSEDING MIL-PRF-19500/512J 23 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKC
2、2N4033, AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the perf
3、ormance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for
4、 radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure
5、1 (TO-18), figure 2 (TO-39), figures 3 and 4 (surface mount), and figures 5 and 6 (JANKC and JANHC) herein. * 1.3 Maximum ratings, unless otherwise specified TA= +25C.VCBOVCEOVEBOICTJand TSTGV dc 80 V dc 80 V dc 5.0 A dc 1.0 C -65 to +200 Types PTTA= +25C (1) (2) PTTC= +25C (1) (2) PTTSP(IS)= +25C (
6、1) (2) RJA (2) (3) RJC (2) (3) RJSP(IS) (2) (3) RJSP(AM) (2) (3) 2N4033 2N4029 2N4033UA 2N4033UB W 0.800 0.500 0.500 (4) 0.500 W 4 1 N/A N/A W N/A N/A 1.5 1.5 C/W 195 325 325 325 C/W 40 * 150 N/A N/A C/W N/A N/A 110 90 C/W N/A N/A 40 N/A (1) For derating, see figures 7, 8, 9, 10, and 11. (2) See 3.3
7、. (3) For thermal impedance curves, see figures 12, 13, 14, 15, 16, 17, and 18. * (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 and 16 for the UB package and use RJA. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on
8、this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.
9、dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 27 November 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 2 1.4 Primary electrical characteristics, un
10、less otherwise specified TA= +25C. Limits hFE1VCE= 5.0 V dc IC= 100 A dc hFE2VCE= 5.0 V dc IC= 100 mA dc hFE3VCE= 5.0 V dc IC= 500 mA dc hFE4VCE= 5.0 V dc IC= 1.0 A dc |hfe| f = 100 MHz VCE= 10 V dc IC= 50 mA dc Min Max 50 100 300 70 25 1.5 6.0 Limits VCE(SAT)2IC= 500 mA dc IB= 50 mA dc CoboVCB= 10
11、V dc IE= 0 100 kHz f 1 MHz tdtrtstfMin Max V dc 0.5 pF 20 ns 15 ns 25 ns 175 ns 35 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specificati
12、on or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are
13、listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contr
14、act. DEPARTMENT OF DEFENSE SPECIFICATIONS- MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil o
15、r from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this doc
16、ument takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 3 Dimensions Symbol Inches Millime
17、ters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7. 8 L2.250 6.35 7, 8 Q .040 1.02 5 TL .028 .048 0.71 1.22 3, 4 TW .036 .046 0.91
18、 1.17 3 R .010 0.25 10 P .100 2.54 45TP 45TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optio
19、nal within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods.
20、7. Dimension LU applies between L1and L2. Dimension LD applies between L2and minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance
21、 with ASME Y14.5M, diameters are equivalent to x symbology. 12. For “L” suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. FIGURE 1. Physical dimensions (type 2N4029) (TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
22、-,-,-MIL-PRF-19500/512K 4 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 Q
23、 .050 1.27 5 TL .029 .045 0.74 1.14 3, 4 TW .028 .034 0.71 0.86 3 R .010 0.25 10 P .100 2.54 45TP 45TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Di
24、mension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to
25、 tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radiu
26、s) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. For “L” suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. FIGURE 2. Physical dimensions (type 2N4033) (TO-39). Provided by IHSNot for ResaleNo re
27、production or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 5 Dimensions Dimensions Ltr Inches Millimeters Notes Ltr Inches Millimeter Notes Min Max Min Max Min Max Min Max A .061 .075 1.55 1.91 3 D2 .0375 BSC 0.952 BSC A1 .029 .041 0.74 1.04 D3 .155 3.94 B1 .022 .028 0.56 0.7
28、1 E .215 .225 5.46 5.72 B2 .075 REF 1.91 REF E3 .225 5.72 B3 .006 .022 0.15 0.56 5 L1 .032 .048 0.81 1.22 D .145 .155 3.68 3.9 L2 .072 .088 1.83 2.24 D1 .045 .055 1.14 1.39 L3 .003 0.08 5 NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Dimens
29、ion “A” controls the overall package thickness. When a window lid is used, dimension “A” must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturers option, from that shown on the drawing. *
30、 5. Dimensions “B3” minimum and “L3” minimum and the appropriately castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
31、 “B3” maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. * FIGURE 3. Physical dimensions, surface mount (UA version). Provided by IHSNot for ResaleNo reproduction or networking permitted wit
32、hout license from IHS-,-,-MIL-PRF-19500/512K 6 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1.036 .040 0.91 1.02 BL .115 .128 2.92 3.25 LS2.071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61
33、 CL .128 3.25 r .008 .203 CW .108 2.74 r1 .012 .305 LL1 .022 .038 0.56 0.97 r2 .022 .559 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Co
34、llector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions, surface mount UB version. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 7
35、 NOTES: Die size: .030 x .030 inch (0.762 x 0.762 mm). Die thickness: .008 .0016 inch (0.2032 0.04064 mm). Base pad: .005 inch diameter (0.127 mm). Emitter pad: .005 inch diameter (0.127 mm). Back metal: Gold, 6,500 1,950 . Top metal: Aluminum, 22,500 2,500 . Back side: Collector. Glassivation: SiO2
36、, 7,500 1,500 . FIGURE 5. JANHC and JANKC (A-version) die dimensions. B E Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 8 1. Chip size.024 x .026 inch .002 inch (0.61 x 0.66 millimeters). 2. Chip thickness.010 .0015 inch nominal
37、(0.254 x 0.038 millimeters). 3. Top metal.Aluminum 15,000 minimum, 18,000 nominal. 4. Back metalGold 3,500 minimum, 5,000 nominal. 5. Backside.Collector. 6. Bonding pad.B = .004 x .006 inch (0.102 x 0.152 millimeters). E = .004 x .0055 inch (0.102 x 0.140 millimeters). FIGURE 6. JANHC and JANKC (B-v
38、ersion) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/512K 9 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furni
39、shed under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and d
40、efinitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB . Printed circuit board. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSP(IS). Thermal resistance junction to solder pads (infinite sink mount to PCB). TSP(AM)Temperature of solde
41、r pads (adhesive mount to PCB). TSP(IS)Temperature of solder pads (infinite sink mount to PCB). UA, UB . Surface mount case outlines. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, 3, 4, 5, and 6 herein. 3.4.1 Lea
42、d finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical pe
43、rformance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall
44、immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearan
45、ce. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, table I and table II). 4.2 Qualification inspection. Qualification inspect
46、ion shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance
47、of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P
48、RF-19500/512K 10 * 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) (2) 3c Thermal impedance method 3131 of MIL-STD-750 (see 4.3.3). Thermal impedance method 3131 of MIL-STD-750 (see 4.3.3). 9 ICBO2and hFE2Not applicable 11 ICBO2and hFE2ICBO
