1、 MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JANTX, JANTXV, AND JANHC This specification is approved for use by the all Departments and Agencies
2、 of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three
3、 levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (DO-5) and figure 2 (die). 1.3 Maximum ratings. Unless otherwise specified
4、TA= 25C. Type VRRMand VRWM(1) VRSM VR(1) IFM(2) TC= +115C IO(3) TC= +115C IFSMTJTSTG Max RJC 1N6392 V(pk) 45 V(pk) 54 V dc 45 A dc 60 A dc 54 A (pk) 1,000 C -55 to +175 C/W 1.0 (1) Full rated VRRMand VRWMis applicable over the range of TC= -55C to + 173C for IFM= 0. Full rated VRis applicable over t
5、he temperature range of TC= -55C to +166C. When VR= 45 V dc and TC= +166C, then TJ= +175C. (2) Average current with a 50 percent duty cycle square wave including reverse amplitude equal to the magnitude of full rated VRWM. Derate linearly at 1.09 A dc/C for TC +115C. (3) Average current with an appl
6、ied sine wave peak value equal to the magnitude of full rated VRWM. For temperature-current derating curves, see figure 3. 1.4 Unless otherwise noted, primary electrical characteristics at TC= +25C. Type Max VFM1 IFM= 120 A (pk) Max VFM3IFM= 10 A (pk) Max IRM VRM= 45 V (pk) Max CTVR= 5 V dc TJ= +25C
7、 TJ= +175C 1N6392 V (pk) 0.82 V (pk) 0.51 mA (pk) 2.0 mA (pk) 200 pF 3,000 AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil.
8、 Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INC
9、H-POUND Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Units must not be damaged by torque of 30 inch-pound applied to .25-28 UNF-2B n
10、ut assembled on thread. 4. Length of incomplete or undercut threads of UD. 5. Maximum pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference (FED-STD-H28, “Screw-Thread Standards for Federal Services”). 6. A chamfer or undercut on one or both ends of the hex po
11、rtion is optional; minimum base diameter at seating plane .600 inch (15.24 mm). 7. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimensions C and C1shall be flat. 8. The anode is connected to terminal 1. The cathode is connected to
12、terminal 2. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (DO-5). Ltr Dimensions Notes Inches Millimeters Min Max Min Max C .375 9.53 7 CD .667 16.94 CH .450 11.43 C1 .025 .080 0.64 2.03 HF .669 .688 17.00 17.48 HT1 .115 .200 2.92 5.08 HT2
13、.060 1.52 6 OAH .750 1.00 19.05 25.40 SD 5 SL .422 .453 10.72 11.51 SU .090 2.29 4 UD .220 .249 5.59 6.32 T .140 .175 3.56 4.45 DO-5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 3 Ltr Dimensions Inches Millimeters Min Max Min Ma
14、x A .210 .220 5.38 5.46 B .190 .210 5.03 5.08 C .012 .013 .30 .33 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The metallization characteristics of the die are: Anode (front) Cathode (back) Ag Ag 4. In accordance with ASME Y14.5M, diameters are equiva
15、lent to x symbology. * FIGURE 2. JANHCA die dimensions (A version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of
16、 this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specifie
17、d requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein
18、. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. *
19、(Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the c
20、ontract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General.
21、 The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by amanufacturer authorized by the qualifying activity for listing on the applicable qualified manufa
22、cturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be asspecified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified i
23、n MIL-PRF-19500 and figures 1 and 2 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Diode construction. These devices shall
24、 be constructed in a manner and using material which enable thediodes to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5.1 Polarity. Devices shall have the cathode electrically connected to the stud. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by
25、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 5 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test require
26、ments. The electrical test requirements shall be specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classifi
27、cation of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as s
28、pecified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II here
29、in that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC devices. JANHC devices shall be qualified in accordance with MIL-PRF-19500. * 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in ac
30、cordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of MIL-PRF-19500) Measurement JANTXV and JANTX levels 3a Condit
31、ion C (1) 3b Surge, see 4.3.2 3c Thermal impedance, see 4.3.3 4 Not applicable 9 Not applicable 10 Not applicable (2) 11 Reverse energy test (see 4.5.2), followed by VFM1and IRM1of table I, subgroup 2. 12 Burn-in, method 1038 of MIL-STD-750, test condition A; see 4.3.4. (3) 13 FM1and IRM1of table 1,
32、 subgroup 2; VFM1= 0.05 V (pk), IRM1= 100 percent or 5 mA dc, whichever is greater. Scope display evaluation (see 4.5.3). (1) Surge current shall precede thermal response. These tests shall be performed anytime after screen 3a and before screen 10. (2) IRM1shall not be indicative of an open conditio
33、n. (3) All devices shall be subjected to the scope display evaluation test, and reverse energy test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 6 4.3.1 Screening (JANHC). Screening of JANHC die shall be in accordance with MIL-
34、PRF-19500. 4.3.2 Surge current. Surge current shall be performed in accordance with method 4066 of MIL-STD-750, with the following conditions: IFSM= 1,000 A, 6 surges, tp= 8.3 ms, 1/2 sine wave, or rectangular pulse of equivalent IRMS, IO= 0, VRWM= 0, duty factor one percent minimum, TA= 25C. * 4.3.
35、3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 300 s max. See table II, subgr
36、oup 4 herein. * 4.3.4 Burn-in. Method 1038 of MIL-STD-750, test condition A. TJ= 150C minimum, VR = 36V dc, IO= 0, t = 48 hours. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance
37、 with MIL-PRF-19500, and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accor
38、dance with table I, subgroup 2 herein. Subgroup Method Condition B3 1048 TJ= 150C minimum, VR= 36 V dc. IO= 0, t = 48 hours. B5 4081 See 4.3.3. B7 4066 IFSM= 1,000 A (pk); VRM= 45 V (pk), IO= 45 A dc; 10 surges of 8.3 ms each at 1 minute intervals; 100C TC 125C; 22 devices, c = 0. * 4.4.3 Group C in
39、spection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condit
40、ion A, 15 lbs, t = 15 s. Test condition F (method B), 15 pounds, t = 15 s. Test condition D1, 3 inch-pound, t = 15 s. Test condition D2, 30 inch-pound, t = 15 s. C5 4081 RJC= 1.0C/W maximum in accordance with 4.3.3 except tH= 25 s (minimum), n = 22, c = 0. C6 1048 TJ= 150C minimum, VR= 36 V dc. IO=
41、0. C6 1037 Operational power cycling, IF= 50 A dc, TC (low)= +40C +0C, -15C; TC (high)= 115C +5C, -0C; 6,000 cycles; 22 devices, c = 0, (see 4.5.5). 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and the conditions for subgroup testing in table II he
42、rein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 7 4.5 Methods of inspection. Methods of inspection shall be as specified in appropri
43、ate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Peak reverse energy test. The peak reverse energy test is to be performed as on figure 4. The Schottky rectifier under test must be capable of absorbing the
44、 reverse energy, as defined, and meet the electrical requirements of table I, subgroup 4 herein. 4.5.3 Scope display evaluation. A curve trace visual display of the reverse characteristics (voltage versus current) shall be made using a calibration of 10 mA per division vertical sensitivity, and 10 V
45、 dc per division horizontal sensitivity. Increase the reverse voltage until the reverse current reaches 50 mA minimum to 70 mA maximum. Observe the curve characteristics. Any device with an erratic pattern, such as double trace, other than capacitance effects, intermittence, discontinuities other th
46、an zener noise at the knee of the curve, or shorts shall be removed from the lot. Time limit for this test shall be 5 seconds minimum. This test shall be the last test performed on the device in the 100 percent screening tests. The percent defective result for evaluation against the percent defectiv
47、e allowed (PDA) shall be determined prior to the results of this test. 4.5.4 Reverse current at peak reverse voltage, alternate test. The reverse current at peak reverse voltage test requirement may be satisfied by performing the reverse energy test of 4.5.2 and measuring breakdown voltage to ensure
48、 VBR 54 V (pk) with IRM= 2.0 A (pk). * 4.5.5 DC intermittent operation life. Method 1037 of MIL-STD-750. One complete cycle for this test shall consist of the following two steps: Step 1, heat the case to the TC(high) specified by passing the specified forward current through the diode under test. T
49、he reverse voltage shall be only enough to permit the reverse current to flow, and in any event should be a maximum of 5 V dc. Step 2, remove the applied current and allow the case temperature to cool to the TC(low) specified. No time limit is applicable to the steps, but the cycling must be continuous until the required number of cycles has been completed. It is permissi
