1、 MIL-PRF-19500/570E 26 August 2010 SUPERSEDING MIL-PRF-19500/570D 11 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC,AND JANKC This specification is approved for use
2、by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for a logic-level N-channel, enhancement
3、-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are also provided for each unencapsulated device type. See 6.4 or JANHC and JANKC die versions. * 1.2 Physical dimensions. See figure 1,
4、TO-205AF (formerly TO-39) and figure 2 for JANHC and JANKC die dimensions. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) PTRJC(2) VDSVDGVGSID1(3) ID2(3) ISIDMTJTC= +25C TA= +25C TC = +25C TC = +100C and TSTGW W C /W V dc V dc V dc A dc A dc A dc A(pk) C 2N6901 2N6903 8.33 8.3
5、3 0.6 0.6 15.0 15.0 100 200 100 200 10 10 1.69 0.98 1.07 0.62 1.69 0.98 5 4 -55 to +150 (1) Derated linearly by 0.067 W/C for TC +25C. (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by internal construction and may be limit
6、ed by pin diameter: AMSC N/A FSC 5961 INCH - POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. * Comments, suggestions, or questions on this document should be addressed to DLA
7、Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. Provided by IHSNot for
8、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 2 1.4 Primary electrical characteristics. Unless otherwise specified, at TC= +25C. Type Min V(BR)DSS VGS= 0 V VGS(th)1 VDS VGSMax IDSS1 VGS= 0 Max rDS(on)(1) VGS= 5 V dc ID= 1 mA ID= 1 mA VDS= 80 percent o
9、f rated VDSTJ= +25C at ID1TJ= +150C at ID2 V dc V dc A dc Ohms Ohms 2N6901 2N6903 100 200 Min 1.0 1.0 Max 2.0 2.0 1.0 1.4 3.65 2.9 8.65 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This s
10、ection does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents
11、 cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specifie
12、d, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents ar
13、e available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a con
14、flict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking
15、 permitted without license from IHS-,-,-MIL-PRF-19500/570E 3 FIGURE 1. Physical dimensions for TO-205 AF. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 4 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8
16、.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP LD .016 .021 0.41 0.53 8,9 LL .500 .750 12.70 19.05 8,9 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 6 Q .050 1.27 5 TL .029 .045 0.74 1.14 4 TW .028 .034 0.71 0.86 3 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1.
17、 Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond radius(r) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. Dimension CD shall not vary more than .010 (
18、0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 8. LU applies between L1and
19、 L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. Radius(r) applies to both inside corners of tab. 11. Drain is electrically connected to the case. 12. Pin out: 1- source, 2 - gate, 3 - drain (case). 13. In accordance with ASME Y14
20、.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-205 AF - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 5 2N6901 Dimensions - 2N6901 Ltr Inches Millimeters Min Max Min Max A .056 .062
21、1.42 1.58 B .044 .051 1.12 1.30 C .012 .016 .30 .41 D .006 .010 .15 .25 E .010 .014 .25 .36 F .015 .019 .38 .48 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics
22、of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .015 inch (0.38 mm) .001 inch (0.025 mm). * FIGURE 2 . JANHCA and JANKCA (A-version) die dimensions for 2N6901 Provided by IHSNot for ResaleNo reproducti
23、on or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactu
24、red by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and
25、as follows: nC nano Coulomb * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-205 AF) and figure 2 (JANHC and JANKC die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-
26、750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteri
27、stics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Electrostatic discharge (ESD) protection. The devices covered by this specification require electrostatic discharge protection (see 3.8.1).
28、 3.8.1 Handling. Metal oxide semiconductor (MOS) devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.8). a. Devices should be handled on benches with conductive handling devices. b
29、. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised durin
30、g test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be
31、 free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 7 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are cl
32、assified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E
33、inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shal
34、l be performed on the first inspection lot of this revision to maintain qualification. * 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 8 4.3 Scre
35、ening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see,
36、table E-IV of MIL-PRF-19500) Measurement (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.2) Gate stress test (see 4.3.2) (3) Method 3470 of MIL-STD-750, (see 4.3.3) optional Method 3470 of MIL-STD-750, (see 4.3.3) optional (3) 3c Method 3161 of MIL-STD-750, (see 4.3.4) Metho
37、d 3161 of MIL-STD-750, (see 4.3.4) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1 IGSSF1= 20 nA dc or 100 perc
38、ent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 0.2 A dc or 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)112 Method 1042 of MIL-STD-750, test conditi
39、on A, t = 240 hours Method 1042 of MIL-STD-750, test condition A or t = 48 hours minimum at+175C minimum. 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 0.2
40、 A dc or 100 percent of initial value, whichever is greater rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever
41、is greater. IDSS1= 0.2 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDS
42、S1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/570E 9 * 4.3.1 Screening
43、(JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100-percent probed in accordance with table I, subgroup 2. 4.3.2 Gate stress test. Apply VGS= 15 V min. for t = 250 s min. 4.3.3 Unclamped inductive switching. a. Peak current, IDrated ID1. b. P
44、eak gate voltage, VGS. 10 V. * c. Gate to source resistor, RGS25 VGS,ID= 1.0 mA dc VGS(th)20.5 V dc Gate current 3411 VGS= +10 V dc and -10 V dc; VDS= 0; bias condition C IGSS2200 nA dc Drain current 2N6901 2N6903 3413 Bias condition C, VGS= 0 V VDS= 80 V dc VDS= 160 V dc IDSS250 A dc Static drain t
45、o source on-state resistance 2N6901 2N6903 3421 VGS= 5 V dc, pulsed (see 4.5.1) ID= 1.07 A dc ID= 0.62 A dc rDS(on)22.6 7.7 Low temperature operation: TC= TJ= -55C Gate to source voltage (threshold) 3403 VDS VGS;ID= 1.0 mA dc VGS(th)33.0 V dc Subgroup 4 Switching time test 3472 ID= rated ID2,(see 1.
46、3); VGS= 5 V dc, gate drive impedance = 25 Turn-on delay time 2N6901 2N6903 VDD= 50 V dc VDD= 100 V dc td(on)25 ns Rise time 2N6901 2N6903 VDD= 50 V dc VDD= 100 V dc tr80 ns See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
47、,-MIL-PRF-19500/570E 13 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 - Continued Turn-off delay time 2N6901 2N6903 VDD= 50 V dc VDD= 100 V dc td(off)45 40 ns ns Fall time 2N6901 2N6903 VDD= 50 V dc VDD= 100 V dc tf80 ns Su
48、bgroup 5 Safe operating area (SOA) test 3474 See figure 4 VDS= 80 percent of rated VDSand VDS 200 V max High voltage dc SOA tp= 1 ms Electrical measurements See table I, subgroup 2 Single pulse unclamped inductive switching 3470 See 4.3.3; c = 0, 116 devices Electrical measurements See table I, subgroup 2 Subgroups 6 Not applicable Subgroup 7 Gate charge 3471 Condition A or B On-state gate charge 2N6901 2N6903 Qg(on)5 5 nC nC See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
