1、 MIL-PRF-19500/578M 24 June 2013 SUPERSEDING MIL-PRF-19500/578L 19 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2, 1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N
2、6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This
3、specification covers the performance requirements for switching diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figures 1 (DO-35), 2 (U, US), 3 (UB), 4 (UB2), 5, and 6. 1.3 Maximum ratings. Unless otherwise spec
4、ified TA= +25C. Types VBRVRWMIO(PCB)TA=75 (1) (2) IFSMtp= 1/120 s RJL L = .375 inch (9.53 mm) (1) (2) RJECL = 0 (1) RJA(PCB)(2) RJSP (1) (3) TSTGpads for U, US = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) l
5、ong, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included, is measured at IO= 300 mA dc. (3) RJSPrefers to thermal resistance from junction to the solder pads of the UB package. AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this documen
6、t should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . Th
7、e JANS1N4148-1 is no longer qualified and is superseded by JANS1N6642. See 6.4. The documentation and process conversion measures necessary to comply with this document shall be completed by 24 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
8、IHS-,-,-MIL-PRF-19500/578M 2 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA= +25C. Types (1) VF1IF= 10 mA VF2IR1VR =20 V IR2VR =VRWMIR3VR= 20 V TA= +150C IR4VR= VRWMTA= +150C tfrIF= 200mA trrIRM= IF= 10 mA CT1VR= 0 V dc V dc nA dc nA dc A
9、 dc A dc ns ns pF 1N6638, 1N6638U, 1N6638US 0.8 1.1 (2) 35 500 50 100 20 4.5 2.5 1N6642, 1N6642U, 1N6642US, 1N6642UB, 1N6642UB2, 1N6642UBCA, 1N6642UB2R, 1N6642UBD, 1N6642UBCC 0.8 1.2 (3) 25 500 50 100 20 5.0 5.0 1N6643, 1N6643U, 1N6643US 0.8 1.2 (3) 50 500 75 100 20 6.0 5.0 (1) Suffix “U“ devices ar
10、e structurally identical to the suffix “US“ devices. (2) IF= 200 mA. (3) IF= 100 mA. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specifica
11、tion or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they ar
12、e listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or con
13、tract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or
14、 from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this docu
15、ment takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 3 Symbol Dimensions Notes Inches Mi
16、llimeters Min Max Min Max BD .056 .080 1.42 2.03 2 BL .130 .180 3.30 4.57 LD .018 .022 0.46 0.56 3 LL 1.00 1.50 25.40 38.10 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimension BD shall be measured at the largest diameter. 3. The specified lead diamete
17、r applies in the zone between .050 inch (1.27 mm) from the diode body to the end of the lead. Outside of this zone lead shall not exceed BD. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. TYPES 1N6638, 1N6642, AND 1N6643. FIGURE 1. Physical dimensions (DO-35). Provided b
18、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .070 .085 1.78 2.16 BL .165 .195 4.19 4.95 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. Millimeters are give
19、n for general information only. 2. Dimensions are pre-solder dip. 3. U-suffix parts are structurally identical to the US-suffix parts. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. TYPES 1N6638U, 1N6642U, AND 1N6643U, 1N6638US, 1N6642US, AND 1N6643US FIGURE 2. Physical
20、dimensions of surface mount family. US Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 5 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039
21、 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. Millimeters are given for general information on
22、ly. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. Dimensions are pre-solder dip. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions, surface mount (UB version).UB 1N6642
23、UBCA 1N6642UBD 1N6642UB 1N6642UBCC 2 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 6 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS .071 .079
24、1.80 2.01 BL .115 .128 2.92 3.25 LW .016 .024 0.41 0.61 BW .085 .108 2.16 2.74 r .008 TYP 0.20 TYP CL .128 3.25 r1 .012 TYP 0.30 TYP CW .108 2.74 r2 .022 TYP 0.56 TYP LL1 .022 .038 0.56 0.96 r3 .008 TYP 0.20 TYP LL2 .017 .035 0.43 0.89 r4 .012 TYP 0.30 TYP NOTES: 1. Dimensions are in inches. Millime
25、ters are given for general information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. Pad 4 = shielding, connected to the lid. 4. Dimensions are pre-solder dip. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensi
26、ons, surface mount (2 pin UB version). POLARITY UB2 1N6642UB2 1N6642UB2R Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 7 Ltr Dimensions Inches Millimeters Min Max Min Max A .014 .018 0.360 0.460 B .005 .007 0.120 0.180 C .008 .01
27、2 0.20 0.30 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al Back (cathode): Au Al thickness: 25,000 minimum. Gold thicknes
28、s: 4,000 minimum. Chip thickness: .010 inches (0.25 mm) .002 inches (0.05 mm). FIGURE 5. Physical dimensions JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 8 Ltr Dimensions Inches Millimeters Min Max Min Max
29、 A .0130 .0170 0.330 0.432 B .0059 .0061 0.150 0.155 C .008 .012 0.20 0.30 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al
30、 Back (cathode): Au Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thickness: .010 inches (0.25 mm) .002 inches (0.05 mm). * FIGURE 6. Physical dimensions, JANHCB and JANKCB die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-
31、PRF-19500/578M 9 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity
32、for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical d
33、imensions shall be as specified in MIL-PRF-19500, and on figure 1, figure 2, figure 3 (UB), figure 4 (UB2), figure 5(die), and figure 6 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it sh
34、all be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be constructed in a manner and using materials which enable the diodes to meet the applicable requirements of MIL-PRF-19500 and this document. a. All devices except UB and UB2 versions shall be of m
35、etallurgically bonded, thermally matched, non-cavity, double-plug construction in accordance with the requirements of category I (see MIL-PRF-19500). b. The UB devices shall be eutectically mounted and wire bonded in a ceramic package. c. The U and US version shall be structurally identical to the a
36、xial leaded versions except for end-cap lead attachment. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as
37、 specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting col
38、or band to denote the cathode end. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The part number may be reduced to J6638, JX6638, JV6638, or JS6638. No color coding shall be permitted for part numbering. 3.7.1 Marking of U and US versions. U and US d
39、evices shall be marked with a cathode band as a minimum, or a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. For U and US versions only, all marking may be omitted from the device except for the cathode marking. At the option of the manufac
40、turer, U and US devices may include laser marking on an end-cap, to include part number and lot date code for all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated as J, JX, JV, or JS, respectively. (For example:
41、 The part number may be reduced to JS6642). All marking which is omitted from the body of the device, except for polarity and serial numbers, shall appear on the initial container. 3.7.2 UB devices. UB and UB2 packages do not require polarity marking. 3.8 Workmanship. Semiconductor devices shall be
42、processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/578M 10 4. VERIFICATION 4.1 Classification
43、 of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specifi
44、ed herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of
45、the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV,and JANTX levels
46、 only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) JAN
47、S level JANTXV and JANTX level 2 Not required Not required 3b (1) 3c Not applicable Thermal impedance (see 4.3.3) Not applicable Thermal impedance (see 4.3.3) 4 Not applicable Not applicable 5 Not applicable for axial leaded parts Not applicable 6 Not applicable Not applicable 9 IR1Not applicable 10
48、 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A 11 VF2, IR1, and VBR; IR115 nA dc or 100 percent of initial value whichever is greater. VF2and IR112 Required, see 4.3.2 Required, see 4.3.2 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of initial reading or 15 nA dc, whichever is greater. VF2 0.030 V dc (scope display, see 4.5.3). Subgroup 2 of table I herein; IR1 100 percent of initial reading or 15 nA dc, whichever is greater. VF2 0.030 V dc (scope display, see 4.5.3). (1) Shall be performed anytime after temperatu
