1、 MIL-PRF-19500/634D 6 December 2013 SUPERSEDING MIL-PRF-19500/634C 12 September 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR This specification is approved for us
2、e by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOS
3、FET, radiation hardened power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (TO-254). 1.3 Maximum ratings. TA= +25C, unless otherwise spec
4、ified. Type PT(1) TC= +25C PTTA= +25C VDSVDGVGSRJCMax ID1(2) (3) TC= +25C ID2TC= +100C ISIDMTJand TSTGVISO 70,000 ft. altitude 2N7405 2N7406 2N7407 2N7408 W 125 W 50 V dc 100 200 250 500 V dc 100 200 250 500 V dc 20 C/W 1.00 1.00 1.00 1.00 A dc 25 24 18 9 A dc 20 15 12 6 A dc 25 24 18 9 A (pk) 75 72
5、 54 27 C -55 to +150 V dc N/A N/A 250 500 (1) Derate linearly 1 W/C for TC +25C. (2) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by pin diameter: (3) See figure 2, maximum drain current graphs. AMSC N/A FSC 5961 INCH-PO
6、UND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the curre
7、ncy of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be completed by 6 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
8、nse from IHS-,-,-MIL-PRF-19500/634D 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0 mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VGS= 80 percent of rated VDSMax rDS(on)(1) VGS= 12V IAS = IDMTJ= +25C at ID2TJ= +125C at ID22N7405 2N7406 2N7407 2N7408 V dc 10
9、0 200 250 500 V dc Min Max 1.5 4.0 A dc 25 0.07 0.11 0.17 0.60 0.105 0.189 0.306 1.20 A (pk) 75 72 54 27 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documen
10、ts cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 o
11、f this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these document
12、s are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/q
13、uicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this docume
14、nt takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/634D 3 Dimensions Ltr Inches Millimeters M
15、in Max Min Max BL .530 .550 13.46 13.97 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 TYP 3.81 TYP MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Sour
16、ce Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. Die to base is BeO isolated, terminals to case ceramic (AL2O3) isolated. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. F
17、IGURE 1. Physical dimensions (similar to TO-254). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/634D 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qu
18、alification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abb
19、reviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS. Rated avalanche current, non-repetitive. nC . nano coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (s
20、imilar to TO-254) herein. 3.4.1 Lead finish and material. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). Lead material shall be Kovar or Alloy 52; a copp
21、er core or plated core is permitted. 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain
22、precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools and personnel handling devices. c. Do not handle device
23、s by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h.
24、 Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.7 Electrical test require
25、ments. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life,
26、 serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/634D 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspectio
27、n (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E quali
28、fication. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein shall be performed on the firs
29、t inspection lot of this revision to maintain qualification. * 4.2.1.1 Single Event Effects(SEE). SEE shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the
30、verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifyin
31、g or acquiring activity. * 4.3 Screening (JANS only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Scre
32、en (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS (3) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, (see 4.3.3) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein. 10 Method 1042 of MIL-STD-750, test condition B 11 IGSSF1,
33、IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. 12 Method 1042 of MI
34、L-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 pe
35、rcent of initial value. VGS(TH)1 = 20 percent of initial value. 17 For TO-254 packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGS
36、SR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime before screen 9. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/634D 6 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse
37、 avalanche energy (EAS). a. IAS= IDM.b. L = 0.1 mH. c. EAS= 1/2 LIAS2. d. VDD= 50 V to 150 V dc. e. Initial junction temperature = +25C, -5C, +10C. 4.3.3 Thermal response (VSDmeasurement). The delta VSDmeasurement shall be performed in accordance with method 3161 of MIL-STD-750. The delta VSDconditi
38、ons (IHand VH) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply: a. Measuring current (IM)10 mA. b. Drain heating current
39、 (IH) .4 A. c. Heating time (tH).100 ms. d. Drain-source heating voltage (VH)25 V. e. Measurement time delay (tMD) .30 - 60 s. f. Sample window time (tSW) 10 s maximum. * 4.3.4 Dielectric withstanding voltage. a. Magnititude of test voltage900 V dc. b. Duration of application of test voltage15 secon
40、ds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conf
41、ormance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19
42、500/634D 7 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500, and as follows. End-point electrical measurements shall be in accordance with the applicable steps of table IV herein. S
43、ubgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 SEM. B4 1042 Intermittent operation life, condition D. No heat sink nor or forced-air cooling on the device shall be permitted during the on cycle. tON= 30 seconds minimum. B5 1042 Accelerated steady-state reverse bias, condition
44、 A, VDS= rated; TA= +175C; t = 120 hours, minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C; t = 24 hours. B5 2037 Bond strength, test condition A. B6 3161 Thermal resistance, see 4.5.2. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordan
45、ce with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. Subgroup Method Condition C2 2036 Terminal strength, test condition A
46、, weight = 10 lbs., t = 15 sec. C5 3161 See 4.5.2. C6 1042 Test condition D; 1 cycle = 30 sec. min. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.4.1 Design parameters. Not tested on a per lot basis. Design s
47、hall be such that the devices shall be capable of meeting the requirements herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurem
48、ents (end- points) and delta requirements shall be in accordance with the applicable steps of table IV herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/634D 8 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. T
