1、 MIL-PRF-19500/655E 14 February 2012 SUPERSEDING MIL-PRF-19500/655D 30 April 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR
2、AND F This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirem
3、ents for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (
4、IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (surface mount). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2 (3) (4) TC= +100C ISIDM (5) TJand TSTG2N7424U 2N7425U 2N7426U W 300
5、 300 300 W 2.5 2.5 2.5 C/W 0.42 0.42 0.42 V dc -60 -100 -200 V dc -60 -100 -200 V dc 20 20 20 A dc -48 -38 -29 A dc -30 -24 -18 A dc -48 -38 -29 A (pk) -192 -152 -108 C -55 to +150 (1) Derate linearly by 2.4 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula deriv
6、es the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Mar
7、itime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https/assist.daps.dla.mil/. The documentation and process conversion
8、 measures necessary to comply with this revision shall be completed by 14 May 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/655E 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= -1.0mA dc VGS(TH)
9、1VDS VGSID= -1.0 mA dc Max IDSS1VGS= 0 VDS= 80% of rated VDSMax rDS(on)(1) VGS= -12V, ID= ID2EAS TJ= +25C TJ= +150C 2N7424U 2N7425U 2N7426U V dc -60 -100 -200 V dc Min Max -2.0 -4.0 -2.0 -4.0 -2.0 -4.0 A dc -25 -25 -25 0.045 0.068 0.154 0.100 0.150 0.360 mJ 500 500 500 (1) Pulsed (see 4.5.1). 2. APP
10、LICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been
11、made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The fol
12、lowing specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General
13、Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Bu
14、ilding 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersede
15、s applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/655E 3 Symbol Dimensions Inches Millimeters Min Max Min Max BL .685 .695 17.40 17.65 BW .520 .530 13.21 13.
16、46 CH .142 3.61 LH .010 .020 0.25 0.51 LW1 .435 .445 11.05 11.30 LW2 .135 .145 3.43 3.68 LL1 .470 .480 11.94 12.19 LL2 .152 .162 3.86 4.11 LS1 .240 BSC 6.10 BSC LS2 .120 BSC 3.05 BSC Q1 .035 0.89 Q2 .050 1.27 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters a
17、re given for information only. 3. The lid shall be electrically isolated from the drain, gate, and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration. Provided by IHSNot for ResaleNo reproduction or networking permitted without
18、license from IHS-,-,-MIL-PRF-19500/655E 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by
19、 the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanch
20、e current, nonrepetitive nC .nano coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (SMD2) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Whe
21、re a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to av
22、oid damage due to the accumulation of static charge. However, the following handling practices are recommended. a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools and personnel handling devices. c. Do not handle devices by the leads. d. Store de
23、vices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to
24、 source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requiremen
25、ts shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provi
26、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/655E 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3).
27、c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qu
28、alification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualificat
29、ion. * 4.2.2 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. Electrical measurements (end-points) shall be in accordance with table III. Provided by IHSNot for ResaleNo reproduction or networking permitte
30、d without license from IHS-,-,-MIL-PRF-19500/655E 6 * 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I her
31、ein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750 (see 4.3.2), EAStest Method 3470 of MIL-STD-750 (see 4.3.2), EAStest (3) 3c Method 3161 of M
32、IL-STD-750 (see 4.3.3) Method 3161 of MIL-STD-750 (see 4.3.3) 9 IGSSF1, IGSSR1, IDSS1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein: IGSSF1= 20 nA dc or 100 percent o
33、f initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A M
34、ethod 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rD
35、S(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, wh
36、ichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. * (3) Shall be performed anytim
37、e after temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/655E 7 4.3.1 Gate stress test. Apply VGS= -24 V minimum for t = 250 s minimum.
38、4.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1 . b. Inductance . L = (2*EAS/(ID1)2)*(VBR-VDD)/VBR) mH minimum. c. Gate to source resistor . RGS: 25 RGS 200 . d. Supply voltage . VDD= -25 V dc, except VDD= -50 V dc for 2N7426U. e. Initial case temperature TC= +25C, -5C, +10C. f.
39、Gate voltage VGS= -12 V dc. g. Number of pulses to be applied . 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate)
40、. Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table
41、I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgro
42、up 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles B3 2077 SEM B4 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on c
43、ycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hou
44、rs minimum. B5 2037 Bond strength, test condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/655E 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles
45、. B3 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup
46、 testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C5 3161 See 4.3.3, RJC(max)= 0.42C/W C6 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-
47、air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordan
48、ce with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19
