DLA MIL-PRF-19500 658 VALID NOTICE 2-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor P-Channel Silicon Type 2N7438 and 2N.pdf

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1、PERFORMANCE SPECIFICATIONSemiconductor Device, Field Effect Radiation Hardened (TotalDose and Single Event Effects) Transistor, P-Channel SiliconType 2N7438, and 2N7439 JANSD and JANSRMIL-PRF-19500/658, dated 13 March 2003, has been reviewed anddetermined to be valid for use in acquisition.NOTICE OF

2、VALIDATIONINCH-POUNDMIL-PRF-19500/658NOTICE 215 July 2011NOTE: The activities above were interested in this document asof the date of this document. Since organizations andresponsibilities can change, you should verify the currency ofthe information above using the ASSIST Online database athttps:/assist.daps.dla.mil.AMSC N/A FSC 5961Custodians:Army - CRNavy - ECAir Force - 85Other - NAPreparing Activity:DLA - CCProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

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