1、 MIL-PRF-19500/682B 1 March 2013 SUPERSEDING MIL-PRF-19500/682A 16 March 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNT, TYPE 1N6845U3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agenc
2、ies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, schottky power rectifier. Four levels of product assuranc
3、e are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, surface mount U3. * 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Types VRWMIO(1) TC = +100C IFSMtp= 8.3 ms TC= +25C TSTGand TJV dc A dc A (pk) C 1N6845U3 45
4、 30 300 -65 to +150 (1) Derate linearly at 400 mA/C from TJ= TC= +125C to + 150C. See figure 2. 1.4 Primary electrical characteristics. RJC= 2.0C/W maximum, CJ at 10 V dc = 800 pF. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and
5、 Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion
6、 measures necessary to comply with this revision shall be completed by 1 June 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In
7、accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. Ltr Dimensions Note Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .108 .122 2.74 3.12 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS
8、1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 U3 2, 3 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents list
9、ed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, doc
10、ument users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks f
11、orm a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD
12、S MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of prece
13、dence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption
14、 has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activi
15、ty for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface a
16、nd physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 El
17、ectrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein. 3.7 Marking. Marki
18、ng shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or n
19、etworking permitted without license from IHS-,-,-MIL-PRF-19500/682B 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table
20、s I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior re
21、vision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTXV, a
22、nd JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of MIL-PRF-19500) Meas
23、urement JANS level JANTX and JANTXV levels (1) (2) 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein (2) 3c Thermal impedance (see 4.3.2) Therm
24、al impedance (see 4.3.2) 3d Avalanche energy test (see 4.3.3) Avalanche energy test (see 4.3.3) 4, 5, 8 Required Required 9, 10 Not applicable Not applicable 11 VF1and IR1VF1and IR112 See 4.3.1 240 hours See 4.3.1 48 hours 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF2= 50 mV (pk); IR1= 100
25、 percent from the initial value or 50 uA, whichever is greater Subgroup 2, of table I herein; VF1and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 50 uA, whichever is greater (1) Surge shall precede thermal impedance. (2) Shall be performed anytime after temperature cycling, scree
26、n 3a. JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test condition A, VR= 36 V dc; TJ= +125C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be
27、performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup 4 herein. 4.3.3 Avalanche energy test. The avalanche energy test is to be performed with method 40
28、64 of MIL-STD-750, using the circuit as shown on figure 3 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1 A, VRWM= 45 V minimum, L = 150 H. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
29、HS-,-,-MIL-PRF-19500/682B 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta
30、requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows
31、. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method C
32、ondition B4 1037 TJ= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1000 hours on each JANS wafer lot. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subg
33、roup Method Condition B3 1037 TJ= +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
34、 table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Not applicable. C5 4081 Limit for thermal resistance for
35、 1N6845U3 is 2.0C/W. C6 1037 TJ= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 1,000 hours minimum (required for TX, TXV only) (heat sinking allowed) . 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditio
36、ns specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein except ZJX need not be performed after group E subgroup 2. 4.5 Methods of inspection. Methods of inspection shall be as
37、specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 6 * TABLE I. Group A insp
38、ection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJXC/W Forward voltage 4011 IF= 10 A (pk), pulsed test (see 4.5.1) VF1.65 V dc Forward voltage 4011 IF= 20 A (pk), pulsed test
39、(see 4.5.1) VF2.72 V dc Forward voltage 4011 IF= 40 A (pk), pulsed test (see 4.5.1) VF3.86 V dc Reverse current 4016 VR= 45 V, DC method, pulsed test (see 4.5.1) IR1100 A dc Subgroup 3 High temperature operation: TC= +100C Forward voltage IF= 10 A (pk), pulsed test (see 4.5.1) VF4.55 V dc Forward vo
40、ltage IF= 20 A (pk), pulsed test (see 4.5.1) VF5.67 V dc Reverse current 4016 VR= 45 V, DC method, pulsed test (see 4.5.1) IR210.0 mA dc Low temperature operation: TC= -55C VF6Forward voltage 4011 IF= 10 A (pk), pulsed test (see 4.5.1) .78 V dc Subgroup 4 Capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG
41、= 50 mV (p-p) CJ800 pF Subgroup 5 Not applicable See footnotes at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 7 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Cond
42、itions Min Max Subgroup 6 Surge 4066 See 1.3, column 4 herein, ten surges each diode, 60 seconds between surges, (see 4.5.1) IFSMElectrical measurements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A
43、 Scope display evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 8 * TABLE II. Groups B, C, and E delta requi
44、rements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 VF21N6845U3 IF= 20 A (pk), pulsed (see 4.5.1) 50 mV dc from initial reading. 2. Reverse current 4016 VR= 45 V dc IR150A or 100 pecent from initial reading, whichever is greater
45、. 3. Thermal impedance 4081 See 4.3.2 ZJXC/W 1/ Each individual diode. 2/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 3/ The delta measurements for table E-VIB
46、 (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, and 3. b. Subgroup 3, see table II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 4/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows: a. Sub
47、groups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels. b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels. 5/ Devices which exceed the table I limits for this test shall not be accepted. 6/ The delta measurements for table E-IX of MIL-PRF-19500 are as follows: a. Su
48、bgroup 1, see table II herein, steps 1, 2, and 3. b. Subgroup 2, see table II herein, steps 1 and 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/682B 9 * TABLE III. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-750 Qualification Method Conditions Subgroup 1 n = 45, c = 0 Temperature cycling (air to air) Hermetic seal 1051 1071 Test condition G, 500 cycles, -55C to +150C. Electrical measurements See table I, subgroup 2 and table II herein. Subgroup 2 Life test 1048 t
