1、 MIL-PRF-19500/732B 23 April 2010 SUPERSEDING MIL-PRF-19500/732A 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N752
2、0T3, JANTXVR, F AND JANSR, F This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the
3、 performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximu
4、m avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, TO-257AA (T3) and figure 2, SMD.5 TO-276AA (U3 or with ceramic lid, U3C). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) T
5、C= +25C ID2(3) (4) TC= +100C ISIDM(5) TJand TSTG2N7519U3, 2N7519U3C 2N7520U3, 2N7520U3C 2N7519T3 2N7520T3 W 75 75 75 75 W 1.56 1.56 1.56 1.56 C/W 1.67 1.67 1.67 1.67 V dc -30 -60 -30 -60 V dc -30 -60 -30 -60 V dc 20 20 20 20 A dc -22 -21 -20 -20 A dc -18 -13.3 -18 -13 A dc -22 -21 -20 -20 A(pk) -88
6、-84 -80 -80 C -55 to +150 (1) Derate linearly 0.6 W/C for TC +25C. (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDspecs. IDis limited by package and device construction to 20 A for TO-257AA and to 22 A for TO-276AA: (4) See figure 4, maximum d
7、rain current graph. (5) IDM= 4 X ID1as defined in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or ema
8、iled to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be
9、completed by 23 July 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4. This area is fo
10、r the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-257AA (2N7519T3 and 2N7520T3). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .4
11、30 10.41 10.92 BL1.033 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .600 .650 15.24 16.51 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Ga
12、te Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 3 Dimensions Ltr. Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.64 CH (for U3) .124 3.15 CH (for U3C) .134 3.40 LH .010 .020 0.25 0.51 LW1 .281 .2
13、91 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC Q1 .030 0.762 Q2 .030 0.762 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accorda
14、nce with ASME Y14.5M, diameters are equivalent to x symbology. 4. Terminal 1 - Drain, Terminal 2 - Gate, Terminal 3 Source. * FIGURE 2. Physical dimensions for SMD.5 TO-276AA (2N7519U3, 2N7519U3C, 2N7520U3, and 2N7520U3C). * * * Provided by IHSNot for ResaleNo reproduction or networking permitted wi
15、thout license from IHS-,-,-MIL-PRF-19500/732B 4 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)1VDS VGSID = 1.0 Max IDSS1VGS= 0 VDS= 80 Max rDS(on)(1) VGS= 12 V dc EAS at ID1IAS ID= 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc V dc A dc
16、 ohm ohm mJ A Min Max 2N7519U3, 2N7519U3C 2N7520U3, 2N7520U3C 2N7519T3 2N7520T3 -30 -60 -30 -60 -2.0 -2.0 -2.0 -2.0 -4.0 -4.0 -4.0 -4.0 -10 -10 -10 -10 0.070 0.085 0.072 0.087 0.091 0.170 0.094 0.180 152 110 200 134 -22 -21 -20 -20 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The doc
17、uments listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of thi
18、s list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and
19、handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFEN
20、SE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094
21、.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
22、 a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualificati
23、on. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbrev
24、iations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 (T3, TO-257AA) and 2 (U3 and U3C, surface mount TO-276AA) herein. 3.4.1 Lead fini
25、sh. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted to meet the requirement
26、s of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices shall be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the followin
27、g handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic,
28、rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate shall be terminated to source, R 100 k, whenever bias voltage is to be applied drai
29、n to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. M
30、arking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from oth
31、er defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as fo
32、llows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection sha
33、ll be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be perform
34、ed on the first inspection lot of this revision to maintain qualification. 4.2.2 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. See the design safe operation area figures herein. Electrical measurements
35、(end-points) shall be in accordance with table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 7 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as spec
36、ified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTXV level (3) Gate stress test (see 4.3.1) Gate stress test (
37、see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) (1) 9 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1 Not applicable 10
38、Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is
39、greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)112 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc o
40、r 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. Subgroups 2 and 3 of table
41、 I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial valu
42、e. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requireme
43、nts. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 8 4.3.1 Gate stress test. Apply VGS= -24 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) IAS(max). b. Peak gate voltage (VGS) 12
44、 V. c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance (L) . .minimum mH V)V- V()I(2EBRDDBR2D1AS f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . 25 V. 4.3.3 Thermal impedance. The thermal impedance measurements sha
45、ll be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall b
46、e in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B insp
47、ection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reprodu
48、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/732B 9 * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Inspection B3 1051 Test condition G, 100 cycles. B3 2077 Scanning electron microscope (SEM) qualification may be performed anytime prior to lot formation. B4 1042 Condition D, 2,000 cycles. No heat sink nor forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Test condition B, VGS= rated TA= +175C, t = 24 hours. B5 1042 Test condition A, VDS= rated;
