1、 MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiri
2、ng the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each device type as
3、 specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, TO-257AA (T3). 1.3 Maximum ratings. (Unless otherwise specified, TA= +25C). Type (1) PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC= +25CID2TC= +100C ISIDM(5) TJand TSTG2N7505T3 W 75 W 1.56 C/W 1.67 V dc -100 V dc -100 V dc
4、 20 A dc 18 A dc 11 A dc 18 A(pk) 72 C -55 to +150 (1) Derate linearly by 0.6 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited to 18 A (by package and internal wires and may be limited by pin diameter): (4) S
5、ee figure 3, maximum drain current graph. (5) IDM= 4 X ID1; ID1as calculated by footnote (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed t
6、o Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. ()( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted
7、without license from IHS-,-,-MIL-PRF-19500/748 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)VDS VGSID= -0.25 Max IDSS1VGS= 0 VDS= 100 Max rDS(ON)(1) VGS= -10 V dc EAS at IASIAS ID= -0.25 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc V dc
8、 A dc ohm ohm mJ A Min Max 2N7505T3 -100 -2.0 -4.0 -25 0.117 0.234 256 -11 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of
9、this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether
10、or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solic
11、itation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/
12、or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cit
13、ed herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/748 3 NO
14、TES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). 5. In accordance with ASME Y14.5M, diameters are equ
15、ivalent to x symbology. FIGURE 1. Physical dimensions for TO-257AA (2N7505T3). Inches Millimeters Ltr Min Max Min Max BL .410 .430 10.41 10.92 BL1.033 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .600 .650 15.24 16.51 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .52
16、7 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Gate T3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/748 4 3. REQUIREMENTS 3.1 General. The individual item
17、 requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
18、before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS- rated avalanche current, nonrepetitive. nC - nano coulomb. 3.4 Interface and physical dimensions. Inte
19、rface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-257AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition do
20、cument (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to
21、the accumulation of static charge. However, the following handling practices are recommended (see 3.6). a. Devices should be handled on benches with conductive and grounded surface. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devic
22、es in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated t
23、o source. R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requir
24、ements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance.Provided by IHSNot for ResaleNo reproduction or networking permitt
25、ed without license from IHS-,-,-MIL-PRF-19500/748 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualifica
26、tion inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualifi
27、cation was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed by the first inspection lot of this revision to maintain qualification. Pr
28、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/748 6 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made
29、in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) (4) Method 3470 of MIL-STD-75
30、0 (see 4.3.2) optional Method 3470 of MIL-STD-750 (see 4.3.2) optional (3) 3c Method 3161 of MIL-STD-750 (see 4.3.3) Method 3161 of MIL-STD-750 (see 4.3.3) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750,
31、 test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1, IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is gr
32、eater. Subgroup 2 of table I herein, IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)112 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc o
33、r 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is great
34、er. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1IGSSR1, and IDSS1are measured. (2)
35、 An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. (4) Method 3470 of MIL-STD-750 is optional if performed as a sample in group
36、 A, subgroup 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/748 7 4.3.1 Gate stress test. Apply VGS= +24 V minimum for t = 250 s minimum. 4.3.2 Single pulsed unclamped inductive switching. a. Peak current, ID.IAS(max). b. Peak gate
37、voltage, VGS-10 V, up to maximum rated VGS. c. Gate to source resistor, RGS.25 Rg 200 . d. Initial case temperature .+25C, +10C, -5C. e. Inductance, L . .minimum mH V)V- V()I(2EBRDDBR2D1AS f. Number of pulses to be applied .1 pulse. g. Supply voltage (VDD) . - 25 V. 4.3.3 Thermal impedance. The ther
38、mal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. C
39、onformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-po
40、ints) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and as follows.
41、Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B4 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 mi
42、nute minimum. No heat sink nor forced air cooling on the device shall be permitted during the “on“ cycle. B5 1042 A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test condition A, VDS= rated, TA= +175C, t = 120 hours, read and record VBR(DSS)(pre and post) at ID
43、= -1 mA. Read and record IDSS(pre and post). B5 1042 Accelerated steady-state gate stress; test condition B, VGS= rated, TA= +175C, t = 24 hours. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/748 8 4.4.2.2 Gr
44、oup B inspection table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B2 1051 Test condition G. B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the “on“ cycle. 4.4.
45、3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.3.1 Group C
46、 inspection (table E-VII of MIL-PRF-19500). Subgroup Method Conditions C2 2036 Test condition E. C5 3161 RJC= 1.67 C/W maximum. See 4.5.2. C6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during
47、the “on“ cycle. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 he
48、rein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. The thermal resistance measurements shall be
49、performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table E-VII of MIL-PRF-19500, group E, subgroup 4. Provided by IHSNot for ResaleNo reproduction or networking pe
