1、 MIL-PRF-19500/750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acqui
2、ring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each device type
3、as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, SMD-0.5, TO-276AA (U3). 1.3 Maximum ratings. (Unless otherwise specified, TA= +25C). Type (1) PT(1) TC= +25C PTTA= +25C (free air) RJC(2) VDSVDGVGSID1(3) (4)TC= +25CID2TC= +100C ISIDM(5) TJand TSTG2N7507U3 W 75 W 1.56 C/W 1.67 V d
4、c 150 V dc 150 V dc 20 A dc 20 A dc 12 A dc 20 A(pk) 80 C -55 to +150 (1) Derate linearly by 0.6 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited to 22 A by package and internal wires and may be limited by pi
5、n diameter: (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1; ID1as calculated by footnote (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3
6、990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. ()( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or netw
7、orking permitted without license from IHS-,-,-MIL-PRF-19500/750 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)VDS VGSID = 0.25 Max IDSS1VGS= 0 VDS= 100 Max rDS(ON)(1) VGS= 10 V dc EAS at IASIAS ID= 0.25 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C
8、at ID2V dc V dc A dc ohm ohm mJ A Min Max 2N7507U3 150 2.0 4.0 25 0.080 0.192 165 12 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other se
9、ctions of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification
10、, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
11、 the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/qui
12、cksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the refe
13、rences cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1950
14、0/750 3 Dimensions Ltr. Inches Millimeters Min Max Min Max BL .395 .405 10.04 10.28 BW 291 .301 7.40 7.64 CH .1085 .123 2.76 3.12 LH .010 .020 0.25 0.51 LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC Q1 .030
15、 0.762 Q2 .030 0.762 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Terminal 1 - Drain, Terminal 2 - Gate, Terminal 3 - Source. FIGURE 1.
16、Physical dimensions for SMD-0.5, TO-276AA (2N7507U3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/750 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2
17、 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definit
18、ions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS- Rated avalanche current, nonrepetitive. nC - nano coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on fig
19、ure 1, SMD-0.5 (TO-276AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-
20、PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling prac
21、tices are recommended (see 3.6). a. Devices should be handled on benches with conductive and grounded surface. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or
22、silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to sour
23、ce. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor
24、 devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/750 5 4. VERIFICATION 4.1
25、 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with M
26、IL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that
27、did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed by the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted with
28、out license from IHS-,-,-MIL-PRF-19500/750 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of t
29、able I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) (4) Method 3470 of MIL-STD-750 (see 4.3.2) optional Method 3470 of MIL-STD-750 (see 4.3.2) optional
30、 (3) 3c Method 3161 of MIL-STD-750 (see 4.3.3) Method 3161 of MIL-STD-750 (see 4.3.3) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDS
31、S1, rDS(on)1,VGS(TH)1, IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein, IGSSF1, IGSSR1, IDSS1, rDS(on)1,V
32、GS(TH)112 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc o
33、r 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is gre
34、ater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and V
35、GS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. (4) Method 3470 is optional if performed as a sample in group A, subgroup 5. Provided by IHSNot for ResaleNo reproduction or networking permitted
36、without license from IHS-,-,-MIL-PRF-19500/750 7 4.3.1 Gate stress test. Apply VGS= +24 V minimum for t = 250 s minimum. 4.3.2 Single pulsed unclamped inductive switching. a. Peak current, ID.IAS(max). b. Peak gate voltage, VGS10 V, up to maximum rated VGS c. Gate to source resistor, RGS.25 Rg 200 .
37、 d. Initial case temperature .+25C, +10C, -5C. e. Inductance, L . .minimum mH V)V- V()I(2EBRDDBR2D1AS f. Number of pulses to be applied .1 pulse. g. Supply voltage (VDD) 50 V. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750
38、 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed
39、for conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2 Grou
40、p B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I
41、, subgroup 2 herein. 4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B4 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during t
42、he “on“ cycle. B5 1042 A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test condition A, VDS= rated, TA= +175C, t = 120 hours, read and record VBR(DSS)(pre and post) at ID= -1 mA. Read and record IDSS(pre and post). B5 1042 Accelerated steady-state gate stress;
43、test condition B, VGS= rated, TA= +175C, t = 24 hours. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/750 8 4.4.2.2 Group B inspection table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition
44、s B2 1051 Test condition G. B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the “on“ cycle. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditio
45、ns specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.3.1 Group C inspection (table E-VII of MIL-PRF-19500). Subgroup Method Conditions C2 2036 Not applicab
46、le. C5 3161 RJC= 1.67 C/W maximum, see 4.5.2. C6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the “on“ cycle. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance
47、 with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropria
48、te tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. The thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table E-IX of MIL-PRF-19500, group E, subgroup 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/750 9 TABLE
