DLA MIL-PRF-3098 123 D-2009 CRYSTAL UNIT QUARTZ CR142 U.pdf

上传人:花仙子 文档编号:692818 上传时间:2018-12-30 格式:PDF 页数:4 大小:41.08KB
下载 相关 举报
DLA MIL-PRF-3098 123 D-2009 CRYSTAL UNIT QUARTZ CR142 U.pdf_第1页
第1页 / 共4页
DLA MIL-PRF-3098 123 D-2009 CRYSTAL UNIT QUARTZ CR142 U.pdf_第2页
第2页 / 共4页
DLA MIL-PRF-3098 123 D-2009 CRYSTAL UNIT QUARTZ CR142 U.pdf_第3页
第3页 / 共4页
DLA MIL-PRF-3098 123 D-2009 CRYSTAL UNIT QUARTZ CR142 U.pdf_第4页
第4页 / 共4页
亲,该文档总共4页,全部预览完了,如果喜欢就下载吧!
资源描述

1、 AMSC N/A FSC 5955 INCH-POUND MIL-PRF-3098/123D 7 August 2009 SUPERSEDING MIL-PRF-3098/123C 17 May 2004 PERFORMANCE SPECIFICATION SHEET CRYSTAL UNIT, QUARTZ, CR142/U This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring th

2、e product described herein shall consist of this specification sheet and MIL-PRF-3098. Pertinent characteristics: 833.333 kHz; fundamental mode; controlled; antiresonance. FIGURE 1. Crystal unit - CR142/U. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

3、,-,-MIL-PRF-3098/123D 2 Ltr Inches mm Min Max Min Max A - .352 - 8.94 B - .725 - 18.42 C .223 .248 5.66 6.30 D .030 .037 0.76 0.94 E .460 .476 11.68 12.09 F - .757 - 19.23 G .030 .040 0.76 1.02 H .015 .025 0.38 0.64 J - .775 - 19.68 K - .317 - 8.05 L .015 .025 0.38 0.64 M .075 .141 1.90 3.58 N .048

4、.052 1.22 1.32 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Marking to be in accordance with MIL-PRF-3098. FIGURE 1. Crystal unit - CR142/U - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

5、HS-,-,-MIL-PRF-3098/123D 3 REQUIREMENTS: Dimensions, marking, and configuration: See figure 1. Frequency: 833.333 kHz. Capacitance, shunt: 7.0 pF, maximum. Mode of oscillation: Fundamental. Rated drive level: 1.0 mW, maximum. Calibration values: Equivalent-resistance: Zero ohms. Crystal current: Set

6、 crystal current control at extreme counterclockwise, minimum. Antiresonance, load capacitance: 32.0 pF 0.2 pF. Reference temperature: 75C 1C. Operating temperature range (controlled): +70C to +80C, inclusive. Frequency tolerance: 0.001 percent. Equivalent resistance: 275 ohms, maximum. Frequency st

7、ability: 0.0005 percent. Operable temperature range: -55C to +70C and +80C to +90C, inclusive. Shock: Frequency change permitted: 0.0005 percent. Equivalent resistance: 15 percent. Vibration: Method 201, MIL-STD-202. Frequency change permitted: 0.0005 percent. Equivalent resistance change permitted:

8、 15 percent. Temperature cycling: Frequency change permitted: 10 Hz. Equivalent resistance change permitted: 20 percent. Aging: Frequency change permitted: 0.0005 percent. Reference documents. In addition to MIL-PRF-3098, this document references the following: MIL-STD-202 The margins of this specif

9、ication are marked with vertical lines to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of th

10、is document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-3098/123D 4 Custodians: Preparing activity: Army - CR DLA - CC Navy -

11、EC Air Force - 99 (Project 5955-2009-038) DLA - CC Review activities: Air Force - 19, 84 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at http:/assist.daps.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

展开阅读全文
相关资源
猜你喜欢
  • BS IEC 60747-14-4-2011 Semiconductor devices Discrete devices Semiconductor accelerometers《半导体器件 分立器件 半导体加速器》.pdf BS IEC 60747-14-4-2011 Semiconductor devices Discrete devices Semiconductor accelerometers《半导体器件 分立器件 半导体加速器》.pdf
  • BS IEC 60747-14-5-2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor《半导体器件 半导体传感器 PN-结点半导体温度传感器》.pdf BS IEC 60747-14-5-2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor《半导体器件 半导体传感器 PN-结点半导体温度传感器》.pdf
  • BS IEC 60747-16-2-2001 Semiconductor devices - Microwave integrated circuits - Frequency prescalers《半导体装置 微波集成电路 频率预定标器》.pdf BS IEC 60747-16-2-2001 Semiconductor devices - Microwave integrated circuits - Frequency prescalers《半导体装置 微波集成电路 频率预定标器》.pdf
  • BS IEC 60747-4-2008 Semiconductor devices - Discrete devices - Microwave diodes and transistors《半导体装置 分立装置 微波二极管和晶体管》.pdf BS IEC 60747-4-2008 Semiconductor devices - Discrete devices - Microwave diodes and transistors《半导体装置 分立装置 微波二极管和晶体管》.pdf
  • BS IEC 60747-5-4-2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers《半导体器件 分立器件 光电器件 半导体激光器》.pdf BS IEC 60747-5-4-2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers《半导体器件 分立器件 光电器件 半导体激光器》.pdf
  • BS IEC 60747-6-2016 Semiconductor devices Discrete devices Thyristors《半导体器件 分立器件 半导体闸流管》.pdf BS IEC 60747-6-2016 Semiconductor devices Discrete devices Thyristors《半导体器件 分立器件 半导体闸流管》.pdf
  • BS IEC 60747-8-4-2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications《半导体分立器件 电力开关设备的金属氧化物半导体场效应晶体管》.pdf BS IEC 60747-8-4-2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications《半导体分立器件 电力开关设备的金属氧化物半导体场效应晶体管》.pdf
  • BS IEC 60747-9-2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)《半导体装置 分立器件 绝缘栅双极晶体管(IGBTs)》.pdf BS IEC 60747-9-2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)《半导体装置 分立器件 绝缘栅双极晶体管(IGBTs)》.pdf
  • BS IEC 60748-1-2002 Semiconductor devices - Integrated circuits - General《半导体器件 集成电路 总则》.pdf BS IEC 60748-1-2002 Semiconductor devices - Integrated circuits - General《半导体器件 集成电路 总则》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1