1、INCHPOUND MILSTD750F w/CHANGE 1 29 April 2013 SUPERSEDING MILSTD750F 3 January 2012 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES AMSC N/A FSC 5961 The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 Ju
2、ne 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 ii FOREWORD 1. This test method standard is approved for use by all Departments and Agencies of the Department of Defense. 2. This issue of MILSTD750 series establishes un
3、iform test methods for testing the environmental, physical, and electrical characteristics semiconductor devices. 3. This entire test method standard has been revised. This revision has been issued in six parts; the basic test method standard (this document) and five numbered parts. This was done in
4、 order to provide flexibility in the use and the updating of the test methods. The six parts are listed as follows: MILSTD750 Test Methods For Semiconductor Devices. MILSTD7501 Environmental Test Methods For Semiconductor Devices. MILSTD7502 Mechanical Test Methods For Semiconductor Devices. MILSTD7
5、503 Electrical Characteristics Tests for Bipolar, MOSFET, and Gallium Arsenide Transistors. MILSTD7504 Electrical Characteristics Tests for Diodes, Microwave Diodes, Thyristors, and Tunnel Diodes. MILSTD7505 High Reliability Space Application Test Methods For Semiconductor Devices. 4. Comments, sugg
6、estions, or questions on this document should be addressed to: Commander, Defense Logistics Agency, DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address i
7、nformation using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 iii SUMMARY OF CHANGE 1 MODIFICATIONS 1. Paragraph 4.1.3 has been added to define acceptable international sin
8、usoidal pulse input wave frequency. Paragraph Modification 4.1.3 New Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 iv CONTENTS PARAGRAPH PAGE FOREWORD.ii SUMMARY OF CHANGE 1 MODIFICATIONS . iii 1. SCOPE . 1 1.1 Purpose . 1 1.2
9、 Numbering system 1 1.2.1 Classification of tests . 1 1.2.2 Test method revisions . 1 1.3 Methods of reference 1 2. APPLICABLE DOCUMENTS 2 2.1 General . 2 2.2 Government documents 2 2.2.1 Specifications, standards, and handbooks 2 2.3 Non-Government publications . 3 2.4 Order of precedence . 3 3. DE
10、FINITIONS . 3 3.1 Acronyms, symbols, and definitions 3 3.1.1 Acronyms used in this standard . 3 4. GENERAL REQUIREMENTS . 5 4.1 Test conditions 5 4.1.1 Permissible temperature variation in environmental chambers . 5 4.1.2 Electrical test frequency 5 4.1.3 Sinusoidal pulse testing . 5 4.1.4 Accuracy
11、5 4.1.4.1 Control based on uncertainty . 6 4.1.4.2 Test methods and circuits 6 4.1.5 Calibration requirements . 7 4.2 Orientations . 7 4.3 General precautions 9 4.3.1 Transients 9 4.3.2 Test conditions for electrical measurements . 9 4.3.2.1 Thermal resistance measurements (test method series 3100)
12、9 4.3.2.2 Low frequency tests (test method series 3200) . 9 4.3.2.3 High frequency tests (test method series 3300) . 9 4.3.2.4 Electrical characteristics tests for MOS field effect transistors (3400 series) . 9 4.3.2.5 Steady-state dc measurements (test method series 4000) 9 4.3.2.6 Pulse measuremen
13、ts (test method series 4000) 9 4.3.2.7 Electrical characteristics tests for microwave diodes (test method series 4100) 10 4.3.3 Test circuits . 10 4.3.3.1 Test method variation 10 4.3.4 Soldering . 10 4.3.5 Order of connection of leads . 10 4.3.6 Radiation precautions 10 4.3.7 Handling precautions .
14、 11 4.3.7.1 UHF and microwave devices . 11 4.3.7.2 Electrostatic discharge sensitive devices . 11 4.4 Continuity verification of burn-in and life tests . 11 4.4.1 Bias interruption 11 4.5 Requirements for high temperature reverse bias (HTRB) and burn-in 12 4.6 Bias requirements . 12 4.7 Destructive
15、tests 13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 v CONTENTS PARAGRAPH PAGE 4.8 Nondestructive tests 14 4.9 Laboratory suitability . 15 4.10 Recycled, recovered, or environmentally preferable materials 15 5. DETAILED REQU
16、IREMENTS . 15 5.1 Organization 15 5.2 Arrangement and contents 15 5.3 References to MILSTD750 15 6. NOTES . 15 6.1 Intended use . 15 6.2 International standardization agreement . 15 6.3 Subject term (key word) listing 16 6.4 Changes from previous issue 16 FIGURE TITLE PAGE 1. Orientation of noncylin
17、drical semiconductor device to direction of accelerating force8 2. Orientation of cylindrical semiconductor device to direction of accelerating force.8 CONCLUDING MATERIAL.16 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 1 1.
18、SCOPE 1.1 Purpose. This standard establishes uniform methods and procedures for testing semiconductor devices suitable for use within Military and Aerospace electronic systems. The methods and procedures in the various parts of this standard cover basic environmental, physical, and electrical tests
19、to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations. For the purpose of this standard, the term “devices“ includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This s
20、tandard is intended to apply only to semiconductor devices. The test methods and procedures described in the various parts of this multipart test method standard have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equiva
21、lent to the actual service conditions existing in the field and to obtain reproducibility of the results of tests. The test methods described by this standard are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location since it is kn
22、own that the only true test for operation in a specific location is an actual service test at that point. b. To describe, in a series of standards, all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications so that these test met
23、hods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general test methods adaptable to a broad range of devices. c. The test methods described by this standard for environmental, phy
24、sical, and electrical testing of semiconductor devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing. 1.2 Numbering system. The test methods are designated by numbers assigned in accordance with the following syst
25、em. 1.2.1 Classification of tests. The test methods are divided into five areas and are contained in five parts of this multipart test method standard. Test methods numbered 1000 to 1999 inclusive, cover environmental tests and are in MILSTD7501. Test methods numbered 2000 to 2999 inclusive, cover m
26、echanical- characteristics tests and are in MILSTD7502. Electrical- characteristics tests are covered in two groups; 3000 to 3999 inclusive, cover test methods for transistors (see MILSTD7503) and 4000 to 4999 inclusive, cover test methods for diodes (see MILSTD7504). Test methods numbered 5000 to 5
27、999 inclusive, are for high reliability space applications and are in MILSTD7505. 1.2.2 Test method revisions. Test method revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, test method 1001.2 is the first revision of test met
28、hod 1001. 1.3 Method of reference. Test methods contained in this multipart test method standard shall be referenced, when applicable, in the individual specification, specification sheet, or procurement documents by specifying the test method number and the details required in the summary of the ap
29、plicable method. The basic standard shall be referenced and not the individual part or parts of this standard (see 5.3). To avoid the necessity for changing documents that refer to this standard, the revision number of a test method should not be used when referencing individual test methods. For ex
30、ample, use 1001 as a reference versus 1001.2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this standard. Thi
31、s section does not include documents cited in other sections of this multipart standard or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements docu
32、ments cited in sections 3, 4, or 5 of this standard, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specifie
33、d, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD7501 Environmental Test Methods For Semiconductor Devices. MILSTD7502 Mechanical
34、Test Methods For Semiconductor Devices. MILSTD7503 Electrical Characteristics Test Methods for Bipolar, MOSFET, and Gallium Arsenide Transistor Semiconductor Devices. MILSTD7504 Electrical Characteristics Test Methods for Diodes, Microwave Diodes, Thyristors, and Tunnel Diode Semiconductor Devices.
35、MILSTD7505 High Reliability Space Application Test Methods For Semiconductor Devices. MILSTD1686 Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices). DEPARTMENT OF DEFENSE HANDBOOKS M
36、ILHDBK263 Electrostatic Discharge Control Handbook for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices)(Metric). (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil o
37、r from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 3 2.3 Non-Government publications. The following documents form a par
38、t of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASME INTERNATIONAL (ASME) ASME Y14.38 Abbreviations and Acronyms for Use on Drawings and Related Documents. (Copies of these documents are ava
39、ilable online at http:/www.asme.org or from ASME International, Three Park Avenue, New York, NY 100165990.) NCSL INTERNATIONAL (NCSL) NCSL Z540.3 Requirements for the Calibration of Measuring and Test Equipment. (Copies of this document are available online at http:/www.ncsli.org or can be obtained
40、through NCSL International, 2995 Wilderness Place, Suite 107, Boulder, CO 803015404.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except for related applicable specification s
41、heet, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. DEFINITIONS 3.1 Acronyms, symbols, and definitions. For the purposes of this standard, the acronyms, symbols, and definiti
42、ons specified in MILPRF19500, ASME Y14.38, and herein shall apply. 3.1.1 Acronyms used in this standard. Acronyms used in this standard are defined as follows: a. BIST Backward instability shock test. b CFM Cubic feet per minute. c. DUT Device under test. d. ESD Electrostatic discharge. e. ESDS Elec
43、trostatic discharge sensitivity. f. FET Field-effect transistor. g. FIST Forward instability shock test. h. GaAs Gallium Arsenide. i. HTRB High temperature reverse bias. j. Hz Hertz. k. ICBO Collector to base cutoff current. l. IGBT Insulated gate bipolar transistor. m. LCC Leadless chip carrier. Pr
44、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD750F w/CHANGE 1 4 n. mH Microhenries. o. MOS Metal oxide semiconductor. p. MOSFET Metal oxide semiconductor field-effect transistor. q. NIST National Institute of Standards and Technology. r. NPN Th
45、e doping regions of a particular type of bipolar junction transistor. s. ns Nanosecond. t. pF Picofarad. u. PIND Particle impact noise detection. v. PNP The doping regions of a particular type of bipolar junction transistor. w. RH Relative humidity. x. SEM Scanning electron microscope. y. SOA Safe o
46、perating area. z. TSP Temperature sensitive parameter. aa. UHF Ultra high frequency. bb. VCB Forward voltage drop of the collector. cc. VEB Voltage drop of the emitter to base. dd. VSWR Voltage standing wave ratio. Provided by IHSNot for ResaleNo reproduction or networking permitted without license
47、from IHS-,-,-MILSTD750F w/CHANGE 1 5 4. GENERAL REQUIREMENTS 4.1 Test conditions. Unless otherwise specified herein or in the individual specification sheet, all measurements and tests shall be made at thermal equilibrium at an ambient temperature of 25C 3C and at ambient atmospheric pressure and re
48、lative humidity and the specified test condition C (at environmentally elevated and reduced temperatures shall have a tolerance of 3 percent, or +3C, whichever is greater). Whenever these conditions must be closely controlled in order to obtain reproducible results, the referee conditions shall be as follows: Temperature 25C 1C; relative humidity 50 5 percent; and a
