1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device type 02. Updated paragraph 4.3.5 to include RADHARD requirements. 01-10-26 Raymond Monnin B Add paragraph 1.5 and note 2. Table I, add note for enhanced low dose rate effects. Paragraph 4.3.5.a, correct paragraph to add component tes
2、ted dose rate. -sld 06-11-21 Raymond Monnin C Update Table I to include radiation level “L” for device type 02. Update table in paragraph 4.3.5 to include RHA level “L”. Add paragraph 3.2.3 for Radiation exposure circuit. 07-01-29 Joseph Rodenbeck D Added radiation hardened level P. -sld 07-06-04 Ro
3、bert M. Heber REV SHEET REV SHEET REV STATUS REV D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Gary Zahn DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWI
4、NG IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-10-16 MICROCIRCUIT, HYBRID, LINEAR, 3.3-VOLT, SINGLE CHANNEL, DC-DC CONVERTER AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-01501 SHEET 1 OF 13 DSCC FORM 2
5、233 APR 97 5962-E438-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This d
6、rawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in
7、 the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 01501 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardn
8、ess assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic
9、number Circuit function 01 MTR283R3S/883, MTR283R3SF/883 DC-DC converter, 20 W, +3.3 V output 02 SMTR283R3S, SMTR283R3SF DC-DC converter, 18 W, +3.3 V output 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are d
10、efined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is inten
11、ded for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Ins
12、pections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) t
13、aken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality l
14、evel is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01501 DEFENSE SUPPLY CENTER COLUMBUS COLUM
15、BUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 10 Dual-in-line Z See figure 1 10 Flange mount 1.2.5 Lead fini
16、sh. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input voltage range -0.5 V dc to +50 V dc Power dissipation (PD): Device types 01 and 02 (non-RHA) 12 W Device type 02 (RHA levels L and R) . 14 W Output power: Device type 01 (non-RHA) 20.6 W Device type 02
17、 (non-RHA) 18.5 W Device type 02 (RHA levels L and R) . 19.1 W Lead temperature (hand soldering, 10 seconds) +300C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Input voltage range +16 V dc to +40 V dc Case operating temperature range (TC) -55C to +125C 1.5 Radiation
18、features. Maximum total dose available (dose rate = 9 rad(Si)/s): Device type 02 (RHA levels L and R). 100 krad (Si) 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent spec
19、ified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircu
20、its. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a
21、space enviroment and may demonstrate enhanced low dose rate effects. Radiation end-point limits for the the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rad(Si)/s.Provided by IHSNot for ResaleNo reproduction or networking
22、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standar
23、d Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a c
24、onflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item
25、 performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable devi
26、ce class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of th
27、e device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Te
28、rminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon requ
29、est. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be
30、the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PI
31、N may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type li
32、sted herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Cer
33、tificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein.
34、 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modif
35、ied in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-0
36、1501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc 0.5V no external sync, CL=0 unless otherwise specified Group A subgroups Device
37、types Min Max Unit 1 3.267 3.333 IOUT= Max 2,3 01, 02 3.201 3.399 Output voltage VOUTP, L, R 1, 2, 3 02 3.102 3.498 VDC 01 0.0 6060 Output current IOUTVIN= 16 V dc to 40V dc 1, 2, 3 02 0.0 5450 mA 1 40 IOUT= Max, BW = 10KHz to 2MHz 2,3 01, 02 50 VOUT ripple voltage VRIPP, L, R 1, 2, 3 02 100 mVp-p V
38、IN= 16V dc to 40V dc, IOUT= 6.06 A 01 10 VIN= 16V dc to 40V dc, IOUT= 5.45 A 1, 2, 3 02 20 VOUTline regulation VRLINEP, L, R 1, 2, 3 02 40 mV IOUT = 0 to 6.06 A 01 10 IOUT= 0 to 5.45 A 1, 2, 3 02 20 VOUTload regulation VRLOADP, L, R 1, 2, 3 02 40 mV IOUT= 0 A, Inhibit (pin 2) = 0 1, 2, 3 01, 02 8 P,
39、 L, R 1, 2, 3 02 10 mA IOUT= 0 A, Inhibit (pin 2) = open 1, 2, 3 01, 02 75 Input current IINP, L, R 1, 2, 3 02 175 mA IOUT= Max BW = 10KHz to 10MHz 1, 2, 3 01, 02 50 IINripple current IRIPP, L, R 1, 2, 3 02 65 mAp-p 1 01, 02 10 Short circuit 2, 3 01, 02 12 Short circuit power dissipation PDP, L, R 1
40、, 2, 3 02 14 W See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABL
41、E I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc 0.5V no external sync, CL= 0 unless otherwise specified Group A subgroups Device types Min Max Unit IOUT= 6.06 A 01 74 IOUT= 5.45 A 1 02 70 IOUT= 6.06 A 01 71 IOUT= 5.45 A 2, 3 02 6
42、6 Efficiency Eff P, L, R 1, 2, 3 02 64 % Isolation ISO Input to output or any pin to case (except pins 7 and 8) at 500V dc 1 01, 02 100 M Capacitive Load 3/ 4/ CLNo effect on dc performance 4 01, 02 300 F IOUT= Max 4, 5, 6 01, 02 550 650 Switching frequency FSP, L, R 4, 5, 6 02 400 750 kHz IOUT= Max
43、, TTL level to pin 9 4, 5, 6 01, 02 500 675 External sync range 5/ FSYNCP, L, R 4, 5, 6 02 550 650 kHz 01 -250 +250 50% load to/from 100% load 4, 5, 6 02 -300 +300 VOUT, step load transient 6/ VTLOADP, L, R 4, 5, 6 02 -600 +600 mV pk 50% load to/from 100% load 4, 5, 6 01, 02 200 VOUT, step load tran
44、sient recovery 4/ 6/ 7/ TTLOADP, L, R 4, 5, 6 02 600 s Input step 16V dc to/from 40V dc, IOUT= Max 4, 5, 6 01, 02 -300 +300 VOUT, step line transient 4/ 8/ VTLINEP, L, R 4, 5, 6 02 -600 +600 mV pk See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted wit
45、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc
46、 0.5V no external sync, CL= 0 unless otherwise specified Group A subgroups Device types Min Max Unit Input step 16V dc to/from 40V dc, IOUT= Max 4, 5, 6 01, 02 300 VOUT, step line transient recovery 4/ 7/ TTLINEP, L, R 4, 5, 6 02 800 s IOUT = Max 4, 5, 6 01, 02 50 Start-up overshoot 4/ VtonOSP, L, R
47、 4, 5, 6 02 120 mV pk IOUT = Max 4, 5, 6 01, 02 5 Start-up delay 9/ TonDP, L, R 4, 5, 6 02 20 ms IOUT = Max 4, 5, 6 01, 02 6 Load fault recovery 4/ TrLFP, L, R 4, 5, 6 02 20 ms 1/ Post irradiation testing shall be in accordance with 4.3.5 herein. 2/ These parts may be dose rate sensitive in a space
48、environment and may demonstrate enhanced low dose rate effects. Radiation end-point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rads(Si)/s. 3/ Capacitive load may be any value from 0 to the maximum limit without compromising DC performance. 4/ Parameter shall be tested as part of device characterization and after design and process changes. These parameters shall b
