1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make title and symbol changes to both tests specified under the UVLO section in table I. - ro 00-12-18 R. MONNIN B Made a change to the minimum ambient operating temperature in 1.4 and table I. Changes also made to the delay to output test and PS
2、RR test in table I. rp 01-03-21 R. MONNIN C Add footnote to the error amp section as specified in table I and add footnote to figure 2. - ro 01-07-10 R. MONNIN D Make changes to output voltage test, total output variation test, and input voltage test as specified in table I. Also, make change to foo
3、tnote 2/ as specified in table I and footnote 1/ as specified in figure 2. - ro 01-08-16 R. MONNIN E Add new footnote to figure 2 and to the Oscillator section as specified under table I. Make change to RTCT description as specified under figure 2. Make change to VINtest condition as specified under
4、 table I. - ro 03-09-19 R. MONNIN F Add a new footnote under paragraph1.5 and Table I. - ro 05-06-03 R. MONNIN G Add OSCGND and VCpin descriptions to figure 2. - ro 08-10-16 R. HEBER H Add block diagram. Add Table IB, paragraphs 2.2, 4.4.4.3, and 6.7. Make changes to footnote 3/ as specified under T
5、able I. Add new footnote to PWM section as specified under Table I. Delete note 3 from figure 2. Delete the last sentence from the RTCT pin description under figure 2. - ro 10-07-14 C. SAFFLE J Add device type 02. Delete radiation exposure circuit and dose rate induced latch up testing paragraph. -
6、ro 12-06-27 C. SAFFLE REV SHEET REV J J J J J J J J J J SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV J J J J J J J J J J J J J J OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil
7、STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, CURRENT MODE PULSE WIDTH MODULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-11-30 AMSC
8、N/A REVISION LEVEL J SIZE A CAGE CODE 67268 5962-01509 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E325-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01509 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE
9、VISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in th
10、e Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 01509 01 V P C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device cla
11、ss designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL
12、-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 IS-1845ASRH High speed, current mod
13、e pulse width modulator 02 IS-1845ASEH High speed, current mode pulse width modulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the re
14、quirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desig
15、nator Terminals Package style P CDIP2-T8 8 Dual-in-line X See figure 1 18 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted wit
16、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01509 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) +35 V dc Maximum storage temperature range . -65C to +150C Lead temperature (
17、soldering, 10 seconds) +265C Power dissipation (PD) 1.5 W Junction temperature (TJ) . +175C Thermal resistance, junction-to-case (JC): Case P . 25C/W Case X . 8C/W Thermal resistance, junction-to-ambient (JA): Case P . 100C/W Case X . 90C/W 1.4 Recommended operating conditions. Supply voltage (VCC)
18、+12 V dc to +20 V dc Ambient operating temperature range (TA) . -50C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 . 300 krads(Si) 2/ Device type 02 . 300 krads(Si) 3/ Maximum total dose available (dose rate 0.01 rads(Si)/s): Device typ
19、e 02 50 krads(Si) 3/ Single event phenomena (SEP) for device types 01 and 02: No SEU occurs at an effective linear energy transfer (LET) (see 4.4.4.2) 35 MeV / (mg/cm2) 4/ (Fluence = 1x106ions/cm2) Single event latchup (SEL) No latch up 5/ _ 1/ Stresses above the absolute maximum rating may cause pe
20、rmanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are g
21、uaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) . 3/ The device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to
22、 a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 4/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested. See manufacturers SEE test report for
23、more information. 5/ Device types 01 and 02 use dielectrically isolated (DI) technology and latch-up is verified to be not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01509 DLA LAND AND MARITIME
24、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the
25、issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Sta
26、ndard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document O
27、rder Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solic
28、itation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM Internation
29、al, P.O. Box C700, 100 Bar Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws a
30、nd regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The
31、 modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requireme
32、nts of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.
33、1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation
34、exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA
35、WING SIZE A 5962-01509 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation par
36、ameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking.
37、The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA produ
38、ct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device class
39、es Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufactur
40、er in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA
41、 Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Cer
42、tificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class
43、 M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent
44、, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by th
45、is drawing shall be in microcircuit group number 116 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01509 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHE
46、ET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -50C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Reference section. Output voltage VREFIOUT= 1 mA 1 01, 02 4.90 5.10 V M,D,P,L,R,F 1 4.90 5.10 Line regulat
47、ion VRLINE12 V VCC 25 V 1,2,3 01, 02 -20 20 mV M,D,P,L,R,F 1 -20 20 Load regulation VRLOAD1 mA IO 20 mA 1 01, 02 -25 25 mV 2,3 -60 60 M,D,P,L,R,F 1 -60 60 Total output variation VWCLine, Load, Temp 1,2,3 01, 02 4.82 5.18 V M,D,P,L,R,F 1 4.82 5.18 Output short circuit ISC1,2,3 01, 02 -100 -30 mA M,D,
48、P,L,R,F 1 -100 -30 Oscillator section. 2/ Initial accuracy IA TA= 25C 4 01, 02 47 57 kHz M,D,P,L,R,F 4 47 57 Voltage stability VS 12 V VCC 25 V 4,5,6 01, 02 -1 1 % M,D,P,L,R,F 4 -1 1 Discharge current IDISVRT/CT= 2 V 1,2,3 01, 02 7.5 14 mA M,D,P,L,R,F 1 7.5 14 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01509 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics
