1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make correction to pin assignments as specified in figure 2. - ro 02-02-13 R. MONNIN B Make correction to the descriptive designator as specified in 1.2.4. - ro 02-12-04 R. MONNIN C Add a new footnote under paragraph 1.5 and Table I. Delete parag
2、raphs 4.4.4.2, 4.4.4.3, and 4.4.4.4. - ro 05-06-21 R. MONNIN D Make correction to terminal number column as specified under figure 1. - ro 07-01-16 J. RODENBECK E Add device type 02. Add ASTM F1192 information under section 2, Table IB, and paragraph A.1.5. Delete radiation exposure circuit. - ro 12
3、-08-13 C. SAFFLE REV SHEET REV E E E E E E E SHEET 15 16 17 18 19 20 21 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUI
4、T DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD VOLTAGE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-12-21 AMSC N/A REVISION LEVEL
5、E SIZE A CAGE CODE 67268 5962-01510 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E298-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEE
6、T 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifyi
7、ng Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 01510 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case
8、outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendi
9、x A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 IS-139ASRH Single event radiation hardened quad voltag
10、e comparator 02 IS-139ASEH Single event radiation hardened quad voltage comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requi
11、rements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designat
12、or Terminals Package style X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA
13、RD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (+VCC) 33 V dc Input voltage range (VIN) -0.3 V dc to 33 V dc Input current (IIN) (VIN1 V, +VIN= 0 V, VOUT15
14、k, +VCC= 15 V 1,2,3 01,02 25 V/mV M,D,P,L,R,F 1 25 Response time 4/ tPHLVIN= VIO+ 5 mV, VREF= 1.4 V, VRL= 5 V, 4,6 01,02 4 s RL= 5.1 k, see figure 3 5 6 M,D,P,L,R,F 4 4 tPLHVIN= VIO+ 5 mV, VREF= 1.4 V, VRL= 5 V, 4,6 5 s RL= 5.1 k, see figure 3 5 7 M,D,P,L,R,F 4 5 1/ RHA device type 01 supplied to th
15、is drawing will meet all levels M, D, P, L, R and F of irradiation. However, device type 01 is only tested at the “F” level accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rat
16、e effects. RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A and M, D, P, and L for condition D. However, device type 02 is only tested at the “F” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” l
17、evel in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table IA. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ The comparator will provide a proper output s
18、tate even if the positive swing of the inputs exceeds the power supply voltage level, if the other input remains within the common mode voltage range. The low input voltage state must not be less than -0.3 V (or 0.3 V below the magnitude of the negative power supply, if used). 3/ The upper end of th
19、e common mode voltage range is (+VCC) - 2.5 V, but either or both inputs can go to +30 V without damage. 4/ If not tested, shall be guaranteed to the limits specified in table IA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC
20、IRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ 2/ Device types Bias for No single event burn-out (SEB) test; maximum operating voltage VCC= 30 V at effective LET = 3/ 4/ 5/ MeV/(mg/cm2) 01,
21、 02 LET 83 1/ For SEP test conditions, see 4.4.4.2 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved by TRB and qualifying activity. 3/ Tested for latch-up at worst case operating temperat
22、ure, TA= +125C 10C 4/ Tested to LET 83 MeV/(mg/cm2) and no latch-up occurs. 5/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested. See manufacturers SEE test report for more information. 4.
23、VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as d
24、escribed herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology c
25、onformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A,
26、 B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance
27、 with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING
28、 SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 9 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outline X Terminal number Terminal symbol 1 NC 2 OUTPUT B 3 NC 4 OUTPUT A 5 NC 6 NC 7 VCC8 -INPUT A 9 +INPUT A 10 -INPUT B 11 +INPUT B 12 -INPUT C 13 +INPUT C
29、 14 -INPUT D 15 +INPUT D 16 NC 17 GND 18 NC 19 OUTPUT D 20 OUTPUT C NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHI
30、O 43218-3990 REVISION LEVEL E SHEET 10 DSCC FORM 2234 APR 97 FIGURE 2. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHE
31、ET 11 DSCC FORM 2234 APR 97 FIGURE 3. Timing diagrams. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 12 DSCC FORM 2234 APR 97 TAB
32、LE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Subgroups (in accordance with MIL-PRF-38535, table III) Device class M Device class Q Device class V Interim electrical parameters (see 4.2) 1,4 1,4 1,4 Final electrical parameter
33、s (see 4.2) 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1/ 1,2,3, 1/ 2/ 4,5,6 Group A test requirements (see 4.4) 1,2,3,4,5,6 1,2,3,4,5,6 1,2,3,4,5,6 Group C end-point electrical parameters (see 4.4) 1,2,3,4,5,6 1,2,3,4,5,6 1,2,3, 2/ 4,5,6 Group D end-point electrical parameters (see 4.4) 1,4 1,4 1,4 Group E end-poi
34、nt electrical parameters (see 4.4) 1,4 1,4 1,4 1/ PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see table IA). TABLE IIB. Burn-in and life test delta parameters. (TA
35、= +25C). Parameters Symbol Min Max Units Input offset voltage VIO-2 +2 mV Input bias current IIB-100 +100 nA Input offset current IIO-100 +100 nA 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be
36、 as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiri
37、ng or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c
38、. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01510 DLA LAND AND MARIT
39、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 13 DSCC FORM 2234 APR 97 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535
40、and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspe
41、ction for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A i
42、nspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional crit
43、eria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The
44、 test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA= +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria f
45、or device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the
46、device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-S
47、TD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical pa
48、rameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at TA= +25C 5C, after exposure, to the subgroups
