1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. - drw 03-11-10 Raymond Monnin B Correction to table I, ICCPDtest, change unit from A to mA. - drw 08-12-22 Robert M. Heber REV SHET REV B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV B B B B B B B B B B B B
2、B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monni
3、n MICROCIRCUIT, LINEAR, DESERIALIZER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-10-07 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-01535 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E108-09 .Provided by IHSNot for ResaleNo reproduction or networking p
4、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (
5、device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as
6、shown in the following example: 5962 - 01535 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked device
7、s meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. Th
8、e device type identifies the circuit function as follows: Device type Generic number Circuit function 01 UT54LVDS218 50 MHz Deserializer 02 UT54LVDS218 75 MHz Deserializer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows
9、: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is
10、 as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flatpack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot f
11、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VDD) -0.3 V dc to 4.0
12、 V dc Voltage on any pin (VI/O) -0.3 V dc to (VDD+ 0.3 V dc) 2/ Storage temperature (TSTG) -65C to +150C Power dissipation (PD) . 1.25 W Junction temperature (TJ) 3/. +150C Thermal resistance, junction-to-case (JC) 4/ . 10C/W DC input current (II) 10 mA 1.4 Recommended operating conditions. Supply v
13、oltage (VDD) 3.0 V dc to 3.6 V dc Case temperature range (TC). -55C to +125C Input voltage (VIN) 0 V dc to VDD1.5 Radiation features. Maximum total dose available (dose rate = 1 rad(Si)/s) . 1Megarad(Si) Neutron irradiation 1 X 1013neutrons/cm25/ Single event latchup. 100 MeV cm2/mg 2. APPLICABLE DO
14、CUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF D
15、EFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - L
16、ist of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of
17、 precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the abso
18、lute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For cold spare mode (VDD= VSS), VI/Omay be 0.3 V to the maximum recommended operating VDD+ 0.3 V. 3/ Maximum junction temperature may be increased
19、 to +175C during burn-in and life test. 4/ Test per MIL-STD-883, method 1012. 5/ Guaranteed, but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO
20、 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The
21、 modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requireme
22、nts of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.
23、1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revi
24、sion level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are
25、 as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be mark
26、ed with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option,
27、the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a
28、“QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply
29、to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing
30、as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate
31、of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change o
32、f product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and app
33、licable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUM
34、BUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/, 2/ -55C TC+125C VDD= 3.3 V to 3.6 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max CMOS/TTL DC SPECIFICATIONS ( DWNPWR , RXOUT
35、) High-level input voltage VIH1, 2, 3 01, 02 2.0 VDDV Low-level input voltage VIL1, 2, 3 01, 02 GND 0.8 V Low-level output voltage VOLIOL= 2 mA 1, 2, 3 01, 02 0.3 V High-level output voltage VOHIOL= -0.4 mA 1, 2, 3 01, 02 2.7 V High-level input current IIHVIN= 3.6 V, VDD= 3.6 V 1, 2, 3 01, 02 -10 +1
36、0 A Low-level Input current IILVIN= 0 V, VDD= 3.6 V 1, 2, 3 01, 02 -10 +10 A Input clamp voltage VCLICL= -18 mA 1, 2, 3 01, 02 -1.5 V Cold spare leakage current ICSVIN= 3.6 V, VDD= VSS1, 2, 3 01, 02 -20 +20 A Output short circuit current IOSVOUT= 0 V 3/, 4/ 1, 2, 3 01, 02 -15 -130 mA LVDS RECEIVER S
37、PECIFICATIONS (IN+, IN-) Differential input high threshold VTHVCM=+1.2 V 4/ 1, 2, 3 01, 02 +100 mV Differential input low threshold VTLVCM=+1.2 V 4/ 1, 2, 3 01, 02 -100 mV Common mode voltage range VCMRVID= 210 mV 5/ 1, 2, 3 01, 02 0.2 2.0 V Input current IINVIN= 2.4 V, VDD= 3.6 V 1, 2, 3 01, 02 -10
38、 +10 A VIN= 0 V, VDD= 3.6 V -10 +10 Cold spare leakage current ICSINVIN= 3.6 V, VDD= VSS1, 2, 3 01, 02 -20 +20 A SUPPLY CURRENT Active supply current ICCCL= 8 pF, see figure 3 4/ 1, 2, 3 01, 02 105 mA Power down supply current ICCPDPWRDWN = Low, LVDS Inputs = Low Logic, VDD= 3.6 V 1, 2, 3 01, 02 2.0
39、 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electr
40、ical performance characteristics - continued. Test Symbol Conditions 1/, 2/ -55C TC+125C VDD= 3.0 V dc to 3.6 V dc Group A subgroups Device type Limits Unit unless otherwise specified Min Max RECEIVER SWITCHING CHARACTERISTICS 6/ CMOS/TTL low-to-high transition time CLHT See figure 4, 4/ 9, 10, 11 0
41、1 3.5 ns CMOS/TTL high-to-low transition time CHLT See figure 4, 4/ 9, 10, 11 01 3.5 ns Receiver input strobe position for bit 0 RSPos0 f = 50 MHz, 9, 10, 11 01 0.59 1.33 ns See figure 9, 4/ f = 75 MHz 02 0.50 1.24 Receiver input strobe position for bit 1 RSPos1 f = 50 MHz 9, 10, 11 01 3.45 4.19 ns
42、See figure 9, 4/ f = 75 MHz 02 2.41 3.15 Receiver input strobe position for bit 2 RSPos2 f = 50 MHz 9, 10, 11 01 6.30 7.04 ns See figure 9, 4/ f = 75 MHz 02 4.31 5.05 Receiver input strobe position for bit 3 RSPos3 f = 50 MHz 9, 10, 11 01 9.16 9.90 ns See figure 9, 4/ f = 75 MHz 02 6.22 6.96 Receive
43、r input strobe position for bit 4 RSPos4 f = 50 MHz 9, 10, 11 01 12.02 12.76 ns See figure 9, 4/ f = 75 MHz 02 8.12 8.86 Receiver input strobe position for bit 5 RSPos5 f = 50 MHz 9, 10, 11 01 14.88 15.62 ns See figure 9, 4/ f = 75 MHz 02 10.03 10.77 Receiver input strobe position for bit 6 RSPos6 f
44、 = 50 MHz 9, 10, 11 01 17.73 18.47 ns See figure 9, 4/ f = 75 MHz 02 11.93 12.67 RxCLK OUT period RCOP f = 50 MHz 9, 10, 11 01 20.00 66.7 ns See figure 5, 4/ f = 75 MHz 02 13.3 66.7 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr
45、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/, 2/ -55C TC+125C VDD= 3.0 V dc to 3.6 V dc Group A
46、 subgroups Device type Limits Unit unless otherwise specified Min Max RxCLK OUT high time RCOH f = 50 MHz, 9, 10, 11 01 3.6 ns See figure 5, 4/ f = 75 MHz 02 RxCLK OUT low time RCOL f = 50 MHz 9, 10, 11 01 3.6 ns See figure 5, 4/ f = 75 MHz 02 RxOUT setup to RxCLK OUT RSRC f = 50 MHz 9, 10, 11 01 3.
47、5 ns See figure 5, 7/ f = 75 MHz 02 RxOUT hold to RxCLK OUT RHRC f = 50 MHz 9, 10, 11 01 3.5 ns See figure 5, 7/ f = 75 MHz 02 RxCLK IN to RxCLK OUT delay RCCD f = 50 MHz 9, 10, 11 01 3.4 8.3 ns See figure 6, 8/ f = 75 MHz 02 Receiver phase lock loop set RPLLS See figure 7 5/ 9, 10,11 01, 02 10 ms R
48、eceiver powerdown delay RPDD See figure 8 9, 10,11 01, 02 2 s 1/ Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C (see 1.5 herein). 2/ Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except differential voltages. 3/ Output short current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time for a maximum durati
