1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add footnote to VTHand VTLtests as specified under table I. - ro 02-04-17 R. MONNIN B Drawing updated to reflect current requirements. - ro 02-10-29 R. MONNIN C Add radiation hardness assurance (RHA) level H as specified under 1.5. - ro 03-04-08
2、R. MONNIN D Make correction to VDDlimit as specified under 1.4. - ro 07-07-25 R. HEBER REV SHET REV D D D D D SHEET 15 16 17 18 19 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MIC
3、ROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-03-22 MICROCIRCUIT, DIGITAL-LINEAR, OCTAL 400 MBPS BUS LVDS
4、 REPEATER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-01536 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E557-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01536 DEFENSE SUPPLY
5、CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead fi
6、nishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 01536 01 Q Y X Federal stock class designator RHA designator (s
7、ee 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Devi
8、ce class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit funct
9、ion 01 UT54LVDM328 Octal 400 MBPS bus LVDS repeater 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 complia
10、nt, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Y Se
11、e figure 1 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE
12、 A 5962-01536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ DC supply voltage (VDD) . -0.3 V to 4.0 V Voltage on any pins (VIO) . -0.3 V to ( VDD+ 0.3 V ) 2/ DC input current (IIO) 10 mA Power dissipation (PD)
13、 800 mW Junction temperature (TJ) . +150C 3/ Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . 22C/W 1.4 Recommended operating conditions. Positive supply voltage (VDD) . 3.0 V to 3.6 V DC input voltage, receiver inputs (VIN) . 0 V to 2.4 V DC input voltage, logic
14、 inputs (VIN) . 0 V to VDDfor END or ENCK Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate 1 rads (Si) / s): RHA level H . 1 Mrads (Si) Neutron irradiation . 1 x 1013neutrons/cm24/ Single event latch up . 100 Mev cm2/ mg 2. APPL
15、ICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPART
16、MENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDB
17、K-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Phil
18、adelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For cold spare mode ( VDD= VSS), VIOmay be -0.3 V to the maximum recommended operating VDD+
19、0.3 V. 3/ Maximum junction temperature may be increased to +175C during burn-in and life test. 4/ Guaranteed, but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01536 DEFENSE SUPPLY CENTER COLUMB
20、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws a
21、nd regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan.
22、The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical
23、 dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Te
24、rminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and
25、 shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table
26、 I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN lis
27、ted in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator
28、shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as req
29、uired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements
30、 of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved sour
31、ce of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as r
32、equired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
33、herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required do
34、cumentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 77 (see MIL-PRF-38535, appendix A). Provided by IHSNot for Re
35、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/
36、2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DC specifications (EN) 3/ High level input voltage VIH1,2,3 01 2.0 VDDV Low level input voltage VIL1,2,3 01 GND 0.8 High level input current IIHVIN= 3.6 V, VDD= 3.6 V 1,2,3 01 -10 +10 A Low level input curr
37、ent IILVIN= 0 V, VDD= 3.6 V 1,2,3 01 -10 +10 A Input clamp voltage VCLICL= -18 mA 1,2,3 01 -1.5 V Cold spare leakage ICSVIN= 3.6 V, VDD= VSS1,2,3 01 -20 +20 A LVDS output DC specifications ( OUT+, OUT- ) Differential output voltage VODRL= 35 , see figure 4 1,2,3 01 250 450 mV Change in VODbetween co
38、mplimentary output states VODRL= 35 , see figure 4 1,2,3 01 35 mV Offset voltage VOSVOS= (VOH+VOL) / 2, RL= 35 1,2,3 01 1.055 1.550 V Change in VOSbetween complimentary output states VOSRL= 35 1,2,3 01 35 mV Output three-state 4/ current IOZThree-state output, VDD= 3.6 V, VOUT= VDDor GND 1,2,3 01 10
39、 A Cold sparing leakage current ICSOUTVOUT= 3.6 V, VDD= VSS1,2,3 01 -20 +20 A Output short circuit 5/ 6/ current IOSVOUT+ or VOUT= 0 V 1,2,3 01 -25 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI
40、T DRAWING SIZE A 5962-01536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Un
41、it Min Max LVDS receiver dc specifications ( IN+, IN- ) Differential input high 6/ threshold VTHVCM= +1.2 V 1,2,3 01 +100 mV Differential input low 6/ threshold VTLVCM= +1.2 V 1,2,3 01 -100 mV Common mode voltage range VCMRVID= 210 mV 1,2,3 01 0.2 2.00 V Input current IINVIN= 2.4 V, VDD= 3.6 V 1,2,3
42、 01 -10 +10 A VIN= 0 V, VDD= 3.6 V -10 +10 Cold sparing leakage current ICSINVIN= 3.6 V, VDD= VSS1,2,3 01 -20 +20 A Supply current section Total supply current ICCLEND, ENCK = VDD, RL= 35 , VDD= 3.6 V 1,2,3 01 220 mA Three-state supply current ICCZEND = ENCK = VSS, VDD= 3.6 V 1,2,3 01 20 mA AC switc
43、hing characteristics Disable time (active 6/ to three-state) high to Z tPHZRL= 35 , CL= 10 pF, see figure 5 9,10,11 01 4.5 ns Disable time (active 6/ to three-state) low to Z tPLZRL= 35 , CL= 10 pF, see figure 5 9,10,11 01 4.5 ns Enable time (three- 6/ state to active) Z to high tPZHRL= 35 , CL= 10
44、pF, see figure 5 9,10,11 01 11.0 ns Enable time (three- 6/ state to active) Z to low tPZLRL= 35 , CL= 10 pF, see figure 5 9,10,11 01 11.0 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING
45、SIZE A 5962-01536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max
46、 AC switching characteristics continued Output low-to-high 4/ transition time, 20 % to 80 % tLHTRL= 35 , CL= 10 pF, see figures 6 and 7 9,10,11 01 600 ps Output high-to-low 4/ transition time, 80 % to 20 % tHLTRL= 35 , CL= 10 pF, see figures 6 and 7 9,10,11 01 600 ps Propagation low to high delay tP
47、LHDRL= 35 , CL= 10 pF, see figures 6 and 8 9,10,11 01 3.5 ns Propagation high to low delay tPHLDRL= 35 , CL= 10 pF, See figures 6 and 8 9,10,11 01 3.5 ns Differential skew tPHLD tPLHDtSKEWSee figures 6 and 8 9,10,11 01 900 ps Output channel-to-channel skew tCCSSee figures 6 and 9 9,10,11 01 500 ps 1
48、/ Device type supplied to this drawing meets all levels M, D, P, L, R, F, G, H of irradiation. However, this device is only tested at the “H” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ Unless otherwise specified, VDD= 3.3 V 0.3 V. 3/ Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground. 4/ Guaranteed by desig
