1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to paragraphs 1.5 and 4.4.4.2. - ro 02-11-08 R. MOONIN REV SHET REV A A A A SHEET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY
2、 CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, QUAD, 2 X 2 400 MBPS CROSSPOINT SWITCH, MONOLITHIC AND AGENCIES OF THE D
3、EPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-10-11 SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-01537 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E089-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or ne
4、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high rel
5、iability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The
6、PIN is as shown in the following example: 5962 H 01537 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA mar
7、ked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Devic
8、e type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UT54LVDM228 Quad, radiation hardened 2 x 2 400 Mbps crosspoint switch 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance
9、 level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s).
10、 The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 64 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device clas
11、s M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ DC supply vo
12、ltage (VDD) -0.3 V to 4.0 V Voltage on any pins (VIO) . -0.3 V to (VDD+ 0.3 V) 2/ DC input current (IIO) 10 mA Power dissipation (PD) . 800 mW Junction temperature (TJ) . +150C 3/ Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) 22C/W 1.4 Recommended operating condit
13、ions. Positive supply voltage (VDD) . 3.3 V to 3.6 V DC input voltage, receiver inputs (VIN) . 0 V to 2.4 V DC input voltage, logic inputs (VIN) 0 V to VDDfor EN, SEL Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 100 Mev cm2/
14、 mg 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Departm
15、ent of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Micro
16、circuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For cold spare mode (VDD= VSS), VIOmay
17、 be 0.3 V to the maximum recommended operating VDD+ 0.3 V. 3/ Maximum junction temperature may be increased to +175C during burn-in and life test. 4/ Guaranteed, not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN
18、G SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the
19、 specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this d
20、rawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as sp
21、ecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-J
22、AN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case o
23、utline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Block diagram. The block diagram shall be as specified o
24、n figure 4. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post irradiation
25、 parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sha
26、ll be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire
27、 SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for d
28、evice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, append
29、ix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manu
30、facturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the r
31、equirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS CO
32、LUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DC specifications (EN) High level input voltage VIH1,2,3 01
33、2.0 VCCV Low level input voltage VIL1,2,3 01 GND 0.8 V High level input current IIHVIN= 3.6 V, VDD= 3.6 V 1,2,3 01 -10 +10 A Low level input current IILVIN= 0 V, VDD= 3.6 V 1,2,3 01 -10 +10 A Input clamp voltage VCLICL= -18 mA 1,2,3 01 -1.5 V Cold spare leakage ICSVIN= 3.6 V, VDD= VSS1,2,3 01 -20 +2
34、0 A LVDS output DC specifications (OUT+, OUT-) Differential output voltage VODRL= 35 , see figure 5 1,2,3 01 250 450 mV Change in VODbetween complimentary output states VODRL= 35 1,2,3 01 35 mV Offset voltage VOSVOS= (VOH+VOL) / 2, RL= 35 , see figure 5 1,2,3 01 1.055 1.550 V Change in VOSbetween co
35、mplimentary output states VOSRL= 35 1,2,3 01 35 mV Output three-state current IOZThree-state output, VDD= 3.6 V, VOUT= VDDor GND 1,2,3 01 10 A Cold sparing leakage current ICSOUTVOUT= 3.6 V, VDD= VSS1,2,3 01 -20 +20 A Output short circuit 3/ 4/ current IOSVOUT+or VOUT-= 0 V 1,2,3 01 -25 mA See footn
36、otes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performa
37、nce characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max LVDS receiver dc specifications (IN+, IN-) Differential input high 4/ threshold voltage VTHVCM= +1.2 V 1,2,3 01 +100 mV Differential input low 4/ Thr
38、eshold voltage VTLVCM= +1.2 V 1,2,3 01 -100 mV Common mode voltage range VCMRVID= 200 mV 1,2,3 01 0.2 2.00 V Input current IINVIN= 2.4 V, VDD= 3.6 V 1,2,3 01 -10 +10 A VIN= 0 V, VDD= 3.6 V -10 +10 Cold sparing leakage current ICSINVIN= 3.6 V, VDD= VSS1,2,3 01 -20 +20 A Supply current section Total s
39、upply current ICCDEN1 EN8, ENCK = VDD, RL= 35 1,2,3 01 220 mA Three-state supply current ICCZEN1 EN8, ENCK = VSS1,2,3 01 20 mA Functional test See 4.4.1c 7,8 01 AC switching characteristics Input to SEL setup 4/ 5/ time tSETSee figures 6 and 7 9,10,11 01 1.6 ns Input to SEL hold 4/ 5/ time tHOLDSee
40、figures 6 and 7 9,10,11 01 1.5 ns SEL to switch output 4/ tSWITCHSee figures 6 and 7 9,10,11 01 3.0 ns Disable time (active to 4/ Three-state) high to Z tPHZSee figure 8 and 9 9,10,11 01 4.5 ns Disable time (active to 4/ three-state) low to Z tPLZSee figure 8 and 9 9,10,11 01 4.5 ns See footnotes at
41、 end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance cha
42、racteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max AC switching characteristics continued Enable time (three- 4/ 6/ state to active) Z to high tPZHSee figure 8 and 9 9,10,11 01 11.0 ns Enable time (three- 4/
43、 6/ state to active) Z to low tPZLSee figure 8 and 9 9,10,11 01 11.0 ns Output low-to-high 7/ transition time, 20 % to 80 % tLHTSee figure 10 and 9 9,10,11 01 600 ps Output high-to-low 7/ transition time, 80 % to 20 % tHLTSee figure 10 and 9 9,10,11 01 600 ps Propagation low to high delay tPLHDRL= 3
44、5 , CL= 10 pF, see figure 9 and 11 9,10,11 01 3.5 ns Propagation high to low delay tPHLDRL= 35 , CL= 10 pF, see figure 9 and 11 9,10,11 01 3.5 ns Pulse skew tPHLD- tPLHDtSKEWSee figures 9 and 11 9,10,11 01 900 ps Output channel-to-channel skew tCCSSee figure 9 and 12 9,10,11 01 500 ps 1/ Device type
45、 supplied to this drawing meets all levels M, D, P, L, R, F, G, H of irradiation. However, this device is only tested at the “H” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA=
46、 +25C. 2/ Unless otherwise specified, VDD= 3.3 V 0.3 V. 3/ Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not exceed maximum junction temperature specification. 4/ Guaranteed by characterization
47、only. 5/ tSETand tHOLDtime specify that data must be in a stable state before and after SEL transition. 6/ Maximum tPZH and tPZL = 4.5 ns when En or ENCL = VDDon another channel. 7/ Guaranteed by design. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
48、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 Case outline X FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 Symbol Dimensions Note Inches Millimeters Min Max Min Max A .095 .115 2.41 2.92 b .007 .009 0.18 0.
