1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to footnote 5/ in 1.3. Added footnote 4/ to KVItest in table I. Made correction to figure 3. -rrp 03-02-19 R. MONNIN B Add 3.1.1 and die appendix A. -rrp 05-01-27 R. MONNIN C Add low dose rate radiation note to 1.5. Add a new paragraph und
2、er section 2. Revise footnote 3/ as specified under table I. Delete accelerated aging test paragraph 4.4.4.1.1. rrp 06-05-03 R. MONNIN D Make change to low dose rate radiation note in 1.5. Deleted non-Government publications paragraph in section 2. Revise footnote 3/ as specified under table I. -rrp
3、 06-11-28 R. MONNIN E Update drawing as part of 5 year review - jt 11-12-07 C. SAFFLE REV SHEET REV E E E E E SHEET 15 16 17 18 19 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 432
4、18-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, POSITIVE, FIXED, 2.5 V, LOW DROPOUT, VOLTAGE REGULATOR, M
5、ONOLITHIC SILICON DRAWING APPROVAL DATE Raymond Monnin AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-02534 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E080-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5
6、962-02534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outl
7、ines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02534 01 V X A Federal stock class designator R
8、HA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RH
9、A designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number
10、 Circuit function 01 RH-L4913-25 Radiation hardened, positive, fixed, 2.5 V, 2 A, low dropout voltage regulator 02 RH-L4913-25 Radiation hardened, positive, fixed, 2.5 V, 3 A, low dropout voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the
11、product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4
12、 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1/ Y CBCC1-N3 3 Bottom terminal chip carrier Z See figure 1 3 TO-257 single row flange mount with insulated case and ceramic seal
13、 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ AlN ceramic header with metallized bottom side and pullback of 0.01 x 0.02 inches. Provided by IHSNot for ResaleNo reproduction or networking permitted
14、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ DC input voltage 14 V Output current: Case X . 2 A Case Y 3 A Case Z . 3 A Power dissipation at
15、 TA= 25C: Case X . 1 W 3/ Case Y . 1.5 W 3/ Case Z . 2.5 W 3/ Power dissipation at TC= 25C: Cases X and Y . 15 W Case Z . 10 W Thermal resistance, junction-to-case (JC): Cases X and Y 8.3C/W Case Z . 12.5C/W Thermal resistance, junction-to-ambient (JA): Case X . 125C/W Case Y . 83C/W Case Z . 50C/W
16、Storage temperature range -65C to +150C Operating temperature range -55C to +150C Lead temperature (soldering, 10 seconds) +300C 4/ Maximum junction temperature (TJ) . +150C 5/ 1.4 Recommended operating conditions. Input voltage range (VIN) 4 V to 12 V Output voltage (VOUT) 2.5 V Ambient operating t
17、emperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device types 01 and 02 300 Krads(Si) Latch-up . 6/ The Radiation Hardness Assurance (RHA) devices specified on this drawing have been characterization tested for Enhanced Low D
18、ose Rate Sensitivity (ELDRS). The characterization has been performed at a Low Dose Rate (LDR) of approximately 40 mrads/s and a High Dose Rate (HDR) of 50-300 rad/s. The post-irradiation parametric values for LDR and HDR samples were within the parametric limits as specified in Table I. Characteriz
19、ation testing was performed to the Total Dose level as specified above 300 krad(Si). Therefore, the RHA devices on this drawing have been shown not to exceed specification limits at a dose rate of 40 mrads/s at 300 krad(Si). Future testing of the devices on this drawing may therefore be performed at
20、 HDR only. Changes to the RHA product listed in this drawing that may affect the RHA response will require analysis to determine whether further characterization for LDR sensitivity is required. The RHA part numbers specified herein that were previously tested at HDR will not be changed based on thi
21、s characterization testing. 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ At TA2.4 V, VIN= VOUT + 2 V, 1,2,3 01 1 mA Inhibit voltage VINHON VIN= VOUT+ 2.5 V, IOUT= 5
22、mA 1,2,3 01 0.8 V VINHOFF 2.4 Dropout voltage VdIOUT= 400 mA 1 01, 02 0.45 V 2 0.55 3 0.4 IOUT= 1 A 1 0.65 2 0.8 3 0.55 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02534 DLA
23、 LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply voltage rejection 5
24、/ SVR VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 120 Hz, TA= +25C 4 01, 02 60 dB VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 33 kHz, TA= +25C 30 Inhibit propagation delay tPLHVINHIBIT= 2.4 V, IOUT= 400 mA, VIN= VNOM+ 2.5 V, See figure 4 9 01, 02 20 s 5/ tPHL100 1/ Device types 01 and 02 have been characterized throu
25、gh all levels M, D, P, L, R, F of irradiation. However, this device is tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ VIN= VOUT+ 2.5 V, CIN= 1 F, CO
26、UT= 1 F. 3/ These parts have been characterization tested at Low Dose Rate, see 1.5. 4/ KVI= (Vrline) x 100/VOUT1where Vrline= VOUT1 VOUT1; VOUT1= VOUTwhen VIN= VNOM+ 2.5 V and IOUT= 5 mA, VOUT1= VOUTwhen VIN= VMAX= 12 V and IOUT= 5 mA 5/ Controlled via design or process and is not directly tested.
27、Characterized on initial design release and upon design or process changes which affect this parameter. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acqu
28、iring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full anbient operating
29、 temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers
30、 PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes
31、 Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for d
32、evice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device c
33、lass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing s
34、hall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
35、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Case Z Symbol Inches Millimeters Min Max Min Max A .185 .210 4.70 5.33 A1 .035 .045 0.89 1.14 A2 .115 .125 2.92 3.18 b .025 .035 0.64 0.89 D .650 .660 16.5
36、1 16.76 D1 .410 .420 10.41 10.67 E .410 .420 10.41 10.67 e .095 .105 2.41 2.67 H .202 .212 5.13 5.38 L .600 .650 15.24 16.51 L1 .527 .537 13.39 13.64 N - .028 - 0.71 P .140 .150 3.56 3.81 Note: The U.S. government preferred system of measurement is the metric SI system. However, since this item was
37、originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outlines Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
38、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 Device type 01 02 Case outlines X Y Z Terminal number Terminal symbol 1 VOUT1VOUTVIN2 VOUT1VINGND 3 VINGND VOUT4 VIN- - 5 VIN- - 6 VOUT2- - 7 VOUT2- - 8 IS
39、C - - 9 NC - - 10 OCM - - 11 NC - - 12 NC - - 13 GND - - 14 INH - - 15 NC - - 16 SENSE - - NC = No connect FIGURE 2. Terminal connections. FIGURE 3. Block diagram Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59
40、62-02534 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 9 DSCC FORM 2234 APR 97 FIGURE 4. Inhibit propagation delay waveform. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02534 DLA
41、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 10 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of micro
42、circuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and
43、review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the rev
44、iewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be
45、in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535,
46、 appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and s
47、hall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The te
